Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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P3M06060G7SICFET N-CH 650V 44A TO-263-7 |
2542 | 10.38 |
ДобавитьРасследования |
Tape & Reel (TR) | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 44A | 15V | 79mOhm @ 20A, 15V | 2.2V @ 20mA (Typ) | - | +20V, -8V | - | - | 159W | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
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P3M06060L8SICFET N-CH 650V 40A TOLL |
2700 | 10.38 |
ДобавитьРасследования |
Tape & Reel (TR) | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A | 15V | 79mOhm @ 20A, 15V | 2.4V @ 5mA (Typ) | - | +20V, -8V | - | - | 188W | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
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C3M0075120J-TRSICFET N-CH 1200V 30A TO263-7 |
2165 | 11.23 |
ДобавитьРасследования |
Tape & Reel (TR) | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 30A (Tc) | 15V | 90mOhm @ 20A, 15V | 4V @ 5mA | 51 nC @ 15 V | +15V, -4V | 1350 pF @ 1000 V | - | 113.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
| |
|
PC3M0060065L650V MOSFET |
2728 | 11.41 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | - | SiCFET (Silicon Carbide) | 650 V | 38A | - | - | - | - | - | - | - | 126W | 150°C (TJ) | - |
|
Таблицы данных |
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P3M12080G7SICFET N-CH 1200V 32A TO-263-7 |
3143 | 11.90 |
ДобавитьРасследования |
Tape & Reel (TR) | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 32A | 15V | 96mOhm @ 20A, 15V | 2.2V @ 30mA (Typ) | - | +19V, -8V | - | - | 136W | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
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C3M0065100J-TRSICFET N-CH 1000V 35A TO263-7 |
3530 | 12.18 |
ДобавитьРасследования |
Tape & Reel (TR) | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35 nC @ 15 V | +15V, -4V | 660 pF @ 600 V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
AS1M080120PN-CHANNEL SILICON CARBIDE POWER |
2220 | 12.54 |
ДобавитьРасследования |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
| |
|
PC3M0045065L650V MOSFET |
2513 | 13.04 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | - | SiCFET (Silicon Carbide) | 650 V | 51A | - | - | - | - | - | - | - | 160W | 150°C (TJ) | - |
|
Таблицы данных |
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P3M06025K4SICFET N-CH 650V 97A TO247-4 |
3905 | 15.90 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 97A | 15V | 34mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | - | +20V, -8V | - | - | 326W | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
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P3M12040G7SICFET N-CH 1200V 69A TO-263-7 |
3985 | 20.98 |
ДобавитьРасследования |
Tape & Reel (TR) | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 69A | 15V | 53mOhm @ 40A, 15V | 2.2V @ 40mA (Typ) | - | +19V, -8V | - | - | 357W | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
P3M12040K4SICFET N-CH 1200V 63A TO-247-3 |
2209 | 20.98 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A | 15V | 48mOhm @ 40A, 15V | 2.2V @ 40mA (Typ) | - | +21V, -8V | - | - | 349W | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
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GPIHV30SB5LGANFET N-CH 1200V 30A TO263-5L |
3091 | 22.00 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | GaNFET (Gallium Nitride) | 1200 V | 30A | 6V | - | 1.4V @ 3.5mA | 8.25 nC @ 6 V | +7.5V, -12V | 236 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
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AS1M040120PN-CHANNEL SILICON CARBIDE POWER |
2829 | 22.54 |
ДобавитьРасследования |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
AS1M040120TN-CHANNEL SILICON CARBIDE POWER |
2872 | 22.56 |
ДобавитьРасследования |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
P3M12025K3SICFET N-CH 1200V 113A TO-247-3 |
3872 | 28.74 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 113A | 15V | 35mOhm @ 50A, 15V | 2.4V @ 17.7mA (Typ) | - | +21V, -10V | - | - | 524W | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
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P3M17040K3SICFET N-CH 1700V 73A TO-247-3 |
2743 | 35.86 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 73A | 15V | 60mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | - | +19V, -8V | - | - | 536W | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
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P3M12017K4SICFET N-CH 1200V 151A TO-247-4 |
2100 | 39.75 |
ДобавитьРасследования |
Tube | P3M | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 151A | 15V | 24mOhm @ 75A, 15V | 2.5V @ 75mA (Typ) | - | +25V, -10V | - | - | 789W | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
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AS1M025120PN-CHANNEL SILICON CARBIDE POWER |
2272 | 41.42 |
ДобавитьРасследования |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
AS1M025120TN-CHANNEL SILICON CARBIDE POWER |
3060 | 41.44 |
ДобавитьРасследования |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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IV1Q12050T4SIC MOSFET, 1200V 50MOHM, TO-247 |
2484 | 40.34 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 65mOhm @ 20A, 20V | 3.2V @ 6mA | 120 nC @ 20 V | +20V, -5V | 2750 pF @ 800 V | - | 344W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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