Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PSMN070-200P,127-NXP PSMN070-200P,127-NXP

PSMN070-200P,127-NXP

POWER FIELD-EFFECT TRANSISTOR, 3

NXP USA Inc.

2267 1.00
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Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 35A (Tc) 10V 70mOhm @ 17A, 10V 4V @ 1mA 77 nC @ 10 V ±20V 4570 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK6212-40C,118-NEX

Таблицы данных

BUK6212-40C,118-NEX

BUK6212-40C,118-NEX

MOSFET N-CH 40V 50A DPAK

Nexperia USA Inc.

3679 1.00
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Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta) - 11.2mOhm @ 12A, 10V 2.8V @ 1mA 33.9 nC @ 10 V ±16V 1900 pF @ 25 V - 80W -55°C ~ 175°C (TJ) Surface Mount
BUK7E5R2-100E,127-NXP BUK7E5R2-100E,127-NXP

BUK7E5R2-100E,127-NXP

PFET, 120A I(D), 100V, 0.0052OHM

NXP USA Inc.

3594 1.00
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Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5.2mOhm @ 25A, 10V 4V @ 1mA 180 nC @ 10 V ±20V 11810 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHK12NQ03LT,518-NEX PHK12NQ03LT,518-NEX

PHK12NQ03LT,518-NEX

POWER FIELD-EFFECT TRANSISTOR, 1

Nexperia USA Inc.

2933 1.00
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Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 11.8A (Tj) 4.5V, 10V 10.5mOhm @ 12A, 10V 2V @ 250µA 17.6 nC @ 5 V ±20V 1335 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK6218-40C,118-NEX BUK6218-40C,118-NEX

BUK6218-40C,118-NEX

PFET, 42A I(D), 40V, 0.028OHM, 1

Nexperia USA Inc.

3882 1.00
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Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 16mOhm @ 10A, 10V 2.8V @ 1mA 22 nC @ 10 V ±16V 1170 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3709STRLPBF-INF

Таблицы данных

IRF3709STRLPBF-INF

IRF3709STRLPBF-INF

HEXFET SMPS POWER MOSFET

Infineon Technologies

2612 1.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR3802TRPBF-INF

Таблицы данных

IRLR3802TRPBF-INF

IRLR3802TRPBF-INF

IRLR3802 - HEXFET POWER MOSFET

Infineon Technologies

3412 1.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) 2.8V, 4.5V 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ009NE2LS5ATMA1

Таблицы данных

BSZ009NE2LS5ATMA1

BSZ009NE2LS5ATMA1

MOSFET N-CH 25V 39A/40A TSDSON

Infineon Technologies

3226 2.92
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 25 V 39A (Ta), 40A (Tc) 4.5V, 10V 900mOhm @ 20A, 10V 2V @ 250µA 124 nC @ 10 V ±16V 5500 pF @ 12 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN070-200B,118-NEX PSMN070-200B,118-NEX

PSMN070-200B,118-NEX

MOSFET N-CH 200V 35A D2PAK

Nexperia USA Inc.

3893 1.00
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Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 35A (Ta) - 70mOhm @ 17A, 10V 4V @ 1mA 77 nC @ 10 V ±20V 4570 pF @ 25 V - 250W (Ta) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4310Z-IR

Таблицы данных

AUIRFS4310Z-IR

AUIRFS4310Z-IR

MOSFET N-CH 100V 120A D2PAK

International Rectifier

3786 1.00
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Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) - 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7509-55A,127-NEX BUK7509-55A,127-NEX

BUK7509-55A,127-NEX

PFET, 75A I(D), 55V, 0.009OHM, 1

Nexperia USA Inc.

3250 1.00
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Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 25A, 10V 4V @ 1mA 62 nC @ 0 V ±20V 3271 pF @ 25 V - 211W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIDR140DP-T1-RE3

Таблицы данных

SIDR140DP-T1-RE3

SIDR140DP-T1-RE3

N-CHANNEL 25-V (D-S) MOSFET

Vishay Siliconix

2894 2.82
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 25 V 79A (Ta), 100A (Tc) 4.5V, 10V 0.67mOhm @ 20A, 10V 2.1V @ 250µA 170 nC @ 10 V +20V, -16V 8150 pF @ 10 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN27UP,115-NXP

Таблицы данных

PMN27UP,115-NXP

PMN27UP,115-NXP

MOSFET P-CH 20V 5.7A 6TSOP

NXP USA Inc.

2720 1.00
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Bulk TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 5.7A (Ta) - 32mOhm @ 2.4A, 4.5V 950mV @ 250µA 31 nC @ 4.5 V ±8V 2340 pF @ 10 V - 540mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS33N15DTRLP-IR

Таблицы данных

IRFS33N15DTRLP-IR

IRFS33N15DTRLP-IR

MOSFET N-CH 150V 33A TO263-3-2

International Rectifier

2917 1.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) - 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3710STRRPBF-IR

Таблицы данных

IRF3710STRRPBF-IR

IRF3710STRRPBF-IR

MOSFET N-CH 100V 57A D2PAK

International Rectifier

2425 1.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) - 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL2203NPBF-INF IRL2203NPBF-INF

IRL2203NPBF-INF

HEXFET POWER MOSFET

Infineon Technologies

3374 1.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 1V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK663R2-40C,118-NEX BUK663R2-40C,118-NEX

BUK663R2-40C,118-NEX

PFET, 100A I(D), 40V, 0.0057OHM

Nexperia USA Inc.

3597 0.00
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Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 3.2mOhm @ 25A, 10V 2.8V @ 1mA 125 nC @ 10 V ±16V 8020 pF @ 25 V - 204W (Tc) -55°C ~ 175°C (TJ)
STD2002T4-ON STD2002T4-ON

STD2002T4-ON

NFET DPAK SPCL 60V TR

onsemi

3862 1.00
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Bulk * Active - - - - - - - - - - - - - -
BUK625R0-40C,118-NXP BUK625R0-40C,118-NXP

BUK625R0-40C,118-NXP

MOSFET N-CH 40V 90A DPAK

NXP USA Inc.

2518 1.00
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Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Ta) - 5mOhm @ 25A, 10V 2.8V @ 1mA 88 nC @ 10 V ±16V 5200 pF @ 25 V - 158W (Ta) -55°C ~ 175°C (TJ) Surface Mount
RM110N150HD RM110N150HD

RM110N150HD

MOSFET N-CH 150V 113A TO263-2

Rectron USA

3005 1.44
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 150 V 113A (Tc) 10V 8.8mOhm @ 20A, 10V 4V @ 250µA - ±20V 4362 pF @ 75 V - 273W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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