Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFS59N10DPBF IRFS59N10DPBF

IRFS59N10DPBF

SMPS HEXFET POWER MOSFET

International Rectifier

2545 1.00
- +

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU6215PBF

Таблицы данных

IRFU6215PBF

IRFU6215PBF

AUTOMOTIVE HEXFET P-CHANNEL

International Rectifier

2698 1.00
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Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9Y7R0-60ELX

Таблицы данных

BUK9Y7R0-60ELX

BUK9Y7R0-60ELX

SINGLE N-CHANNEL 60 V, 4.5 MOHM

Nexperia USA Inc.

3855 2.60
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 125A (Ta) 4.5V, 10V 4.5mOhm @ 25A, 10V 2.1V @ 1mA 152 nC @ 10 V ±10V 8327 pF @ 25 V - 238.4W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRF7805TRPBF

Таблицы данных

IRF7805TRPBF

IRF7805TRPBF

PFET, 30V, 0.011OHM, 1OXIDE SEMI

International Rectifier

3182 1.00
- +

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Расследования

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NP180N04TUG-E1-AY

Таблицы данных

NP180N04TUG-E1-AY

NP180N04TUG-E1-AY

180A, 40V, N-CHANNEL MOSFET

Renesas Electronics America Inc

2345 1.00
- +

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Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 1.5mOhm @ 90A, 10V 4V @ 250µA 390 nC @ 10 V ±20V 25700 pF @ 25 V - 1.8W (Ta), 288W (Tc) 175°C (TJ) Surface Mount
AUIRFR1010ZTRL

Таблицы данных

AUIRFR1010ZTRL

AUIRFR1010ZTRL

AUTOMOTIVE N CHANNEL

International Rectifier

2177 1.00
- +

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V - 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STD2002T4 STD2002T4

STD2002T4

NFET DPAK SPCL 60V TR

Motorola

3852 1.00
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Bulk * Active - - - - - - - - - - - - - -
IRFS31N20DTRLP

Таблицы данных

IRFS31N20DTRLP

IRFS31N20DTRLP

HEXFET N-CHANNEL POWER MOSFET

International Rectifier

2730 1.00
- +

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS31N20DPBF IRFS31N20DPBF

IRFS31N20DPBF

HEXFET N-CHANNEL POWER MOSFET

International Rectifier

2091 1.00
- +

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Расследования

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 82mOhm @ 18A, 10V 5.5V @ 250µA 107 nC @ 10 V ±30V 2370 pF @ 25 V - 3.1W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6621TRPBF

Таблицы данных

IRF6621TRPBF

IRF6621TRPBF

30V SINGLE N-CHANNEL HEXFET

International Rectifier

2268 1.00
- +

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 55A (Tc) 4.5V, 10V 9.1mOhm @ 12A, 10V 2.25V @ 250µA 17.5 nC @ 4.5 V ±20V 1460 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF640NSTRRPBF

Таблицы данных

IRF640NSTRRPBF

IRF640NSTRRPBF

IRF640 - HEXFET POWER MOSFET

International Rectifier

3067 1.00
- +

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Расследования

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7739L2TRPBF

Таблицы данных

IRF7739L2TRPBF

IRF7739L2TRPBF

DIRECTFET POWER MOSFET

International Rectifier

2528 0.00
- +

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Расследования

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 375A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 11880 pF @ 25 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7834PBF

Таблицы данных

IRF7834PBF

IRF7834PBF

MOSFET N-CH 30V 19A 8SO

International Rectifier

3442 1.00
- +

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Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta) - 4.5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3710 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD60R380E6BTMA1 IPD60R380E6BTMA1

IPD60R380E6BTMA1

COOLMOS N-CHANNEL POWER MOSFET

International Rectifier

3624 1.00
- +

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Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V Super Junction 83W (Tc) -55°C ~ 155°C (TJ) Surface Mount
IPA60R299CP

Таблицы данных

IPA60R299CP

IPA60R299CP

600V COOLMOS POWER TRANSISTOR

Infineon Technologies

3794 1.00
- +

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Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLR2905PBF

Таблицы данных

IRLR2905PBF

IRLR2905PBF

HEXFET POWER MOSFET

International Rectifier

2097 1.00
- +

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB59N10DPBF

Таблицы данных

IRFB59N10DPBF

IRFB59N10DPBF

SMPS HEXFET POWER MOSFET

International Rectifier

3106 1.00
- +

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Расследования

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 25mOhm @ 35.4A, 10V 5.5V @ 250µA 114 nC @ 10 V ±30V 2450 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR15N20DPBF IRFR15N20DPBF

IRFR15N20DPBF

HEXFET SMPS POWER MOSFET

International Rectifier

3237 1.00
- +

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 10V 165mOhm @ 10A, 10V 5.5V @ 250µA 41 nC @ 10 V ±30V 910 pF @ 25 V - 3W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1010ZS

Таблицы данных

AUIRF1010ZS

AUIRF1010ZS

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier

2869 1.00
- +

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Расследования

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUC120N06S5N017ATMA1

Таблицы данных

IAUC120N06S5N017ATMA1

IAUC120N06S5N017ATMA1

MOSFET N-CH 60V 120A TDSON-8-43

Infineon Technologies

2632 2.63
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tj) - 1.7mOhm @ 60A, 10V 3.4V @ 94µA 95.9 nC @ 10 V ±20V 6952 pF @ 30 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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