Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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SIDR626DP-T1-RE3N-CHANNEL 60-V (D-S) MOSFET |
2052 | 3.02 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 42.8A (Ta), 100A (Tc) | 6V, 10V | 1.7mOhm @ 20A, 10V | 3.4V @ 250µA | 102 nC @ 10 V | ±20V | 5130 pF @ 30 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NVMFS5C638NLWFT1GMOSFET N-CH 60V 26A/133A 5DFN |
2788 | 3.25 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 26A (Ta), 133A (Tc) | 4.5V, 10V | 3mOhm @ 50A, 10V | 2V @ 250µA | 40.7 nC @ 10 V | ±20V | 2880 pF @ 25 V | - | 4W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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HUF76429S3STMOSFET N-CH 60V 47A D2PAK |
3783 | 1.13 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 47A (Tc) | 4.5V, 10V | 22mOhm @ 47A, 10V | 3V @ 250µA | 46 nC @ 10 V | ±16V | 1480 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIR512DP-T1-RE3N-CHANNEL 100 V (D-S) MOSFET POW |
2552 | 2.23 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 25.1A (Ta), 100A (Tc) | 7.5V, 10V | 4.5mOhm @ 20A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 3400 pF @ 50 V | - | 6W (Ta), 96.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMFS5C442NLT1GMOSFET N-CH 40V 27A/130A 5DFN |
3411 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 27A (Ta), 130A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2V @ 250µA | 50 nC @ 10 V | ±20V | 3100 pF @ 25 V | - | 3.1W (Ta), 69W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SQJQ186ER-T1_GE3AUTOMOTIVE N-CHANNEL 80 V (D-S) |
3400 | 3.04 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 329A (Tc) | 10V | 2.3mOhm @ 20A, 10V | 3.5V @ 250µA | 185 nC @ 10 V | ±20V | 10552 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NP83P06PDG-E1-AYMOSFET P-CH 60V 83A TO263 |
2768 | 2.86 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 83A (Tc) | 4.5V, 10V | 8.8mOhm @ 41.5A, 10V | 2.5V @ 1mA | 190 nC @ 10 V | ±20V | 10100 pF @ 10 V | - | 1.8W (Ta), 150W (Tc) | 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NVMFS5C423NLAFT1GMOSFET N-CH 40V 31A/150A 5DFN |
3640 | 2.32 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 31A (Ta), 150A (Tc) | 4.5V, 10V | 2mOhm @ 50A, 10V | 2V @ 250µA | 50 nC @ 10 V | ±20V | 3100 pF @ 20 V | - | 3.7W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPAN60R280P7SXKSA1MOSFET N-CH 650V 12A TO220 |
3893 | 1.73 |
ДобавитьРасследования |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18 nC @ 10 V | ±20V | 761 pF @ 400 V | - | 24W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF730MOSFET N-CH 400V 5.5A TO220AB |
2548 | 1.14 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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PJF60R620E_T0_00001600V N-CHANNEL SUPER JUNCTION MO |
3058 | 1.73 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.2A (Ta), 7A (Tc) | 10V | 620mOhm @ 2.4A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±20V | 457 pF @ 25 V | - | 1.04W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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RJK2076DPA-00#J5AMOSFET N-CH 200V 20A WPAK |
3649 | 1.73 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 20A (Ta) | 10V | 85mOhm @ 10A, 10V | - | 19 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 65W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIDR680DP-T1-RE3N-CHANNEL 80-V (D-S) MOSFET |
3070 | 3.06 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 32.8A (Ta), 100A (Tc) | 7.5V, 10V | 2.9mOhm @ 20A, 10V | 3.4V @ 250µA | 105 nC @ 10 V | ±20V | 5150 pF @ 40 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BSC120N12LSGATMA1TRENCH >=100V PG-TDSON-8 |
2403 | 2.31 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 10A (Ta), 68A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 2.4V @ 72µA | 51 nC @ 10 V | ±20V | 4900 pF @ 60 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RS6P100BHTB1NCH 100V 100A, HSOP8, POWER MOSF |
2807 | 3.37 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 6V, 10V | 5.9mOhm @ 90A, 10V | 4V @ 1mA | 45 nC @ 10 V | ±20V | 2880 pF @ 50 V | - | 104W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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UPA2826T1S-E2-AT8P HWSON |
2822 | 1.74 |
ДобавитьРасследования |
Tray | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 27A (Ta) | 2.5V, 8V | 4.3mOhm @ 13.5A, 8V | 1.5V @ 1mA | 37 nC @ 4 V | ±12V | 3610 pF @ 10 V | - | 20W (Ta) | 150°C | Surface Mount |
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Таблицы данных |
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SIDR578EP-T1-RE3N-CHANNEL 150 V (D-S) 175C MOSFE |
3693 | 3.09 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 17.4A (Ta), 78A (Tc) | 7.5V, 10V | 8.8mOhm @ 20A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±20V | 2540 pF @ 75 V | - | 7.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFS7734PBFMOSFET N-CH 75V 183A D2PAK |
3997 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 183A (Tc) | - | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270 nC @ 10 V | ±20V | 10150 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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RM150N150HDMOSFET N-CH 150V 150A TO263-2 |
2906 | 1.75 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 150A (Tc) | 10V | 7.2mOhm @ 70A, 10V | 4V @ 250µA | - | ±20V | 5500 pF @ 75 V | - | 320W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IQE050N08NM5ATMA1TRENCH 40<-<100V PG-TSON-8 |
2540 | 3.19 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 16A (Ta), 101A (Tc) | 6V, 10V | 5mOhm @ 20A, 10V | 3.8V @ 49µA | 43.2 nC @ 10 V | ±20V | 2900 pF @ 40 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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