Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
|
AUIRF1324S-7PMOSFET N-CH 24V 240A TO263-7 |
3788 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 24 V | 240A (Tc) | - | 1mOhm @ 160A, 10V | 4V @ 250µA | 252 nC @ 10 V | ±20V | 7700 pF @ 19 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
AUIRF3710ZMOSFET N-CH 100V 59A TO220AB |
3574 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 59A (Tc) | - | 18mOhm @ 35A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
|
IPD80N04S3-06OPTLMOS N-CHANNEL POWER MOSFET |
2506 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
IRFR1018EPBFMOSFET N-CH 60V 56A DPAK |
3808 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 56A (Tc) | - | 8.4mOhm @ 47A, 10V | 4V @ 100µA | 69 nC @ 10 V | ±20V | 2290 pF @ 50 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
| |
|
RM42N200DFMOSFET N-CHANNEL 200V 42A 8DFN |
3520 | 1.24 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 42A (Tc) | 10V | 32mOhm @ 10A, 10V | 4V @ 250µA | - | ±20V | 1598 pF @ 100 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
AUIRFR2307ZAUTOMOTIVE HEXFET N CHANNEL |
2178 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 42A (Tc) | 10V | 16mOhm @ 32A, 10V | 4V @ 100µA | 75 nC @ 10 V | ±20V | 2190 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IPI60R190C6COOLMOS N-CHANNEL POWER MOSFET |
2330 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
AUIRFR2407TRLAUTOMOTIVE POWER MOSFET |
3116 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 42A (Tc) | - | 26mOhm @ 25A, 10V | 4V @ 250µA | 110 nC @ 10 V | - | 2400 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SQD40061EL-T4_GE3P-CHANNEL 40-V (D-S) 175C MOSFET |
2590 | 2.45 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 4.5V, 10V | 5.1mOhm @ 30A, 10V | 2.5V @ 250µA | 280 nC @ 10 V | ±20V | 14500 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
| |
|
AUIRFS30067PMOSFET N-CH 60V 240A D2PAK |
3604 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | - | 2.1mOhm @ 168A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 8850 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
| |
|
RM21N650TIMOSFET N-CHANNEL 650V 21A TO220F |
2246 | 1.25 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 180mOhm @ 10.5A, 10V | 4V @ 250µA | - | ±30V | 2600 pF @ 50 V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
| |
|
RM21N650T2MOSFET N-CH 650V 21A TO220-3 |
2422 | 1.25 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 21A (Tc) | 10V | 180mOhm @ 10.5A, 10V | 4V @ 250µA | - | ±30V | 2600 pF @ 50 V | - | 188W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
IRLU2905ZPBFPOWER FIELD-EFFECT TRANSISTOR, 4 |
3369 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4.5V, 10V | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35 nC @ 5 V | ±16V | 1570 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
|
IRFHM8334TRPBFMOSFET N-CH 30V 13A/43A 8PQFN DL |
3580 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 43A (Tc) | - | 9mOhm @ 20A, 10V | 2.35V @ 25µA | 15 nC @ 10 V | ±20V | 1180 pF @ 10 V | - | 2.7W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
|
IRFL4310PBFMOSFET N-CH 100V 1.6A SOT223 |
3792 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.6A (Ta) | - | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRFR3410PBFMOSFET N-CH 100V 31A DPAK |
2221 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 31A (Tc) | - | 39mOhm @ 18A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 3W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
| |
|
FCPF11N60T11A, 600V, 0.38OHM, N-CHANNEL |
3728 | 0.00 |
ДобавитьРасследования |
Bulk | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 380mOhm @ 5.5A, 10V | 5V @ 250µA | 52 nC @ 10 V | ±30V | 1490 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | |
|
Таблицы данных |
|
AUIRFS3006-7TRLAUTOMOTIVE HEXFET N CHANNEL |
3977 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | - | 2.1mOhm @ 168A, 10V | 4V @ 250µA | 300 nC @ 10 V | - | 8850 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
AUIRFS3207ZMOSFET N-CH 75V 120A D2PAK |
2703 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | - | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6920 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
SPA20N60C3MOSFET N-CH 600V 20.7A TO220-111 |
3584 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.7A (Tc) | - | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 114 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 34.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
Запрос котировок
