Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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HUF75333S3MOSFET N-CH 55V 66A D2PAK |
2684 | 1.00 |
ДобавитьРасследования |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 66A (Tc) | - | 16mOhm @ 66A, 10V | 4V @ 250µA | 85 nC @ 20 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF8113PBFHEXFET POWER MOSFET |
2217 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 17.2A (Ta) | 4.5V, 10V | 5.6mOhm @ 17.2A, 10V | 2.2V @ 250µA | 36 nC @ 4.5 V | ±20V | 2910 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RJK0456DPB-00#J5MOSFET N-CH 40V 50A LFPAK |
3032 | 1.34 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Ta) | 10V | 3.2mOhm @ 25A, 10V | - | 39 nC @ 10 V | ±20V | 3000 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RJK0656DPB-00#J5MOSFET N-CH 60V 40A LFPAK |
2511 | 1.34 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Ta) | 10V | 5.6mOhm @ 20A, 10V | - | 40 nC @ 10 V | ±20V | 3000 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RJK1056DPB-00#J5MOSFET N-CH 100V 25A LFPAK |
3458 | 1.34 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 25A (Ta) | 10V | 14mOhm @ 12.5A, 10V | - | 41 nC @ 10 V | ±20V | 3000 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF8721PBFMOSFET N-CH 30V 14A 8SO |
3758 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | - | 8.5mOhm @ 14A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1040 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIDR402EP-T1-RE3N-CHANNEL 40 V (D-S) 175C MOSFET |
2417 | 2.63 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 65.2A (Ta), 291A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 2.3V @ 250µA | 165 nC @ 10 V | +20V, -16V | 9100 pF @ 20 V | - | 7.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIDR610DP-T1-RE3N-CHANNEL 200-V (D-S) MOSFET |
2810 | 2.63 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 8.9A (Ta), 39.6A (Tc) | 7.5V, 10V | 31.9mOhm @ 10A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 1380 pF @ 100 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF6725MTRPBFDIRECTFET POWER MOSFET |
2799 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Ta), 170A (Tc) | 4.5V, 10V | 2.2mOhm @ 28A, 10V | 2.35V @ 100µA | 54 nC @ 4.5 V | ±20V | 4700 pF @ 15 V | - | 2.8W (Ta), 100W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TP2520N8-GMOSFET P-CH 200V 260MA TO243AA |
3564 | 1.77 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 260mA (Tj) | 4.5V, 10V | 12Ohm @ 200mA, 10V | 2.4V @ 1mA | - | ±20V | 125 pF @ 25 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLU9343PBFMOSFET P-CH 55V 20A IPAK |
3422 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | - | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47 nC @ 10 V | ±20V | 660 pF @ 50 V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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RS1E350BNTB1NCH 30V 80A POWER MOSFET: RS1E35 |
2419 | 3.13 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Ta), 80A (Tc) | 4.5V, 10V | 1.7mOhm @ 35A, 10V | 2.5V @ 1mA | 185 nC @ 10 V | ±20V | 7900 pF @ 15 V | - | 3W (Ta), 35W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLS4030-7PPBFIRLS4030 - HEXFET POWER MOSFET |
3830 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190A (Tc) | 4.5V, 10V | 3.9mOhm @ 110A, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | ±16V | 11490 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFZ44NSPBFHEXFET POWER MOSFET |
3891 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 17.5mOhm @ 25A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1470 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHA12N60E-GE3N-CHANNEL 600V |
3965 | 2.65 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 380mOhm @ 6A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±30V | 937 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STD1065T4NFET DPAK SPECIAL |
2152 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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NTA4015NT1GMOSFET N-CH 20V 238MA SC75 |
2865 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 238mA (Tj) | - | 3Ohm @ 10mA, 4.5V | 1.5V @ 100µA | - | ±10V | 20 pF @ 5 V | - | 300mW (Tj) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFL024NPBFHEXFET POWER MOSFET |
3870 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 2.8A (Ta) | 10V | 75mOhm @ 2.8A, 10V | 4V @ 250µA | 18.3 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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PJF60R980E_T0_00001600V N-CHANNEL SUPER JUNCTION MO |
2754 | 1.35 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 980mOhm @ 1.5A, 10V | 4V @ 250µA | 14.4 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF7832PBFHEXFET POWER MOSFET |
2162 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.32V @ 250µA | 51 nC @ 4.5 V | ±20V | 4310 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | Surface Mount |
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