Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
|
FCPF20N60ST20A, 600V, 0.19OHM, N CHANNEL |
3000 | 0.00 |
ДобавитьРасследования |
Bulk | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | - | - | - | - | - | - | - | - | - | |
| |
|
BUK6211-75C,118MOSFET N-CH 75V 74A DPAK |
3391 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 74A (Ta) | - | 11mOhm @ 25A, 10V | 2.8V @ 1mA | 81 nC @ 10 V | ±16V | 5251 pF @ 25 V | - | 158W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
.jpg)
|
SIHFBE30STRL-GE3MOSFET N-CHANNEL 800V |
3956 | 1.92 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.1A (Tc) | 10V | 3Ohm @ 2.5A, 10V | 4V @ 250µA | 78 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
|
BUK6218-40C,118PFET, 42A I(D), 40V, 0.028OHM, 1 |
3605 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 10V | 16mOhm @ 10A, 10V | 2.8V @ 1mA | 22 nC @ 10 V | ±16V | 1170 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
BUK96180-100A,118MOSFET N-CH 100V 11A D2PAK |
2156 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta) | - | 173mOhm @ 5A, 10V | 2V @ 1mA | - | ±15V | 619 pF @ 25 V | - | 54W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IPD42DP15LMATMA1TRENCH >=100V PG-TO252-3 |
3966 | 2.32 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 1.7A (Ta), 9A (Tc) | 4.5V, 10V | 420mOhm @ 8.2A, 10V | 2V @ 1.04mA | 43 nC @ 10 V | ±20V | 2100 pF @ 75 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
RD3L07BATTL1PCH -60V -70A POWER MOSFET - RD3 |
3360 | 2.48 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 70A (Ta) | 4.5V, 10V | 12.7mOhm @ 70A, 10V | 2.5V @ 1mA | 105 nC @ 10 V | ±20V | 6700 pF @ 30 V | - | 101W (Ta) | 150°C (TJ) | Surface Mount |
| |
|
IRF7468TRPBFSMPS HEXFET POWER MOSFET |
2904 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 9.4A (Ta) | 4.5V, 10V | 15.5mOhm @ 9.4A, 10V | 2V @ 250µA | 34 nC @ 4.5 V | ±12V | 2460 pF @ 20 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRF7488TRPBFPOWER FIELD-EFFECT TRANSISTOR, 6 |
2441 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 6.3A (Ta) | 10V | 29mOhm @ 3.8A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±20V | 1680 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRF7807VPBFHEXFET POWER MOSFET |
3492 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 3V @ 250µA | 14 nC @ 5 V | ±20V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
|
IRLU3915PBFIRLU3915 - HEXFET POWER MOSFET |
2138 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 30A (Tc) | 5V, 10V | 14mOhm @ 30A, 10V | 3V @ 250µA | 92 nC @ 10 V | ±16V | 1870 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
|
IRFPS3810PBFMOSFET N-CH 100V 170A SUPER-247 |
2214 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | - | 9mOhm @ 100A, 10V | 5V @ 250µA | 390 nC @ 10 V | ±30V | 6790 pF @ 25 V | - | 580W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
|
AUIRFR1010ZAUTOMOTIVE N CHANNEL |
2656 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | - | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95 nC @ 10 V | - | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRF1010ZSPBFMOSFET N-CH 55V 75A D2PAK |
2636 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | - | 7.5mOhm @ 75A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
| |
|
BUK6215-75C,118MOSFET N-CH 75V 57A DPAK |
3214 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 57A (Ta) | - | 15mOhm @ 15A, 10V | 2.8V @ 1mA | 61.8 nC @ 10 V | ±16V | 3900 pF @ 25 V | - | 128W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
HUF75343S375 A, 55 V, 0.009 OHM, N-CHANNEL |
2159 | 1.00 |
ДобавитьРасследования |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 9mOhm @ 75A, 10V | 4V @ 250µA | 205 nC @ 20 V | ±20V | 3000 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
| |
|
IRF8707PBFMOSFET N-CH 30V 11A 8SO |
3156 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | - | 11.9mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3 nC @ 4.5 V | ±20V | 760 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
|
IRLR120NPBFHEXFET POWER MOSFET |
3303 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 4V, 10V | 185mOhm @ 6A, 10V | 2V @ 250µA | 20 nC @ 5 V | ±16V | 440 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRFB23N15DPBFIRFB23N15 - SMPS HEXFET POWER MO |
3048 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 23A (Tc) | 10V | 90mOhm @ 14A, 10V | 5.5V @ 250µA | 56 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 3.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
|
IRLR7843PBFHEXFET POWER MOSFET |
3329 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 161A (Tc) | 4.5V, 10V | 3.3mOhm @ 15A, 10V | 2.3V @ 250µA | 50 nC @ 4.5 V | ±20V | 4380 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
Запрос котировок
