Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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PJP8NA65A_T0_00001650V N-CHANNEL MOSFET |
2617 | 1.10 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.5A (Ta) | 10V | 1.2Ohm @ 3.75A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±30V | 1245 pF @ 25 V | - | 145W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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BSZ021N04LS6ATMA1MOSFET N-CH 40V 25A/40A TSDSON |
3565 | 2.25 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ 6 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 25A (Ta), 40A (Tc) | 4.5V, 10V | 2.1mOhm @ 20A, 10V | 2.3V @ 250µA | 31 nC @ 10 V | ±20V | 2700 pF @ 20 V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRLR3110ZMOSFET N-CH 100V 42A DPAK |
3971 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | - | 14mOhm @ 38A, 10V | 2.5V @ 100µA | 48 nC @ 4.5 V | ±16V | 3980 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMC8010MOSFET N-CH 30V 30A/75A POWER33 |
3822 | 2.41 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Ta), 75A (Tc) | 4.5V, 10V | 1.3mOhm @ 30A, 10V | 2.5V @ 1mA | 94 nC @ 10 V | ±20V | 5860 pF @ 15 V | - | 2.4W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHP4N80E-BE3N-CHANNEL 600V |
3162 | 2.17 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 622 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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JDX6002NFET T0220FP JPN |
3898 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF1324STRL-7PPMOSFET N-CH 24V 240A D2PAK |
2002 | 1.00 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 24 V | 240A (Tc) | - | 1mOhm @ 160A, 10V | 4V @ 250µA | 252 nC @ 10 V | ±20V | 7700 pF @ 19 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRLR2905TRLAUTOMOTIVE HEXFET N-CHANNEL |
2318 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48 nC @ 5 V | ±16V | 1700 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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R6511KND3TL1HIGH-SPEED SWITCHING, NCH 650V 1 |
3582 | 2.40 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 400mOhm @ 3.8A, 10V | 5V @ 320µA | 22 nC @ 10 V | ±20V | 760 pF @ 25 V | - | 124W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS8558S38A, 25V, 0.0015OHM, N-CHANNEL |
2958 | 0.00 |
ДобавитьРасследования |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 33A (Ta), 90A (Tc) | 4.5V, 10V | 1.5mOhm @ 33A, 10V | 2.2V @ 1mA | 81 nC @ 10 V | ±12V | 5118 pF @ 13 V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | |
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FDMS9408L-F085MOSFET N-CH 40V 80A 8PQFN |
2045 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | - | 1.7mOhm @ 80A, 10V | 3V @ 250µA | 110 nC @ 10 V | ±20V | 5750 pF @ 20 V | - | 214W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
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IPLK80R600P7ATMA1MOSFET 800V TDSON-8 |
3348 | 2.16 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ P7 | Active | - | MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | - | - | - | - | - | Surface Mount |
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Таблицы данных |
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BUK9Y8R8-60ELXSINGLE N-CHANNEL 60 V, 5.6 MOHM |
2606 | 2.27 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Ta) | 4.5V, 10V | 5.6mOhm @ 25A, 10V | 2.1V @ 1mA | 123 nC @ 10 V | ±10V | 6695 pF @ 25 V | - | 194W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDC6392S2.2A, 20V, P-CHANNEL, MOSFET |
2987 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.2A (Ta) | 2.5V, 4.5V | 150mOhm @ 2.2A, 4.5V | 1.5V @ 250µA | 5.2 nC @ 4.5 V | ±12V | 369 pF @ 10 V | Schottky Diode (Isolated) | 960mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS8560S35A, 25V, 0.0018OHM, N-CHANNEL |
3116 | 0.00 |
ДобавитьРасследования |
Bulk | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Ta), 70A (Tc) | 4.5V, 10V | 1.8mOhm @ 30A, 10V | 2.2V @ 1mA | 68 nC @ 10 V | ±12V | 4350 pF @ 13 V | - | 2.5W (Ta), 65W (Tc) | -55°C ~ 150°C (TJ) | |
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Таблицы данных |
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IRF614BFP001MOSFET N-CH 250V 2.8A TO220F-3 |
2618 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.8A (Tc) | - | 2Ohm @ 1.4A, 10V | 4V @ 250µA | 10.5 nC @ 10 V | ±30V | 275 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SPU03N60C3POWER FIELD-EFFECT TRANSISTOR, 3 |
3744 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF3710ZLPBFHEXFET POWER MOSFET |
2867 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRLU2905AUTOMOTIVE HEXFET N-CHANNEL |
3101 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48 nC @ 5 V | ±16V | 1700 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF3709ZSTRRPBFMOSFET N-CH 30V 87A D2PAK |
2906 | 1.90 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 87A (Tc) | 4.5V, 10V | 6.3mOhm @ 21A, 10V | 2.25V @ 250µA | 26 nC @ 4.5 V | ±20V | 2130 pF @ 15 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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