Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RJK0856DPB-00#J5

Таблицы данных

RJK0856DPB-00#J5

RJK0856DPB-00#J5

MOSFET N-CH 80V 35A LFPAK

Renesas Electronics America Inc

3380 1.49
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 35A (Ta) 10V 8.9mOhm @ 17.5A, 10V - 40 nC @ 10 V ±20V 3000 pF @ 10 V - 65W (Tc) 150°C (TJ) Surface Mount
PJP7NA60_T0_00001 PJP7NA60_T0_00001

PJP7NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.

3727 1.49
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Ta) 10V 1.2Ohm @ 3.5A, 10V 4V @ 250µA 15.2 nC @ 10 V ±30V 723 pF @ 25 V - 145W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISC0806NLSATMA1

Таблицы данных

ISC0806NLSATMA1

ISC0806NLSATMA1

MOSFET N-CH 100V 16A/97A TDSON

Infineon Technologies

2496 3.03
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Ta), 97A (Tc) 4.5V, 10V 5.4mOhm @ 50A, 10V 2.3V @ 61µA 49 nC @ 10 V ±20V 3400 pF @ 50 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5C628NLWFAFT1G

Таблицы данных

NVMFS5C628NLWFAFT1G

NVMFS5C628NLWFAFT1G

MOSFET N-CH 60V 28A/150A 5DFN

onsemi

3298 1.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 150A (Tc) 4.5V, 10V 2.4mOhm @ 50A, 10V 2V @ 135µA 52 nC @ 10 V ±20V 3600 pF @ 25 V - 3.7W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM140N150T2 RM140N150T2

RM140N150T2

MOSFET N-CH 150V 140A TO220-3

Rectron USA

3002 1.51
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 140A (Tc) 10V 6.2mOhm @ 70A, 10V 4V @ 250µA - ±20V 5900 pF @ 75 V - 320W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM180N100T2 RM180N100T2

RM180N100T2

MOSFET N-CH 100V 180A TO220-3

Rectron USA

3117 1.51
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 3mOhm @ 100A, 10V 4.5V @ 250µA - ±20V 1150 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
R8002CND3FRATL

Таблицы данных

R8002CND3FRATL

R8002CND3FRATL

MOSFET N-CH 800V 2A TO252

Rohm Semiconductor

2500 2.97
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 4.3Ohm @ 1A, 10V 5.5V @ 1mA 12.1 nC @ 10 V ±30V 240 pF @ 25 V - 69W (Tc) 150°C (TJ) Surface Mount
IRFR014PBF-BE3

Таблицы данных

IRFR014PBF-BE3

IRFR014PBF-BE3

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix

3476 1.53
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) - 200mOhm @ 4.6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM17N800TI RM17N800TI

RM17N800TI

MOSFET N-CHANNEL 800V 17A TO220F

Rectron USA

2580 1.53
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 320mOhm @ 8.5A, 10V 4V @ 250µA - ±30V 2060 pF @ 50 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM17N800T2 RM17N800T2

RM17N800T2

MOSFET N-CH 800V 17A TO220-3

Rectron USA

3549 1.53
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Ta) 10V 320mOhm @ 8.5A, 10V 4V @ 250µA - ±30V 2060 pF @ 50 V - 260W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM17N800HD RM17N800HD

RM17N800HD

MOSFET N-CH 800V 17A TO263-2

Rectron USA

2004 1.53
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Ta) 10V 320mOhm @ 8.5A, 10V 4V @ 250µA - ±30V 2060 pF @ 50 V - 260W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5C645NLWFAFT1G

Таблицы данных

NVMFS5C645NLWFAFT1G

NVMFS5C645NLWFAFT1G

MOSFET N-CH 60V 22A 5DFN

onsemi

3373 3.12
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 22A (Ta) 4.5V, 10V 4mOhm @ 50A, 10V 2V @ 250µA 34 nC @ 10 V ±20V 2200 pF @ 50 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
SIDR5802EP-T1-RE3

Таблицы данных

SIDR5802EP-T1-RE3

SIDR5802EP-T1-RE3

N-CHANNEL 80 V (D-S) 175C MOSFET

Vishay Siliconix

2851 3.01
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 80 V 34.2A (Ta), 153A (Tc) 7.5V, 10V 2.9mOhm @ 20A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 3020 pF @ 40 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC037N08NS5TATMA1

Таблицы данных

BSC037N08NS5TATMA1

BSC037N08NS5TATMA1

MOSFET N-CH 80V 22A/100A TDSON

Infineon Technologies

2138 3.13
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 22A (Ta), 100A (Tc) 6V, 10V 3.7mOhm @ 50A, 10V 3.8V @ 72µA 58 nC @ 10 V ±20V 4200 pF @ 40 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR010PBF-BE3

Таблицы данных

IRFR010PBF-BE3

IRFR010PBF-BE3

MOSFET N-CH 50V 8.2A DPAK

Vishay Siliconix

2137 1.54
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 8.2A (Tc) - 200mOhm @ 4.6A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 250 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMFS6H836NT1G

Таблицы данных

NTMFS6H836NT1G

NTMFS6H836NT1G

MOSFET N-CH 80V 15A/74A 5DFN

onsemi

2269 1.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 80 V 15A (Ta), 74A (Tc) 6V, 10V 6.7mOhm @ 15A, 10V 4V @ 95µA 25 nC @ 10 V ±20V 1640 pF @ 40 V - 3.7W (Ta), 89W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB17P10TM

Таблицы данных

FQB17P10TM

FQB17P10TM

MOSFET P-CH 100V 16.5A D2PAK

Fairchild Semiconductor

2936 0.00
- +

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Расследования

Bulk QFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 16.5A (Tc) 10V 190mOhm @ 8.25A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.75W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP80N04S2-H4

Таблицы данных

IPP80N04S2-H4

IPP80N04S2-H4

N-CHANNEL POWER MOSFET

Infineon Technologies

3871 0.00
- +

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Расследования

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW90R1K0C3

Таблицы данных

IPW90R1K0C3

IPW90R1K0C3

N-CHANNEL POWER MOSFET

Infineon Technologies

2550 0.00
- +

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Расследования

Bulk * Active - - - - - - - - - - - - - -
IRF223

Таблицы данных

IRF223

IRF223

N-CHANNEL POWER MOSFET

Harris Corporation

3136 0.00
- +

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Расследования

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Tc) 10V 1.2Ohm @ 2.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
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