Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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IPP220N25NFDAKSA1MOSFET N-CH 250V 61A TO220-3 |
2875 | 8.18 |
ДобавитьРасследования |
Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 61A (Tc) | 10V | 22mOhm @ 61A, 10V | 4V @ 270µA | 86 nC @ 10 V | ±20V | 7076 pF @ 125 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH200N10TMOSFET N-CH 100V 200A TO247 |
2054 | 9.22 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 200A (Tc) | 10V | 5.5mOhm @ 50A, 10V | 4.5V @ 250µA | 152 nC @ 10 V | ±30V | 9400 pF @ 25 V | - | 550W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFP4368PBFMOSFET N-CH 75V 195A TO247AC |
3642 | 9.36 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 10V | 1.85mOhm @ 195A, 10V | 4V @ 250µA | 570 nC @ 10 V | ±20V | 19230 pF @ 50 V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA1N200P3HVMOSFET N-CH 2000V 1A TO263 |
2048 | 9.58 |
ДобавитьРасследования |
Tube | Polar P3™ | Active | N-Channel | MOSFET (Metal Oxide) | 2000 V | 1A (Tc) | 10V | 40Ohm @ 500mA, 10V | 4V @ 250µA | 23.5 nC @ 10 V | ±20V | 646 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFA80N25X3MOSFET N-CH 250V 80A TO263AA |
3317 | 9.65 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 80A (Tc) | 10V | 16mOhm @ 40A, 10V | 4.5V @ 1.5mA | 83 nC @ 10 V | ±20V | 5430 pF @ 25 V | - | 390W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP200N25N3GXKSA1MOSFET N-CH 250V 64A TO220-3 |
2437 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 64A (Tc) | 10V | 20mOhm @ 64A, 10V | 4V @ 270µA | 86 nC @ 10 V | ±20V | 7100 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTH110N25TMOSFET N-CH 250V 110A TO247 |
2238 | 9.98 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 110A (Tc) | 10V | 24mOhm @ 55A, 10V | 4.5V @ 1mA | 157 nC @ 10 V | ±20V | 9400 pF @ 25 V | - | 694W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STB42N65M5MOSFET N-CH 650V 33A D2PAK |
3876 | 13.36 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 79mOhm @ 16.5A, 10V | 5V @ 250µA | 100 nC @ 10 V | ±25V | 4650 pF @ 100 V | - | 190W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STW56N60M2MOSFET N-CH 600V 52A TO247 |
2666 | 10.15 |
ДобавитьРасследования |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Tc) | 10V | 55mOhm @ 26A, 10V | 4V @ 250µA | 91 nC @ 10 V | ±25V | 3750 pF @ 100 V | - | 350W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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STH12N120K5-2MOSFET N-CH 1200V 12A H2PAK-2 |
3703 | 13.47 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFP4468PBFMOSFET N-CH 100V 195A TO247AC |
2516 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 195A (Tc) | 10V | 2.6mOhm @ 180A, 10V | 4V @ 250µA | 540 nC @ 10 V | ±20V | 19860 pF @ 50 V | - | 520W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFH56N30X3MOSFET N-CH 300V 56A TO247 |
3473 | 10.75 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 56A (Tc) | 10V | 27mOhm @ 28A, 10V | 4.5V @ 1.5mA | 56 nC @ 10 V | ±20V | 3750 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPBE65R050CFD7AATMA1MOSFET N-CH 650V 45A TO263-7 |
3815 | 15.85 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 50mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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G3R75MT12DSIC MOSFET N-CH 41A TO247-3 |
2658 | 11.13 |
ДобавитьРасследования |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 207W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRF200P222MOSFET N-CH 200V 182A TO247AC |
3844 | 11.29 |
ДобавитьРасследования |
Tube | StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 182A (Tc) | 10V | 6.6mOhm @ 82A, 10V | 4V @ 270µA | 203 nC @ 10 V | ±20V | 9820 pF @ 50 V | - | 556W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA86N20X4MOSFET 200V 86A N-CH ULTRA TO263 |
3245 | 11.57 |
ДобавитьРасследования |
Tube | Ultra X4 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 86A (Tc) | 10V | 13mOhm @ 43A, 10V | 4.5V @ 250µA | 70 nC @ 10 V | ±20V | 2250 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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STB57N65M5MOSFET N-CH 650V 42A D2PAK |
2693 | 15.40 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±25V | 4200 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPW65R080CFDFKSA1MOSFET N-CH 700V 43.3A TO247-3 |
3729 | 12.26 |
ДобавитьРасследования |
Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 700 V | 43.3A (Tc) | 10V | 80mOhm @ 17.6A, 10V | 4.5V @ 1.76mA | 170 nC @ 10 V | ±20V | 5030 pF @ 100 V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SUG90090E-GE3MOSFET N-CH 200V 100A TO247AC |
100 | 4.60 |
ДобавитьРасследования |
Tube | ThunderFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 100A (Tc) | 7.5V, 10V | 9.5mOhm @ 20A, 10V | 4V @ 250µA | 129 nC @ 10 V | ±20V | 5220 pF @ 100 V | - | 395W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FCH023N65S3-F155MOSFET N-CH 650V 75A TO247 |
2569 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 23mOhm @ 37.5A, 10V | 4.5V @ 7.5mA | 222 nC @ 10 V | ±30V | 7160 pF @ 400 V | Super Junction | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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