Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RM11N800T2MOSFET N-CH 800V 11A TO220-3 |
3471 | 1.44 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 420mOhm @ 5.5A, 10V | 4V @ 250µA | - | ±30V | 2600 pF @ 50 V | - | 188W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RM11N800TIMOSFET N-CHANNEL 800V 11A TO220F |
2342 | 1.44 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tj) | 10V | 420mOhm @ 5.5A, 10V | 4V @ 250µA | - | ±30V | 2600 pF @ 50 V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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PMZB370UNE,315-NEXEFFECT TRANSISTOR, 0.9A I(D), 30 |
3294 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 900mA (Ta) | 1.8V, 4.5V | 490mOhm @ 500mA, 4.5V | 1.05V @ 250µA | 1.16 nC @ 15 V | ±8V | 78 pF @ 25 V | - | 360mW (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFS4410PBF-INFHEXFET POWER MOSFET |
3444 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 88A (Tc) | - | 10mOhm @ 58A, 10V | 4V @ 150µA | 180 nC @ 10 V | ±20V | 5150 pF @ 50 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFR1018EPBF-INFHEXFET POWER MOSFET |
3341 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 56A (Tc) | - | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69 nC @ 10 V | ±20V | 2290 pF @ 50 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR18N15DTRLP-INFHEXFET SMPS POWER MOSFET |
2370 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 18A (Tc) | - | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43 nC @ 10 V | - | 900 pF @ 25 V | - | - | - | Surface Mount |
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BUK6215-75C,118-NEXMOSFET N-CH 75V 57A DPAK |
3826 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 57A (Ta) | - | 15mOhm @ 15A, 10V | 2.8V @ 1mA | 61.8 nC @ 10 V | ±16V | 3900 pF @ 25 V | - | 128W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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BUK7E3R1-40E,127-NXPPFET, 100A I(D), 40V, 0.0031OHM |
2022 | 0.00 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 3.1mOhm @ 25A, 10V | 4V @ 1mA | 79 nC @ 10 V | ±20V | 6200 pF @ 25 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | |
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Таблицы данных |
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IQE006NE2LM5ATMA1MOSFET N-CH 25V 41A/298A 8TSON |
3177 | 2.92 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™5 | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 41A (Ta), 298A (Tc) | 4.5V, 10V | 650mOhm @ 20A, 10V | 2V @ 250µA | 82.1 nC @ 10 V | ±16V | 5453 pF @ 12 V | - | 2.1W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IQE006NE2LM5CGATMA1MOSFET N-CH 25V 41A/298A IPAK |
2632 | 2.92 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 41A (Ta), 298A (Tc) | - | 650mOhm @ 20A, 10V | 2V @ 250µA | 82.1 nC @ 10 V | ±16V | 5453 pF @ 12 V | - | 2.1W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF5805TRPBF-INFIRF5805 - TRANSISTOR |
3096 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.8A (Ta) | 4.5V, 10V | 98mOhm @ 3.8A, 10V | 2.5V @ 250µA | 17 nC @ 10 V | ±20V | 511 pF @ 25 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR6215TRRPBF-IRMOSFET P-CH 150V 13A DPAK |
3581 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | - | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BUK6213-30C,118-NEXPFET, 47A I(D), 30V, 0.029OHM, 1 |
2618 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 47A (Tc) | 10V | 14mOhm @ 10A, 10V | 2.8V @ 1mA | 19.5 nC @ 10 V | ±16V | 1108 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SQJQ148ER-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) |
2346 | 2.85 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 372A (Tc) | 10V | 1.5mOhm @ 20A, 10V | 3.5V @ 250µA | 102 nC @ 10 V | ±20V | 5750 pF @ 25 V | - | 394W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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BUK6C2R1-55C,118-NXPFET, 228A I(D), 55V, 0.0037OHM |
3876 | 0.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 228A (Tc) | 10V | 2.3mOhm @ 90A, 10V | 2.8V @ 1mA | 253 nC @ 10 V | ±16V | 16000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | |
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PMN40UPE,115-NEXTRANSISTOR |
2341 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.7A (Ta) | 1.8V, 4.5V | 43mOhm @ 3A, 4.5V | 950mV @ 250µA | 23 nC @ 4.5 V | ±8V | 1820 pF @ 10 V | - | 500mW (Ta), 8.33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF840BPBF-BE3MOSFET N-CH 500V 8.7A TO220AB |
2080 | 1.47 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 8.7A (Tc) | - | 850mOhm @ 4A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 527 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDD3670MOSFET N-CH 100V 34A TO252 |
3375 | 2.93 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 34A (Ta) | 6V, 10V | 32mOhm @ 7.3A, 10V | 4V @ 250µA | 80 nC @ 10 V | ±20V | 2490 pF @ 50 V | - | 3.8W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIDR220DP-T1-RE3N-CHANNEL 25-V (D-S) MOSFET |
2637 | 2.90 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 87.7A (Ta), 100A (Tc) | 4.5V, 10V | 5.8mOhm @ 20A, 10V | 2.1V @ 250µA | 200 nC @ 10 V | +16V, -12V | 10850 pF @ 10 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RJK0328DPB-01#J0MOSFET N-CH 30V 60A LFPAK |
3058 | 1.49 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Ta) | 4.5V, 10V | 2.1mOhm @ 30A, 10V | 2.5V @ 1mA | 42 nC @ 4.5 V | ±20V | 6380 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | Surface Mount |
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