Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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RJK0331DPB-01#J0POWER FIELD-EFFECT TRANSISTOR |
3935 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Ta) | - | 3.4mOhm @ 20A, 10V | - | 22 nC @ 4.5 V | - | 3380 pF @ 10 V | - | 50W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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MCB130N10YA-TPN-CHANNEL MOSFET, D2-PAK |
3038 | 2.04 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 130A (Tc) | 10V | 4.6mOhm @ 20A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 4600 pF @ 50 V | - | 260W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRLR3110ZTRLMOSFET N-CH 100V 42A DPAK |
3384 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | - | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48 nC @ 4.5 V | ±16V | 3980 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF3717TRPBFPFET, 20A I(D), 20V, 0.0044OHM |
3807 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 20A (Ta) | 4.5V, 10V | 4.4mOhm @ 20A, 10V | 2.45V @ 250µA | 33 nC @ 4.5 V | ±20V | 2890 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | |
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Таблицы данных |
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IRF530NSPBFHEXFET POWER MOSFET |
2882 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Tc) | 10V | 90mOhm @ 9A, 10V | 4V @ 250µA | 37 nC @ 10 V | ±20V | 920 pF @ 25 V | - | 3.8W (Ta), 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS9431A-F085MOSFET P-CH 20V 3.5A 8SOIC |
2992 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101 | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.5A (Ta) | - | 130mOhm @ 3.5A, 4.5V | 1V @ 250µA | 8.5 nC @ 4.5 V | ±8V | 405 pF @ 10 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF630NSPBFHEXFET POWER MOSFET |
2310 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.3A (Tc) | 10V | 300mOhm @ 5.4A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 575 pF @ 25 V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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RJK0332DPB-01#J0SILICON N CHANNEL POWER SWITCHI |
2577 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Ta) | 4.5V, 10V | 4.7mOhm @ 17.5A, 10V | 2.5V @ 1mA | 14 nC @ 4.5 V | ±20V | 2180 pF @ 10 V | - | 45W (Tc) | 150°C (TJ) | Surface Mount |
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RM50N200HDMOSFET N-CH 200V 51A TO263-2 |
3952 | 1.22 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 51A (Tc) | 10V | 32mOhm @ 10A, 10V | 4V @ 250µA | - | ±20V | 1598 pF @ 100 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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RM50N200T2MOSFET N-CH 200V 51A TO220-3 |
2032 | 1.22 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 51A (Tc) | 10V | 32mOhm @ 10A, 10V | 4V @ 250µA | - | ±20V | 1598 pF @ 100 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF3007PBFHEXFET AUTOMOTIVE POWER MOSFET |
2303 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 10V | 12.6mOhm @ 48A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3270 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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STD12N60DM6MOSFET N-CH 600V 10A DPAK |
3418 | 2.27 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10A (Tc) | - | 390mOhm @ 5A, 10V | 4.75V @ 250µA | 17 nC @ 10 V | ±25V | 508 pF @ 100 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHD14N60ET5-GE3N-CHANNEL 600V |
2182 | 2.40 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±30V | 1205 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFR2607ZTRLAUTOMOTIVE POWER MOSFET |
2655 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 42A (Tc) | 10V | 22mOhm @ 30A, 10V | 4V @ 50µA | 51 nC @ 10 V | ±20V | 1440 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHD14N60ET4-GE3N-CHANNEL 600V |
2728 | 2.40 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 309mOhm @ 7A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±30V | 1205 pF @ 100 V | - | 147W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFS4410ZTRLAUTOMOTIVE HEXFET N CHANNEL |
3675 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 97A (Tc) | - | 9mOhm @ 58A, 10V | 4V @ 150µA | 120 nC @ 10 V | - | 4820 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK6212-40C,118MOSFET N-CH 40V 50A DPAK |
2193 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Ta) | - | 11.2mOhm @ 12A, 10V | 2.8V @ 1mA | 33.9 nC @ 10 V | ±16V | 1900 pF @ 25 V | - | 80W | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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RJK0655DPB-00#J5MOSFET N-CH 60V 35A LFPAK |
3940 | 1.24 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 35A (Ta) | 10V | 6.7mOhm @ 17.5A, 10V | - | 35 nC @ 10 V | ±20V | 2550 pF @ 10 V | - | 60W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RJK0855DPB-00#J5MOSFET N-CH 80V 30A LFPAK |
2500 | 1.24 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 30A (Ta) | 10V | 11mOhm @ 15A, 10V | - | 35 nC @ 10 V | ±20V | 2550 pF @ 10 V | - | 60W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLS3034-7PPBFHEXFET POWER MOSFET |
3122 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 4.5V, 10V | 1.4mOhm @ 200A, 10V | 2.5V @ 250µA | 180 nC @ 4.5 V | ±20V | 10990 pF @ 40 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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