Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IPA65R190C7XKSA1MOSFET N-CH 650V 8A TO220-FP |
2760 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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R6015ENXMOSFET N-CH 600V 15A TO220FM |
2030 | 3.99 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±20V | 910 pF @ 25 V | - | 40W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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STV270N4F3MOSFET N-CH 40V 270A 10POWERSO |
3216 | 6.40 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | STripFET™ III | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 270A (Tc) | 10V | 1.5mOhm @ 80A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 7500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCP150N65FMOSFET N-CH 650V 24A TO220-3 |
3801 | 4.04 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 2.4mA | 93 nC @ 10 V | ±20V | 3737 pF @ 100 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG25N50E-GE3MOSFET N-CH 500V 26A TO247AC |
3356 | 4.04 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1980 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCPF13N60NTMOSFET N-CH 600V 13A TO220F |
3375 | 4.05 |
ДобавитьРасследования |
Tube | SuperMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 258mOhm @ 6.5A, 10V | 4V @ 250µA | 39.5 nC @ 10 V | ±30V | 1765 pF @ 100 V | - | 33.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHB33N60ET1-GE3MOSFET N-CH 600V 33A TO263 |
2809 | 6.47 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±30V | 3508 pF @ 100 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFP12N65X2MOSFET N-CH 650V 12A TO220AB |
3920 | 4.06 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 310mOhm @ 6A, 10V | 5V @ 250µA | 18.5 nC @ 10 V | ±30V | 1134 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STF3NK100ZMOSFET N-CH 1000V 2.5A TO220FP |
3173 | 4.07 |
ДобавитьРасследования |
Tube | SuperMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 2.5A (Tc) | 10V | 6Ohm @ 1.25A, 10V | 4.5V @ 50µA | 18 nC @ 10 V | ±30V | 601 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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PSMN2R5-60PLQMOSFET N-CH 60V 150A TO220AB |
2106 | 4.07 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 150A (Tc) | 4.5V, 10V | 2.6mOhm @ 25A, 10V | 2.1V @ 1mA | 223 nC @ 10 V | ±20V | - | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SIHA22N60E-E3MOSFET N-CH 600V 21A TO220 |
3011 | 4.08 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1920 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STB34N65M5MOSFET N-CH 650V 28A D2PAK |
2738 | 6.85 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 62.5 nC @ 10 V | ±25V | 2700 pF @ 100 V | - | 190W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STB24NM60NMOSFET N-CH 600V 17A D2PAK |
762 | 6.88 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 17A (Tc) | 10V | 190mOhm @ 8A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±30V | 1400 pF @ 50 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFP12N65X2MMOSFET N-CH 650V 12A TO220 |
300 | 4.14 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 310mOhm @ 6A, 10V | 5V @ 250µA | 18.5 nC @ 10 V | ±30V | 1134 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG22N50D-E3MOSFET N-CH 500V 22A TO247AC |
2654 | 4.16 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 22A (Tc) | 10V | 230mOhm @ 11A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±30V | 1938 pF @ 100 V | - | 312W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHP21N60EF-GE3MOSFET N-CH 600V 21A TO220AB |
3058 | 4.19 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±30V | 2030 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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R6012JNXC7GMOSFET N-CH 600V 12A TO220FM |
3329 | 4.19 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 15V | 390mOhm @ 6A, 15V | 7V @ 2.5mA | 28 nC @ 15 V | ±30V | 900 pF @ 100 V | - | 60W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK25A60X,S5XMOSFET N-CH 600V 25A TO220SIS |
2169 | 4.20 |
ДобавитьРасследования |
Tube | DTMOSIV-H | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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SIHG22N60AE-GE3MOSFET N-CH 600V 20A TO247AC |
3471 | 4.20 |
ДобавитьРасследования |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 96 nC @ 10 V | ±30V | 1451 pF @ 100 V | - | 179W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STP26N60DM6MOSFET N-CH 600V 18A TO220 |
3369 | 4.20 |
ДобавитьРасследования |
Tube | MDmesh™ DM6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 195mOhm @ 9A, 10V | 4.75V @ 250µA | 24 nC @ 10 V | ±25V | 940 pF @ 100 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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