Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
|
IRFS4410ZPBFMOSFET N-CH 100V 97A TO263-3-2 |
3178 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 97A (Tc) | - | 9mOhm @ 58A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4820 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRF6655TRPBF100V 19A DIRECTFET-MV |
3037 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 4.8V @ 25µA | 11.7 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRF730N-CHANNEL, MOSFET |
3653 | 1.00 |
ДобавитьРасследования |
Bulk | PowerMESH™ II | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 5.5A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 24 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 100W (Tc) | 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
SIR570DP-T1-RE3N-CHANNEL 150 V (D-S) MOSFET POW |
3152 | 2.59 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 19A (Ta), 77.4A (Tc) | 7.5V, 10V | 7.9mOhm @ 20A, 10V | 4V @ 250µA | 71 nC @ 10 V | ±20V | 3740 pF @ 75 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRF710PFET, 2A I(D), 400V, 3.6OHM, 1-E |
2800 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 3.6Ohm @ 1.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
| |
|
IRF7241PBFHEXFET POWER MOSFET |
2546 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 6.2A (Ta) | 4.5V, 10V | 41mOhm @ 6.2A, 10V | 3V @ 250µA | 80 nC @ 10 V | ±20V | 3220 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRLL014NPBFMOSFET N-CH 55V 2A SOT223 |
2331 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 2A (Ta) | - | 140mOhm @ 2A, 10V | 2V @ 250µA | 14 nC @ 10 V | ±16V | 230 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
|
IRLR2908TRLPBFIRLR2908 - HEXFET POWER MOSFET |
2017 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 30A (Tc) | 4.5V, 10V | 28mOhm @ 23A, 10V | 2.5V @ 250µA | 33 nC @ 4.5 V | ±16V | 1890 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
PMV100XPEA,215MOSFET P-CH 20V 2.4A TO236AB |
3093 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.4A (Ta) | - | 128mOhm @ 2.4A, 4.5V | 1.25V @ 250µA | 6 nC @ 4.5 V | ±12V | 386 pF @ 10 V | - | 463mW (Ta), 4.45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
|
IRLR7807ZTRPBFIRLR7807 - HEXFET POWER MOSFET |
3415 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 43A (Tc) | 4.5V, 10V | 13.8mOhm @ 15A, 10V | 2.25V @ 250µA | 11 nC @ 4.5 V | ±20V | 780 pF @ 15 V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
| |
|
IRF7406PBFAUTOMOTIVE HEXFET P-CHANNEL POWE |
3793 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 5.8A (Ta) | 4.5V, 10V | 45mOhm @ 2.8A, 10V | 1V @ 250µA | 59 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRLR3705ZPBFHEXFET POWER MOSFET |
2719 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4.5V, 10V | 8mOhm @ 42A, 10V | 3V @ 250µA | 66 nC @ 5 V | ±16V | 2900 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRF7473PBFHEXFET POWER MOSFET |
2218 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6.9A (Ta) | 10V | 26mOhm @ 4.1A, 10V | 5.5V @ 250µA | 61 nC @ 10 V | ±20V | 3180 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRFIZ48NPBFHEXFET POWER MOSFET |
2934 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 40A (Tc) | 10V | 16mOhm @ 22A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 54W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
|
FDMS3572MOSFET N-CH 80V 8.8A/22A 8MLP |
2013 | 2.90 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 8.8A (Ta), 22A (Tc) | 6V, 10V | 16.5mOhm @ 8.8A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±20V | 2490 pF @ 40 V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRFP044NPBFHEXFET POWER MOSFET |
3265 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 53A (Tc) | 10V | 20mOhm @ 29A, 10V | 4V @ 250µA | 61 nC @ 10 V | ±20V | 1500 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
| |
|
RM21N700T2MOSFET N-CH 700V 21A TO220-3 |
2287 | 1.33 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 21A (Tc) | 10V | 190mOhm @ 10.5A, 10V | 3.5V @ 250µA | - | ±30V | 1950 pF @ 50 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
| |
|
RM21N700TIMOSFET N-CHANNEL 700V 21A TO220F |
3638 | 1.33 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 21A (Tc) | 10V | 190mOhm @ 10.5A, 10V | 3.5V @ 250µA | - | ±30V | 1950 pF @ 50 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
IRFS4115PBFHEXFET POWER MOSFET |
3330 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 195A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5270 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IPB80P04P407ATMA2MOSFET_(20V 40V) PG-TO263-3 |
3735 | 2.70 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 7.4mOhm @ 80A, 10V | 4V @ 150µA | 89 nC @ 10 V | ±20V | 6085 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
Запрос котировок
