Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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FDMC8884-FSMOSFET N-CH 30V 9A/15A 8MLP |
3962 | 1.00 |
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 15A (Tc) | - | 19mOhm @ 9A, 10V | 2.5V @ 250µA | 14 nC @ 10 V | ±20V | 685 pF @ 15 V | - | 2.3W (Ta), 18W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRLR3410PBF-INFHEXFET POWER MOSFET |
3461 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±16V | 800 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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PSMN130-200D,118-NEXPOWER FIELD-EFFECT TRANSISTOR, 2 |
3417 | 1.00 |
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Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 20A (Tc) | 10V | 130mOhm @ 25A, 10V | 4V @ 1mA | 65 nC @ 10 V | ±20V | 2470 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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RJK0653DPB-00#J5MOSFET N-CH 60V 45A LFPAK |
2703 | 1.42 |
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Ta) | 4.5V, 10V | 4.8mOhm @ 22.5A, 10V | 2.5V @ 1mA | 42 nC @ 4.5 V | ±20V | 6100 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | Surface Mount |
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BUK9E08-55B,127-NXPPFET, 75A I(D), 55V, 0.0093OHM |
3264 | 0.00 |
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Tube | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 5V, 10V | 7mOhm @ 25A, 10V | 2V @ 1mA | 45 nC @ 5 V | ±15V | 5280 pF @ 25 V | - | 203W (Tc) | -55°C ~ 175°C (TJ) | |
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IRLR2908TRLPBF-INFIRLR2908 - HEXFET POWER MOSFET |
2211 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 30A (Tc) | 4.5V, 10V | 28mOhm @ 23A, 10V | 2.5V @ 250µA | 33 nC @ 4.5 V | ±16V | 1890 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IRLR8103VPBF-IRMOSFET N-CH 30V 91A DPAK |
3261 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 91A (Tc) | - | 9mOhm @ 15A, 10V | 3V @ 250µA | 27 nC @ 5 V | ±20V | 2672 pF @ 16 V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPD50N04S308ATMA1-INFOPTLMOS N-CHANNEL POWER MOSFET |
3673 | 1.00 |
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Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 7.5mOhm @ 50A, 10V | 4V @ 40µA | 35 nC @ 10 V | ±20V | 2350 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IRFHM8342TRPBF-IRMOSFET N-CH 30V 10A/28A 8PQFN DL |
2581 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta), 28A (Tc) | - | 16mOhm @ 17A, 10V | 2.35V @ 25µA | 10 nC @ 10 V | ±20V | 560 pF @ 25 V | - | 2.6W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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PSMN085-150K,518-NEXPOWER FIELD-EFFECT TRANSISTOR, 3 |
3888 | 1.00 |
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Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 3.5A (Tc) | 10V | 85mOhm @ 3.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±20V | 1310 pF @ 25 V | - | 3.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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AUIRF6218S-IRPFET, 27A I(D), 150V, 0.15OHM, 1 |
3696 | 1.00 |
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Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF1310NSPBF-INFHEXFET POWER MOSFET |
2817 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 10V | 36mOhm @ 22A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 3.8W (Ta), 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IRF2804SPBF-IRHEXFET POWER MOSFET |
2997 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDB8880-ON11A, 30V, 0.0145OHM, N-CHANNEL |
2533 | 0.00 |
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Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 54A (Tc) | 4.5V, 10V | 11.6mOhm @ 40A, 10V | 2.5V @ 250µA | 29 nC @ 10 V | ±20V | 1240 pF @ 15 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | |
![]() Таблицы данных |
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IRL8113PBF-IRHEXFET POWER MOSFET |
3674 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 105A (Tc) | 4.5V, 10V | 6mOhm @ 21A, 10V | 2.25V @ 250µA | 35 nC @ 4.5 V | ±20V | 2840 pF @ 15 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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BUK6211-75C,118-NEXMOSFET N-CH 75V 74A DPAK |
2772 | 1.00 |
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Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 74A (Ta) | - | 11mOhm @ 25A, 10V | 2.8V @ 1mA | 81 nC @ 10 V | ±16V | 5251 pF @ 25 V | - | 158W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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PH3120L,115-NXPPOWER FIELD-EFFECT TRANSISTOR, 1 |
2837 | 1.00 |
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Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 100A (Tc) | 4.5V, 10V | 2.65mOhm @ 25A, 10V | 2V @ 1mA | 48.5 nC @ 4.5 V | ±20V | 4457 pF @ 10 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IRFI1010NPBF-IRHEXFET POWER MOSFET |
3868 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 12mOhm @ 26A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 58W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AUIRFS3004-7P-IRPFET, 240A I(D), 40V, 0.00125OHM |
2831 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1.25mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9130 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IRLR8721TRPBF-IRHEXFET POWER MOSFET |
2552 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |