Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RD3U080AAFRATL

Таблицы данных

RD3U080AAFRATL

RD3U080AAFRATL

250V 8A TO-252, AUTOMOTIVE POWER

Rohm Semiconductor

2415 2.24
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 300mOhm @ 4A, 10V 5V @ 1mA 25 nC @ 10 V ±30V 1440 pF @ 25 V - 85W (Tc) 150°C (TJ) Surface Mount
RJK1054DPB-00#J5

Таблицы данных

RJK1054DPB-00#J5

RJK1054DPB-00#J5

MOSFET N-CH 100V 20A LFPAK

Renesas Electronics America Inc

2049 1.07
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta) 10V 22mOhm @ 10A, 10V - 27 nC @ 10 V ±20V 2000 pF @ 10 V - 55W (Tc) 150°C (TJ) Surface Mount
FQPF12P20XDTU FQPF12P20XDTU

FQPF12P20XDTU

MOSFET P-CH 200V 7.3A TO-220F

Fairchild Semiconductor

3001 1.00
- +

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Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 200 V 7.3A (Tc) 10V 470mOhm @ 3.65A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1200 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMC6683PZ FDMC6683PZ

FDMC6683PZ

14A, 20V, 0.0084OHM, P-CHANNEL

Fairchild Semiconductor

2859 0.00
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Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 40A (Tc) 2.5V, 4.5V - 1.5V @ 250µA 74 nC @ 10 V ±12V 7995 pF @ 10 V - 26W (Tc) -55°C ~ 150°C (TJ)
NVTFS5824NLTAG

Таблицы данных

NVTFS5824NLTAG

NVTFS5824NLTAG

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor

3292 1.00
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Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 37A (Tc) 4.5V, 10V 20.5mOhm @ 10A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 850 pF @ 25 V - 3.2W (Ta), 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3709STRLPBF

Таблицы данных

IRF3709STRLPBF

IRF3709STRLPBF

HEXFET SMPS POWER MOSFET

International Rectifier

3883 1.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 41 nC @ 5 V ±20V 2672 pF @ 16 V - 3.1W (Ta), 120W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF5805TRPBF IRF5805TRPBF

IRF5805TRPBF

IRF5805 - TRANSISTOR

International Rectifier

3537 1.00
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Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 3.8A (Ta) 4.5V, 10V 98mOhm @ 3.8A, 10V 2.5V @ 250µA 17 nC @ 10 V ±20V 511 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC86106LZ FDMC86106LZ

FDMC86106LZ

MOSFET N-CH 100V 3.3A POWER33

Fairchild Semiconductor

2039 1.00
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Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 3.3A (Ta), 7.5A (Tc) - 103mOhm @ 3.3A, 10V 2.2V @ 250µA 6 nC @ 10 V - 310 pF @ 50 V - 2.3W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDI045N10A FDI045N10A

FDI045N10A

MOSFET N-CH 100V 120A I2PAK-3

Fairchild Semiconductor

3582 1.00
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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 100A, 10V 4V @ 250µA 74 nC @ 10 V ±20V 5270 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDT434P FDT434P

FDT434P

6A, 20V, 0.05OHM, P-CHANNEL, MO

Fairchild Semiconductor

3795 0.00
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Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Ta) 2.5V, 4.5V 50mOhm @ 6A, 4.5V 1V @ 250µA 19 nC @ 4.5 V ±8V 1187 pF @ 10 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF2907ZSPBF IRF2907ZSPBF

IRF2907ZSPBF

MOSFET N-CH 75V 160A D2PAK

International Rectifier

2228 1.00
- +

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 160A (Tc) - 4.5mOhm @ 75A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR572DP-T1-RE3

Таблицы данных

SIR572DP-T1-RE3

SIR572DP-T1-RE3

N-CHANNEL 150 V (D-S) MOSFET POW

Vishay Siliconix

3754 2.12
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 150 V 14.8A (Ta), 59.7A (Tc) 7.5V, 10V 10.8mOhm @ 10A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 2733 pF @ 75 V - 5.7W (Ta), 92.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STD5NM50AG

Таблицы данных

STD5NM50AG

STD5NM50AG

MOSFET N-CH 500V 7.5A DPAK

STMicroelectronics

2086 2.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® MDmesh™ Active N-Channel MOSFET (Metal Oxide) 500 V 7.5A (Tc) 10V 800mOhm @ 2.5A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 415 pF @ 100 V - 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TN0110N3-G-P002

Таблицы данных

TN0110N3-G-P002

TN0110N3-G-P002

MOSFET N-CH 100V 350MA TO92-3

Microchip Technology

3167 1.42
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 350mA (Tj) 4.5V, 10V 3Ohm @ 500mA, 10V 2V @ 500µA - ±20V 60 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6218PBF

Таблицы данных

IRF6218PBF

IRF6218PBF

AUTOMOTIVE HEXFET P-CHANNEL

International Rectifier

3579 1.00
- +

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Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1607PBF

Таблицы данных

IRF1607PBF

IRF1607PBF

MOSFET N-CH 75V 142A TO220AB

International Rectifier

2394 1.00
- +

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 142A (Tc) - 7.5mOhm @ 85A, 10V 4V @ 250µA 320 nC @ 10 V ±20V 7750 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
MCU80P06Y-TP

Таблицы данных

MCU80P06Y-TP

MCU80P06Y-TP

P-CHANNEL MOSFET,DPAK

Micro Commercial Co

3232 2.34
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 60 V 80A 10V 8.4mOhm @ 20A, 10V 4V @ 250µA 82 nC @ 10 V ±18V 5450 pF @ 30 V - 120W (Tj) -55°C ~ 150°C (TJ) Surface Mount
AUIRLR3636

Таблицы данных

AUIRLR3636

AUIRLR3636

MOSFET N-CH 60V 50A DPAK

International Rectifier

2979 1.00
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Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP032N08

Таблицы данных

FDP032N08

FDP032N08

120A, 75V, 0.0032OHM, N CHANNEL

Texas Instruments

3198 1.00
- +

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Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.2mOhm @ 75A, 10V 4.5V @ 250µA 220 nC @ 10 V ±20V 15160 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
TQM300NB06CR RLG TQM300NB06CR RLG

TQM300NB06CR RLG

MOSFET N-CH 60V 6A/27A 8PDFNU

Taiwan Semiconductor Corporation

3053 2.34
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta), 27A (Tc) 7V, 10V 30mOhm @ 6A, 10V 3.8V @ 250µA 20 nC @ 10 V ±20V 1009 pF @ 30 V - 3.1W (Ta), 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
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