Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTH20P50P

Таблицы данных

IXTH20P50P

IXTH20P50P

MOSFET P-CH 500V 20A TO247

IXYS

3655 12.93
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Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 450mOhm @ 10A, 10V 4V @ 250µA 103 nC @ 10 V ±20V 5120 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3SC065030B7S

Таблицы данных

UF3SC065030B7S

UF3SC065030B7S

650V/30MOHM, SIC, STACKED FAST C

UnitedSiC

2569 19.54
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel SiCFET (Cascode SiCJFET) 650 V 62A (Tc) 12V 35mOhm @ 40A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 214W (Tc) 175°C (TJ) Surface Mount
IXTH240N15X4

Таблицы данных

IXTH240N15X4

IXTH240N15X4

MOSFET N-CH 150V 240A TO247

IXYS

3881 13.89
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Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 150 V 240A (Tc) 10V 4.4mOhm @ 120A, 10V 4.5V @ 250µA 195 nC @ 10 V ±20V 8900 pF @ 25 V - 940W (Tc) -55°C ~ 175°C (TJ) Through Hole
UF3C065040K4S

Таблицы данных

UF3C065040K4S

UF3C065040K4S

MOSFET N-CH 650V 54A TO247-4

UnitedSiC

2650 14.22
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Tube - Active N-Channel - 650 V 54A (Tc) 12V 52mOhm @ 40A, 12V 6V @ 10mA 43 nC @ 12 V ±25V 1500 pF @ 100 V - 326W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R080CFDAFKSA1

Таблицы данных

IPW65R080CFDAFKSA1

IPW65R080CFDAFKSA1

MOSFET N-CH 650V 43.3A TO247-3

Infineon Technologies

3697 1.00
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Bulk,Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 43.3A (Tc) 10V 80mOhm @ 17.6A, 10V 4.5V @ 1.76mA 161 nC @ 10 V ±20V 4440 pF @ 100 V - 391W (Tc) -40°C ~ 150°C (TJ) Through Hole
NTBG040N120SC1

Таблицы данных

NTBG040N120SC1

NTBG040N120SC1

SICFET N-CH 1200V 60A D2PAK-7

onsemi

116 21.66
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 20V 56mOhm @ 35A, 20V 4.3V @ 10mA 106 nC @ 20 V +25V, -15V 1789 pF @ 800 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH320N10T2

Таблицы данных

IXFH320N10T2

IXFH320N10T2

MOSFET N-CH 100V 320A TO247AD

IXYS

980 15.75
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Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 320A (Tc) 10V 3.5mOhm @ 100A, 10V 4V @ 250µA 430 nC @ 10 V ±20V 26000 pF @ 25 V - 1000W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPT60R028G7XTMA1

Таблицы данных

IPT60R028G7XTMA1

IPT60R028G7XTMA1

MOSFET N-CH 600V 75A 8HSOF

Infineon Technologies

2842 1.00
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 600 V 75A (Tc) 10V 28mOhm @ 28.8A, 10V 4V @ 1.44mA 123 nC @ 10 V ±20V 4820 pF @ 400 V - 391W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SCT3160KLHRC11

Таблицы данных

SCT3160KLHRC11

SCT3160KLHRC11

SICFET N-CH 1200V 17A TO247N

Rohm Semiconductor

3119 16.56
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Tube Automotive, AEC-Q101 Not For New Designs N-Channel SiCFET (Silicon Carbide) 1200 V 17A (Tc) 18V 208mOhm @ 5A, 18V 5.6V @ 2.5mA 42 nC @ 18 V +22V, -4V 398 pF @ 800 V - 103W 175°C (TJ) Through Hole
2N6661

Таблицы данных

2N6661

2N6661

MOSFET N-CH 90V 350MA TO39

Microchip Technology

3069 16.57
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Bag - Active N-Channel MOSFET (Metal Oxide) 90 V 350mA (Tj) 5V, 10V 4Ohm @ 1A, 10V 2V @ 1mA - ±20V 50 pF @ 24 V - 6.25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP65R045C7XKSA1

Таблицы данных

IPP65R045C7XKSA1

IPP65R045C7XKSA1

MOSFET N-CH 650V 46A TO220-3

Infineon Technologies

3988 16.78
- +

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Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPZ60R040C7XKSA1

Таблицы данных

IPZ60R040C7XKSA1

IPZ60R040C7XKSA1

MOSFET N-CH 600V 50A TO247-4

Infineon Technologies

3504 17.36
- +

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Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 40mOhm @ 24.9A, 10V 4V @ 1.24mA 107 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R041CFDFKSA1

Таблицы данных

IPW65R041CFDFKSA1

IPW65R041CFDFKSA1

MOSFET N-CH 650V 68.5A TO247-3

Infineon Technologies

2731 17.75
- +

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Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 68.5A (Tc) 10V 41mOhm @ 33.1A, 10V 4.5V @ 3.3mA 300 nC @ 10 V ±20V 8400 pF @ 100 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH02N250

Таблицы данных

IXTH02N250

IXTH02N250

MOSFET N-CH 2500V 200MA TO247

IXYS

3693 18.00
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Tube - Active N-Channel MOSFET (Metal Oxide) 2500 V 200mA (Tc) 10V 450Ohm @ 50mA, 10V 4.5V @ 250µA 7.4 nC @ 10 V ±20V 116 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK80N60P3

Таблицы данных

IXFK80N60P3

IXFK80N60P3

MOSFET N-CH 600V 80A TO264AA

IXYS

2273 18.19
- +

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Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 80A (Tc) 10V 70mOhm @ 500mA, 10V 5V @ 8mA 190 nC @ 10 V ±30V 13100 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR140N20P

Таблицы данных

IXFR140N20P

IXFR140N20P

MOSFET N-CH 200V 90A ISOPLUS247

IXYS

2286 18.58
- +

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Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 22mOhm @ 45A, 10V 5V @ 4mA 240 nC @ 10 V ±20V 7500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVBG040N120SC1

Таблицы данных

NVBG040N120SC1

NVBG040N120SC1

TRANS SJT N-CH 1200V 60A D2PAK-7

onsemi

2612 26.13
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 60A (Tc) 20V 56mOhm @ 35A, 20V 4.3V @ 10mA 106 nC @ 20 V +25V, -15V 1789 pF @ 800 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STWA88N65M5

Таблицы данных

STWA88N65M5

STWA88N65M5

MOSFET N-CH 650V 84A TO247

STMicroelectronics

2202 19.56
- +

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Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 84A (Tc) 10V 29mOhm @ 42A, 10V 5V @ 250µA 204 nC @ 10 V ±25V 8825 pF @ 100 V - 450W (Tc) 150°C (TJ) Through Hole
STW65N80K5

Таблицы данных

STW65N80K5

STW65N80K5

MOSFET N-CH 800V 46A TO247

STMicroelectronics

3175 19.64
- +

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Расследования

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 800 V 46A (Tc) 10V 80mOhm @ 23A, 10V 5V @ 100µA 92 nC @ 10 V ±30V 3230 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK180N25T

Таблицы данных

IXFK180N25T

IXFK180N25T

MOSFET N-CH 250V 180A TO264AA

IXYS

3268 19.74
- +

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Расследования

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 180A (Tc) 10V 12.9mOhm @ 60A, 10V 5V @ 8mA 345 nC @ 10 V ±20V 28000 pF @ 25 V - 1390W (Tc) -55°C ~ 150°C (TJ) Through Hole
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