Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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IMZ120R030M1HXKSA1SICFET N-CH 1.2KV 56A TO247-4 |
3430 | 30.40 |
ДобавитьРасследования |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 56A (Tc) | 15V, 18V | 40mOhm @ 25A, 18V | 5.7V @ 10mA | 63 nC @ 18 V | +23V, -7V | 2120 pF @ 800 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFX360N15T2MOSFET N-CH 150V 360A PLUS247-3 |
3588 | 31.23 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 360A (Tc) | 10V | 4mOhm @ 60A, 10V | 5V @ 8mA | 715 nC @ 10 V | ±20V | 47500 pF @ 25 V | - | 1670W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTH4L040N120SC1SICFET N-CH 1200V 58A TO247-4 |
3648 | 31.62 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 56mOhm @ 35A, 20V | 4.3V @ 10mA | 106 nC @ 20 V | +25V, -15V | 1762 pF @ 800 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NVHL020N090SC1SICFET N-CH 900V 118A TO247-3 |
3476 | 33.59 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 118A (Tc) | 15V | 28mOhm @ 60A, 15V | 4.3V @ 20mA | 196 nC @ 15 V | +19V, -10V | 4415 pF @ 450 V | - | 503W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NVBG020N120SC1MOSFET N-CH 1200V 8.6A/98A D2PAK |
2435 | 45.22 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 8.6A (Ta), 98A (Tc) | 20V | 28mOhm @ 60A, 20V | 4.3V @ 20mA | 220 nC @ 20 V | +25V, -15V | 2943 pF @ 800 V | - | 3.7W (Ta), 468W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFN520N075T2MOSFET N-CH 75V 480A SOT227B |
3747 | 34.45 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 480A (Tc) | 10V | 1.9mOhm @ 100A, 10V | 5V @ 8mA | 545 nC @ 10 V | ±20V | 41000 pF @ 25 V | - | 940W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN170N25X3MOSFET N-CH 250V 170A SOT227B |
3429 | 36.34 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 170A (Tc) | 10V | 7.4mOhm @ 85A, 10V | 4.5V @ 4mA | 190 nC @ 10 V | ±20V | 13500 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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NTBG020N120SC1SICFET N-CH 1200V 8.6A/98A D2PAK |
3907 | 50.26 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 8.6A (Ta), 98A (Tc) | 20V | 28mOhm @ 60A, 20V | 4.3V @ 20mA | 220 nC @ 20 V | +25V, -15V | 2943 pF @ 800 V | - | 3.7W (Ta), 468W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTK110N20L2MOSFET N-CH 200V 110A TO264 |
3247 | 37.96 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 110A (Tc) | 10V | 24mOhm @ 55A, 10V | 4.5V @ 3mA | 500 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTK200N10L2MOSFET N-CH 100V 200A TO264 |
2516 | 37.96 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 11mOhm @ 100A, 10V | 4.5V @ 3mA | 540 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN110N60P3MOSFET N-CH 600V 90A SOT227B |
2837 | 38.29 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 90A (Tc) | 10V | 56mOhm @ 55A, 10V | 5V @ 8mA | 245 nC @ 10 V | ±30V | 18000 pF @ 25 V | - | 1500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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MSC015SMA070B4TRANS SJT N-CH 700V 140A TO247-4 |
3919 | 39.35 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 140A (Tc) | 20V | 19mOhm @ 40A, 20V | 2.4V @ 4mA | 215 nC @ 20 V | +23V, -10V | 4500 pF @ 700 V | - | 455W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTX400N15X4MOSFET N-CH 150V 400A PLUS247 |
2638 | 43.20 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4.5V @ 1mA | 430 nC @ 10 V | ±20V | 14500 pF @ 25 V | - | 1500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN66N85XMOSFET N-CH 850V 65A SOT227B |
237 | 44.93 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 850 V | 65A (Tc) | 10V | 65mOhm @ 33A, 10V | 5.5V @ 8mA | 230 nC @ 10 V | ±30V | 8900 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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APT50M65JFLLMOSFET N-CH 500V 58A ISOTOP |
2679 | 46.74 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 58A (Tc) | 10V | 65mOhm @ 29A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN210N30X3MOSFET N-CH 300V 210A SOT227B |
3819 | 47.21 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 210A (Tc) | 10V | 4.6mOhm @ 105A, 10V | 4.5V @ 8mA | 375 nC @ 10 V | ±20V | 24200 pF @ 25 V | - | 695W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN360N15T2MOSFET N-CH 150V 310A SOT227B |
3482 | 48.92 |
ДобавитьРасследования |
Tube | HiPerFET™, TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 310A (Tc) | 10V | 4mOhm @ 60A, 10V | 5V @ 8mA | 715 nC @ 10 V | ±20V | 47500 pF @ 25 V | - | 1070W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTN60N50L2MOSFET N-CH 500V 53A SOT227B |
3371 | 49.37 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 53A (Tc) | 10V | 100mOhm @ 30A, 10V | 4.5V @ 250µA | 610 nC @ 10 V | ±30V | 24000 pF @ 25 V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTN90N25L2MOSFET N-CH 250V 90A SOT227B |
2409 | 49.37 |
ДобавитьРасследования |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 90A (Tc) | 10V | 33mOhm @ 500mA, 10V | 4.5V @ 3mA | 640 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 735W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXTN200N10L2MOSFET N-CH 100V 178A SOT227B |
950 | 49.37 |
ДобавитьРасследования |
Bulk | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 178A (Tc) | 10V | 11mOhm @ 100A, 10V | 4.5V @ 3mA | 540 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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