Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RM20N650HD RM20N650HD

RM20N650HD

MOSFET N-CH 650V 20A TO263-2

Rectron USA

3096 1.04
- +

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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 210mOhm @ 10A, 10V 5V @ 250µA - ±30V 2600 pF @ 50 V - 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFS5C442NWFAFT1G

Таблицы данных

NVMFS5C442NWFAFT1G

NVMFS5C442NWFAFT1G

MOSFET N-CH 40V 29A/140A 5DFN

onsemi

3043 2.12
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 29A (Ta), 140A (Tc) 10V 2.3mOhm @ 50A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 2100 pF @ 25 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK752R3-40E,127

Таблицы данных

BUK752R3-40E,127

BUK752R3-40E,127

MOSFET N-CH 40V 120A TO220AB

NXP USA Inc.

3928 1.00
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Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Ta) - 2.3mOhm @ 25A, 10V 4V @ 1mA 109.2 nC @ 10 V ±20V 8500 pF @ 25 V - 293W (Ta) -55°C ~ 175°C (TJ) Through Hole
RF1S70N06

Таблицы данных

RF1S70N06

RF1S70N06

MOSFET N-CH 60V 70A I2PAK

Harris Corporation

2510 1.00
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Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) - 14mOhm @ 70A, 10V 4V @ 250µA 215 nC @ 20 V ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD850N10LD

Таблицы данных

FDD850N10LD

FDD850N10LD

MOSFET N-CH 100V 15.3A TO252-4

Fairchild Semiconductor

2767 1.00
- +

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 15.3A (Tc) - 75mOhm @ 12A, 10V 2.5V @ 250µA 28.9 nC @ 10 V ±20V 1465 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
XPH2R106NC,L1XHQ

Таблицы данных

XPH2R106NC,L1XHQ

XPH2R106NC,L1XHQ

MOSFET N-CH 60V 110A 8SOP

Toshiba Semiconductor and Storage

2303 2.27
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Ta) - 2.1mOhm @ 55A, 10V 2.5V @ 1mA 104 nC @ 10 V ±20V 6900 pF @ 10 V - 960mW (Ta), 170W (Tc) 175°C Surface Mount
AUIRLS4030-7P

Таблицы данных

AUIRLS4030-7P

AUIRLS4030-7P

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier

3216 1.00
- +

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Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) 4.5V, 10V 3.9mOhm @ 110A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11490 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA28N50

Таблицы данных

FQA28N50

FQA28N50

28.4A, 500V, 0.16OHM, N-CHANNEL

Fairchild Semiconductor

3169 1.00
- +

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Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 28.4A (Tc) 10V 160mOhm @ 14.2A, 10V 5V @ 250µA 140 nC @ 10 V ±30V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK03M1DPA-00#J5A

Таблицы данных

RJK03M1DPA-00#J5A

RJK03M1DPA-00#J5A

MOSFET N-CH 30V 50A 8WPAK

Renesas Electronics America Inc

2613 1.86
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Ta) 4.5V, 10V 2.3mOhm @ 25A, 10V - 25 nC @ 4.5 V ±20V 4720 pF @ 10 V - 45W (Tc) 150°C (TJ) Surface Mount
AUIRLR3105

Таблицы данных

AUIRLR3105

AUIRLR3105

MOSFET N-CH 55V 25A DPAK

International Rectifier

2197 1.00
- +

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Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 25A (Tc) - 37mOhm @ 15A, 10V 3V @ 250µA 20 nC @ 5 V ±16V 710 pF @ 25 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR514DP-T1-RE3 SIR514DP-T1-RE3

SIR514DP-T1-RE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix

3480 2.07
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 20.8A (Ta), 84.8A (Tc) 7.5V, 10V 5.8mOhm @ 10A, 10V 4V @ 250µA 47 nC @ 10 V ±20V 2550 pF @ 50 V - 5W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRLR2908TRL

Таблицы данных

AUIRLR2908TRL

AUIRLR2908TRL

AUTOMOTIVE POWER MOSFET

International Rectifier

2810 1.00
- +

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) - 28mOhm @ 23A, 10V 2.5V @ 250µA 33 nC @ 4.5 V - 1890 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR2905

Таблицы данных

AUIRLR2905

AUIRLR2905

MOSFET N-CH 55V 42A DPAK

International Rectifier

3610 1.00
- +

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Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP045N10A FDP045N10A

FDP045N10A

120A, 100V, 0.0045OHM, N CHANNEL

Fairchild Semiconductor

3617 1.00
- +

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 100A, 10V 4V @ 250µA 74 nC @ 10 V ±20V 5270 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLR120N

Таблицы данных

AUIRLR120N

AUIRLR120N

AUTOMOTIVE HEXFET N-CHANNEL

International Rectifier

3257 1.00
- +

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 185mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK764R0-75C,118 BUK764R0-75C,118

BUK764R0-75C,118

PFET, 100A I(D), 75V, 0.004OHM

NXP USA Inc.

3433 0.00
- +

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Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 142 nC @ 10 V ±20V 11659 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ)
FDFME3N311ZT

Таблицы данных

FDFME3N311ZT

FDFME3N311ZT

MOSFET N-CH 30V 1.8A 6UMLP

Fairchild Semiconductor

3396 1.00
- +

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 1.8A (Ta) - 299mOhm @ 1.6A, 4.5V 1.5V @ 250µA 1.4 nC @ 4.5 V ±12V 75 pF @ 15 V - 600mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP6N70

Таблицы данных

FQP6N70

FQP6N70

6.2A, 700V, 1.5OHM, N-CHANNEL

Fairchild Semiconductor

2679 0.00
- +

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Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 700 V 6.2A (Tc) 10V 1.5Ohm @ 3.1A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1400 pF @ 25 V - 142W (Tc) -55°C ~ 150°C (TJ)
FQA24N50

Таблицы данных

FQA24N50

FQA24N50

24A, 500V, 0.2OHM, N-CHANNEL, M

Fairchild Semiconductor

3209 1.00
- +

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Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 200mOhm @ 12A, 10V 5V @ 250µA 120 nC @ 10 V ±30V 4500 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7850DP-T1-GE3

Таблицы данных

SI7850DP-T1-GE3

SI7850DP-T1-GE3

MOSFET N-CH 60V 6.2A PPAK SO-8

Vishay Siliconix

2009 2.09
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 6.2A (Ta) 4.5V, 10V 22mOhm @ 10.3A, 10V 3V @ 250µA 27 nC @ 10 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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