Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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UJ3C065030K3SMOSFET N-CH 650V 85A TO247-3 |
2815 | 19.91 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | - | 650 V | 85A (Tc) | 12V | 35mOhm @ 50A, 12V | 6V @ 10mA | 51 nC @ 15 V | ±25V | 1500 pF @ 100 V | - | 441W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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NTH027N65S3F-F155MOSFET N-CH 650V 75A TO247-3 |
2273 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | FRFET®, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 27.4mOhm @ 35A, 10V | 5V @ 7.5mA | 259 nC @ 10 V | ±30V | 7690 pF @ 400 V | - | 595W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCT3105KLHRC11SICFET N-CH 1200V 24A TO247N |
2918 | 22.95 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 24A (Tc) | 18V | 137mOhm @ 7.6A, 18V | 5.6V @ 3.81mA | 51 nC @ 18 V | +22V, -4V | 574 pF @ 800 V | - | 134W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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FCH76N60NMOSFET N-CH 600V 76A TO247-3 |
3770 | 23.05 |
ДобавитьРасследования |
Tube | SupreMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 36mOhm @ 38A, 10V | 4V @ 250µA | 285 nC @ 10 V | ±30V | 12385 pF @ 100 V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFR140N30PMOSFET N-CH 300V 70A ISOPLUS247 |
2099 | 23.69 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 70A (Tc) | 10V | 26mOhm @ 70A, 10V | 5V @ 8mA | 185 nC @ 10 V | ±20V | 14800 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AIMW120R045M1XKSA1SICFET N-CH 1200V 52A TO247-3 |
3182 | 24.04 |
ДобавитьРасследования |
Bulk,Tube | Automotive, AEC-Q101, CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | - | 59mOhm @ 20A, 15V | 5.7V @ 10mA | 57 nC @ 15 V | +20V, -7V | 2130 pF @ 800 V | - | 228W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFT170N25X3HVMOSFET N-CH 250V 170A TO268HV |
3612 | 21.95 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 170A (Tc) | 10V | 7.4mOhm @ 85A, 10V | 4.5V @ 4mA | 190 nC @ 10 V | ±20V | 13500 pF @ 25 V | - | 960W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTX40P50PMOSFET P-CH 500V 40A PLUS247-3 |
2516 | 22.60 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 40A (Tc) | 10V | 230mOhm @ 20A, 10V | 4V @ 1mA | 205 nC @ 10 V | ±20V | 11500 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPB60R055CFD7ATMA1MOSFET N-CH 650V 38A TO263-3-2 |
3743 | 9.31 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | CoolMOS™ CFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 38A (Tc) | 10V | 55mOhm @ 18A, 10V | 4.5V @ 900µA | 79 nC @ 10 V | ±20V | 3194 pF @ 400 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTK170P10PMOSFET P-CH 100V 170A TO264 |
3169 | 22.82 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 170A (Tc) | 10V | 12mOhm @ 500mA, 10V | 4V @ 1mA | 240 nC @ 10 V | ±20V | 12600 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN180N25TMOSFET N-CH 250V 168A SOT227B |
2616 | 24.20 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 168A (Tc) | 10V | 12.9mOhm @ 60A, 10V | 5V @ 8mA | 345 nC @ 10 V | ±20V | 28000 pF @ 25 V | - | 900W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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Таблицы данных |
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NVBG020N090SC1SICFET N-CH 900V 9.8A/112A D2PAK |
3573 | 34.78 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 9.8A (Ta), 112A (Tc) | 15V | 28mOhm @ 60A, 15V | 4.3V @ 20mA | 200 nC @ 15 V | +19V, -10V | 4415 pF @ 450 V | - | 3.7W (Ta), 477W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXFK230N20TMOSFET N-CH 200V 230A TO264AA |
2017 | 25.88 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 230A (Tc) | 10V | 7.5mOhm @ 60A, 10V | 5V @ 8mA | 378 nC @ 10 V | ±20V | 28000 pF @ 25 V | - | 1670W (Tc) | - | Through Hole |
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Таблицы данных |
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VS-FC420SA15MOSFET N-CH 150V 400A SOT227 |
3367 | 26.41 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 400A (Tc) | 10V | 2.75mOhm @ 200A, 10V | 5.4V @ 1mA | 250 nC @ 10 V | ±20V | 13700 pF @ 25 V | - | 909W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFK48N50MOSFET N-CH 500V 48A TO264AA |
2784 | 26.53 |
ДобавитьРасследования |
Tube | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 48A (Tc) | 10V | 100mOhm @ 24A, 10V | 4V @ 8mA | 270 nC @ 10 V | ±20V | 8400 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN360N10TMOSFET N-CH 100V 360A SOT-227B |
3819 | 27.16 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 360A (Tc) | 10V | 2.6mOhm @ 180A, 10V | 4.5V @ 250µA | 505 nC @ 10 V | ±20V | 36000 pF @ 25 V | - | 830W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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IXFN180N15PMOSFET N-CH 150V 150A SOT-227B |
2743 | 27.58 |
ДобавитьРасследования |
Box | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 150A (Tc) | 10V | 11mOhm @ 90A, 10V | 5V @ 4mA | 240 nC @ 10 V | ±20V | 7000 pF @ 25 V | - | 680W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount |
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Таблицы данных |
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IMW120R030M1HXKSA1SICFET N-CH 1.2KV 56A TO247-3 |
2258 | 28.15 |
ДобавитьРасследования |
Tube | CoolSiC™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 56A (Tc) | 15V, 18V | 40mOhm @ 25A, 18V | 5.7V @ 10mA | 63 nC @ 18 V | +23V, -7V | 2120 pF @ 800 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK24N100Q3MOSFET N-CH 1000V 24A TO264AA |
3059 | 28.36 |
ДобавитьРасследования |
Tube | HiPerFET™, Q3 Class | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 24A (Tc) | 10V | 440mOhm @ 12A, 10V | 6.5V @ 4mA | 140 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 1000W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFN64N50PMOSFET N-CH 500V 61A SOT227B |
2521 | 28.81 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 61A (Tc) | 10V | 85mOhm @ 32A, 10V | 5.5V @ 8mA | 150 nC @ 10 V | ±30V | 8700 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
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