Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IXTA10P50PMOSFET P-CH 500V 10A TO263 |
3633 | 6.74 |
ДобавитьРасследования |
Tube | Polar | Active | P-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 2840 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STB43N65M5MOSFET N-CH 650V 42A D2PAK |
2370 | 10.15 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 100 nC @ 10 V | ±25V | 4400 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPB107N20NAATMA1MOSFET N-CH 200V 88A D2PAK |
2948 | 11.21 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 88A (Tc) | 10V | 10.7mOhm @ 88A, 10V | 4V @ 270µA | 87 nC @ 10 V | ±20V | 7100 pF @ 100 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTP96P085TMOSFET P-CH 85V 96A TO220AB |
3631 | 6.90 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 85 V | 96A (Tc) | 10V | 13mOhm @ 48A, 10V | 4V @ 250µA | 180 nC @ 10 V | ±15V | 13100 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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G3R160MT12DSIC MOSFET N-CH 22A TO247-3 |
1787 | 6.91 |
ДобавитьРасследования |
Tube | G3R™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 15V | 192mOhm @ 10A, 15V | 2.69V @ 5mA | 28 nC @ 15 V | ±15V | 730 pF @ 800 V | - | 123W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP26P20PMOSFET P-CH 200V 26A TO220AB |
3310 | 6.92 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 26A (Tc) | 10V | 170mOhm @ 13A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 2740 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FCH072N60FMOSFET N-CH 600V 52A TO247-3 |
3658 | 6.92 |
ДобавитьРасследования |
Tube | FRFET®, SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 52A (Tc) | 10V | 72mOhm @ 26A, 10V | 5V @ 250µA | 215 nC @ 10 V | ±20V | 8660 pF @ 100 V | - | 481W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPB048N15N5LFATMA1MOSFET N-CH 150V 120A D2PAK |
2359 | 11.30 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™-5 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 120A (Tc) | 10V | 4.8mOhm @ 100A, 10V | 4.9V @ 255µA | 84 nC @ 10 V | ±20V | 380 pF @ 75 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPL65R070C7AUMA1MOSFET N-CH 650V 28A 4VSON |
2821 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 28A (Tc) | 10V | 70mOhm @ 8.5A, 10V | 4V @ 850µA | 64 nC @ 10 V | ±20V | 3020 pF @ 100 V | - | 169W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STP4N150MOSFET N-CH 1500V 4A TO220AB |
3029 | 6.94 |
ДобавитьРасследования |
Tube | PowerMESH™ | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 4A (Tc) | 10V | 7Ohm @ 2A, 10V | 5V @ 250µA | 50 nC @ 10 V | ±30V | 1300 pF @ 25 V | - | 160W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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NTMTS001N06CLTXGMOSFET N-CH 60V 398.2A |
2682 | 11.61 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 398.2A (Tc) | 4.5V, 10V | 0.81mOhm @ 50A, 10V | 2.2V @ 250µA | 165 nC @ 10 V | ±20V | 12300 pF @ 25 V | - | 5W | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTA76P10TMOSFET P-CH 100V 76A TO263 |
172 | 7.10 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 76A (Tc) | 10V | 25mOhm @ 38A, 10V | 4V @ 250µA | 197 nC @ 10 V | ±15V | 13700 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTQ52P10PMOSFET P-CH 100V 52A TO3P |
2321 | 7.40 |
ДобавитьРасследования |
Tube | PolarP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 52A (Tc) | 10V | 50mOhm @ 52A, 10V | 4.5V @ 250µA | 60 nC @ 10 V | ±20V | 2845 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRF7769L2TRMOSFET N-CH 100V 375A DIRECTFET |
3559 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 375A (Tc) | 10V | 3.5mOhm @ 74A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 11560 pF @ 25 V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDH055N15AMOSFET N-CH 150V 158A TO247-3 |
2834 | 7.88 |
ДобавитьРасследования |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 158A (Tc) | 10V | 5.9mOhm @ 120A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±20V | 9445 pF @ 75 V | - | 429W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA140P05TMOSFET P-CH 50V 140A TO263 |
3493 | 7.91 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 140A (Tc) | 10V | 9mOhm @ 70A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±15V | 13500 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFS8409-7PMOSFET N-CH 40V 240A D2PAK |
2962 | 7.93 |
ДобавитьРасследования |
Bulk,Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 0.75mOhm @ 100A, 10V | 3.9V @ 250µA | 460 nC @ 10 V | ±20V | 13975 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTH76P10TMOSFET P-CH 100V 76A TO247 |
360 | 7.94 |
ДобавитьРасследования |
Tube | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 76A (Tc) | 10V | 25mOhm @ 38A, 10V | 4V @ 250µA | 197 nC @ 10 V | ±15V | 13700 pF @ 25 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA6N50D2MOSFET N-CH 500V 6A TO263 |
2332 | 7.94 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 6A (Tc) | - | 500mOhm @ 3A, 0V | - | 96 nC @ 5 V | ±20V | 2800 pF @ 25 V | Depletion Mode | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP60R125CPXKSA1MOSFET N-CH 650V 25A TO220-3 |
2774 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 25A (Tc) | 10V | 125mOhm @ 16A, 10V | 3.5V @ 1.1mA | 70 nC @ 10 V | ±20V | 2500 pF @ 100 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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