Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRFS7530-7PPBFMOSFET N-CH 60V 240A D2PAK |
2555 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | - | 1.4mOhm @ 100A, 10V | 3.7V @ 250µA | 354 nC @ 10 V | ±20V | 12960 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SI7148DP-T1-E3MOSFET N-CH 75V 28A PPAK SO-8 |
2877 | 2.56 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 28A (Tc) | 4.5V, 10V | 11mOhm @ 15A, 10V | 2.5V @ 250µA | 100 nC @ 10 V | ±20V | 2900 pF @ 35 V | - | 5.4W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SI7846DP-T1-E3MOSFET N-CH 150V 4A PPAK SO-8 |
2720 | 2.56 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 4A (Ta) | 10V | 50mOhm @ 5A, 10V | 4.5V @ 250µA | 36 nC @ 10 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF7469PBFMOSFET |
2969 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 9A (Ta) | 4.5V, 10V | 17mOhm @ 9A, 10V | 3V @ 250µA | 23 nC @ 4.5 V | ±20V | 2000 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLR7807ZPBFHEXFET POWER MOSFET |
2685 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 43A (Tc) | 4.5V, 10V | 13.8mOhm @ 15A, 10V | 2.25V @ 250µA | 11 nC @ 4.5 V | ±20V | 780 pF @ 15 V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFB61N15DPBFMOSFET N-CH 150V 60A TO220AB |
2517 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 60A (Tc) | - | 32mOhm @ 36A, 10V | 5.5V @ 250µA | 140 nC @ 10 V | ±30V | 3470 pF @ 25 V | - | 2.4W (Ta), 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFB4115GPBFHEXFET N-CHANNEL POWER MOSFET |
2530 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 104A (Tc) | 10V | 11mOhm @ 62A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5270 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRLU3103PBFMOSFET N-CH 30V 55A IPAK |
3098 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 55A (Tc) | - | 19mOhm @ 33A, 10V | 1V @ 250µA | 50 nC @ 4.5 V | ±16V | 1600 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFI7440GPBFIRFI7440 - HEXFET POWER MOSFET |
3902 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 95A (Tc) | 10V | 2.5mOhm @ 57A, 10V | 3.9V @ 100µA | 132 nC @ 10 V | ±20V | 4549 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BSZ0500NSIATMA1MOSFET N-CH 30V 30A/40A TSDSON |
2216 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Ta), 40A (Tc) | 4.5V, 10V | 1.5mOhm @ 20A, 10V | 2V @ 250µA | 52 nC @ 10 V | ±20V | 3400 pF @ 15 V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NVTFS4C02NWFTAGMOSFET - SINGLE N-CHANNEL POWER |
3375 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28.3A (Ta), 162A (Tc) | 4.5V, 10V | 2.25mOhm @ 20A, 10V | 2.2V @ 250µA | 45 nC @ 10 V | ±20V | 2980 pF @ 15 V | - | 3.2W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | |
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AUIRF7484QTRAUTOMOTIVE N CHANNEL |
2227 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta) | 7V | 10mOhm @ 14A, 7V | 2V @ 250µA | 100 nC @ 7 V | ±8V | 3520 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TK6R8A08QM,S4XUMOS10 TO-220SIS 80V 6.8MOHM |
3155 | 1.31 |
ДобавитьРасследования |
Tube | U-MOSX-H | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 58A (Tc) | 6V, 10V | 6.8mOhm @ 29A, 10V | 3.5V @ 500µA | 39 nC @ 10 V | ±20V | 2700 pF @ 40 V | - | 41W (Tc) | 175°C | Through Hole |
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IRLL3303TRPBFHEXFET POWER MOSFET |
3009 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.6A (Ta) | 4.5V, 10V | 31mOhm @ 4.6A, 10V | 1V @ 250µA | 50 nC @ 10 V | ±16V | 840 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRFS3006PBFHEXFET N-CHANNEL POWER MOSFET |
2366 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 8970 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF8734PBFHEXFET POWER MOSFET |
2800 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta) | 4.5V, 10V | 3.5mOhm @ 21A, 10V | 2.35V @ 50µA | 30 nC @ 4.5 V | ±20V | 3175 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB50R199CPMOSFET N-CH 500V 17A TO263-3-2 |
2903 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 17A (Tc) | - | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45 nC @ 10 V | ±20V | 1800 pF @ 100 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFF131MOSFET N-CH 80V 8A TO205AF |
2113 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 8A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole |
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PJP3NA80_T0_00001800V N-CHANNEL MOSFET |
3858 | 1.31 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 3A (Ta) | 10V | 4.8Ohm @ 1.5A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±30V | 406 pF @ 25 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRFS4010MOSFET N-CH 100V 180A TO263 |
2950 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | - | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215 nC @ 10 V | ±20V | 9575 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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