Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTN22N100L

Таблицы данных

IXTN22N100L

IXTN22N100L

MOSFET N-CH 1000V 22A SOT227B

IXYS

3932 55.29
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Tube Linear Active N-Channel MOSFET (Metal Oxide) 1000 V 22A (Tc) 20V 600mOhm @ 11A, 20V 5.5V @ 250µA 270 nC @ 15 V ±30V 7050 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN82N60Q3

Таблицы данных

IXFN82N60Q3

IXFN82N60Q3

MOSFET N-CH 600V 66A SOT227B

IXYS

2435 58.93
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Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 600 V 66A (Tc) 10V 75mOhm @ 41A, 10V 6.5V @ 8mA 275 nC @ 10 V ±30V 13500 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
2N7002E-7-F

Таблицы данных

2N7002E-7-F

2N7002E-7-F

MOSFET N-CH 60V 250MA SOT23-3

Diodes Incorporated

2376 0.30
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 250mA (Ta) 4.5V, 10V 3Ohm @ 250mA, 10V 2.5V @ 250µA 0.22 nC @ 4.5 V ±20V 50 pF @ 25 V - 370mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS84AKMB,315

Таблицы данных

BSS84AKMB,315

BSS84AKMB,315

MOSFET P-CH 50V 230MA DFN1006B-3

Nexperia USA Inc.

2578 0.36
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 50 V 230mA (Ta) 10V 7.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.35 nC @ 5 V ±20V 36 pF @ 25 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMZB290UNE2YL

Таблицы данных

PMZB290UNE2YL

PMZB290UNE2YL

MOSFET N-CH 20V 1.2A DFN1006B-3

Nexperia USA Inc.

3761 0.37
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 1.5V, 4.5V 320mOhm @ 1.2A, 4.5V 950mV @ 250µA 1.4 nC @ 4.5 V ±8V 46 pF @ 10 V - 350mW (Ta), 5.43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSS138Q-7-F

Таблицы данных

BSS138Q-7-F

BSS138Q-7-F

MOSFET N-CH 50V 200MA SOT23-3

Diodes Incorporated

3069 0.32
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 10V 3.5Ohm @ 220mA, 10V 1.5V @ 250µA - ±20V 50 pF @ 10 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMG1012T-7

Таблицы данных

DMG1012T-7

DMG1012T-7

MOSFET N-CH 20V 630MA SOT-523

Diodes Incorporated

2064 0.34
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 20 V 630mA (Ta) 1.8V, 4.5V 400mOhm @ 600mA, 4.5V 1V @ 250µA 0.74 nC @ 4.5 V ±6V 60.67 pF @ 16 V - 280mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS84K-TP

Таблицы данных

BSS84K-TP

BSS84K-TP

MOSFET P-CH 60V 130MA SOT23

Micro Commercial Co

29924 0.34
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 60 V 130mA (Ta) 4.5V, 10V 6Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 30 pF @ 5 V - 225mW -55°C ~ 150°C (TJ) Surface Mount
BSS138KT-TP

Таблицы данных

BSS138KT-TP

BSS138KT-TP

N-CHANNEL MOSFET, SOT-523

Micro Commercial Co

3114 0.36
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 50 V 250mA - 1.6Ohm @ 500mA, 10V 1.5V @ 250µA 0.7 nC @ 4.5 V ±20V 22800 pF @ 25 V - 250mW -55°C ~ 150°C (TJ) Surface Mount
BSS123

Таблицы данных

BSS123

BSS123

MOSFET N-CH 100V 170MA SOT23-3

onsemi

3376 0.36
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V 2V @ 1mA 2.5 nC @ 10 V ±20V 73 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
RZM002P02T2L

Таблицы данных

RZM002P02T2L

RZM002P02T2L

MOSFET P-CH 20V 200MA VMT3

Rohm Semiconductor

3539 0.38
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active P-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.2V, 4.5V 1.2Ohm @ 200mA, 4.5V 1V @ 100µA 1.4 nC @ 4.5 V ±10V 115 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
UJ4SC075006K4S

Таблицы данных

UJ4SC075006K4S

UJ4SC075006K4S

750V/6MOHM, SIC, STACKED CASCODE

UnitedSiC

3567 68.40
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Tube - Active N-Channel SiCFET (Silicon Carbide) 750 V 120A (Tc) 12V 7.4mOhm @ 80A, 12V 6V @ 10mA 164 nC @ 15 V ±20V 8374 pF @ 400 V - 714W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT53F80J

Таблицы данных

APT53F80J

APT53F80J

MOSFET N-CH 800V 57A ISOTOP

Microchip Technology

3219 72.55
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Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 57A (Tc) 10V 110mOhm @ 43A, 10V 5V @ 5mA 570 nC @ 10 V ±30V 17550 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
G2R50MT33K

Таблицы данных

G2R50MT33K

G2R50MT33K

3300V 50M TO-247-4 SIC MOSFET

GeneSiC Semiconductor

3394 325.24
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Tube G2R™ Active N-Channel SiCFET (Silicon Carbide) 3300 V 63A (Tc) 20V 50mOhm @ 40A, 20V 3.5V @ 10mA (Typ) 340 nC @ 20 V +25V, -10V 7301 pF @ 1000 V Standard 536W (Tc) -55°C ~ 175°C (TJ) Through Hole
SCT3120ALHRC11

Таблицы данных

SCT3120ALHRC11

SCT3120ALHRC11

SICFET N-CH 650V 21A TO247N

Rohm Semiconductor

3313 10.83
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Tube Automotive, AEC-Q101 Not For New Designs N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) 18V 156mOhm @ 6.7A, 18V 5.6V @ 3.33mA 38 nC @ 18 V +22V, -4V 460 pF @ 500 V - 103W 175°C (TJ) Through Hole
IXFH80N65X2

Таблицы данных

IXFH80N65X2

IXFH80N65X2

MOSFET N-CH 650V 80A TO247

IXYS

2384 14.27
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Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 80A (Tc) 10V 40mOhm @ 40A, 10V 5.5V @ 4mA 143 nC @ 10 V ±30V 8245 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK170N20T

Таблицы данных

IXFK170N20T

IXFK170N20T

MOSFET N-CH 200V 170A TO264AA

IXYS

3981 14.91
- +

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Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 170A (Tc) 10V 11mOhm @ 60A, 10V 5V @ 4mA 265 nC @ 10 V ±20V 19600 pF @ 25 V - 1150W (Tc) -55°C ~ 175°C (TJ) Through Hole
2N7002BKVL

Таблицы данных

2N7002BKVL

2N7002BKVL

MOSFET N-CH 60V 350MA TO236AB

Nexperia USA Inc.

2754 0.27
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 350mA (Ta) 10V 1.6Ohm @ 500mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 50 pF @ 10 V - 370mW (Ta) 150°C (TJ) Surface Mount
IPP60R040C7XKSA1

Таблицы данных

IPP60R040C7XKSA1

IPP60R040C7XKSA1

MOSFET N-CH 600V 50A TO220-3

Infineon Technologies

3827 1.00
- +

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Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 50A (Tc) 10V 40mOhm @ 24.9A, 10V 4V @ 1.24mA 107 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSM3K7002KFU,LF

Таблицы данных

SSM3K7002KFU,LF

SSM3K7002KFU,LF

MOSFET N-CH 60V 400MA USM

Toshiba Semiconductor and Storage

2870 0.21
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 4.5V, 10V 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6 nC @ 4.5 V ±20V 40 pF @ 10 V - 150mW (Ta) 150°C Surface Mount
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