Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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EPC2015GANFET N-CH 40V 33A DIE OUTLINE |
3621 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | eGaN® | Discontinued at Mosen | N-Channel | GaNFET (Gallium Nitride) | 40 V | 33A (Ta) | 5V | 4mOhm @ 33A, 5V | 2.5V @ 9mA | 11.6 nC @ 5 V | +6V, -5V | 1200 pF @ 20 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK764R0-75C,118MOSFET N-CH 75V 100A D2PAK |
3972 | 2.23 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 100A (Tc) | 10V | 4mOhm @ 25A, 10V | 4V @ 1mA | 142 nC @ 10 V | ±20V | 11659 pF @ 25 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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EPC2016GANFET N-CH 100V 11A DIE |
2997 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | eGaN® | Discontinued at Mosen | N-Channel | GaNFET (Gallium Nitride) | 100 V | 11A (Ta) | 5V | 16mOhm @ 11A, 5V | 2.5V @ 3mA | 5.2 nC @ 5 V | +6V, -5V | 520 pF @ 50 V | - | - | -40°C ~ 125°C (TJ) | Surface Mount |
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Таблицы данных |
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STF38N65M5MOSFET N-CH 650V 30A TO220FP |
3067 | 0.00 |
ДобавитьРасследования |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 95mOhm @ 15A, 10V | 5V @ 250µA | 71 nC @ 10 V | ±25V | 3000 pF @ 100 V | - | 35W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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BUK7E2R6-60E,127MOSFET N-CH 60V 120A I2PAK |
2345 | 0.00 |
ДобавитьРасследования |
Bulk,Tube | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.6mOhm @ 25A, 10V | 4V @ 1mA | 158 nC @ 10 V | ±20V | 11180 pF @ 25 V | - | 349W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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GA08JT17-247TRANS SJT 1700V 8A TO247AB |
2525 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | - | SiC (Silicon Carbide Junction Transistor) | 1700 V | 8A (Tc) (90°C) | - | 250mOhm @ 8A | - | - | - | - | - | 48W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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STW24N60M2MOSFET N-CH 600V 18A TO247 |
3589 | 0.00 |
ДобавитьРасследования |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±25V | 1060 pF @ 100 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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2N7002E-T1-E3MOSFET N-CH 60V 240MA SOT23-3 |
2371 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240mA (Ta) | 4.5V, 10V | 3Ohm @ 250mA, 10V | 2.5V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 21 pF @ 5 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SCH2080KECSICFET N-CH 1200V 40A TO247 |
3087 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106 nC @ 18 V | +22V, -6V | 1850 pF @ 800 V | - | 262W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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EPC2018GANFET N-CH 150V 12A DIE |
2322 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | eGaN® | Discontinued at Mosen | N-Channel | GaNFET (Gallium Nitride) | 150 V | 12A (Ta) | 5V | 25mOhm @ 6A, 5V | 2.5V @ 3mA | 7.5 nC @ 5 V | +6V, -5V | 540 pF @ 100 V | - | - | -40°C ~ 125°C (TJ) | Surface Mount |
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Таблицы данных |
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SCT2160KECSICFET N-CH 1200V 22A TO247 |
2349 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 18V | 208mOhm @ 7A, 18V | 4V @ 2.5mA | 62 nC @ 18 V | +22V, -6V | 1200 pF @ 800 V | - | 165W (Tc) | 175°C (TJ) | Through Hole |
|
Таблицы данных |
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SCT2450KECSICFET N-CH 1200V 10A TO247 |
2779 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 18V | 585mOhm @ 3A, 18V | 4V @ 900µA | 27 nC @ 18 V | +22V, -6V | 463 pF @ 800 V | - | 85W (Tc) | 175°C (TJ) | Through Hole |
|
Таблицы данных |
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SCT2120AFCSICFET N-CH 650V 29A TO220AB |
2846 | 0.00 |
ДобавитьРасследования |
Tube | - | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 650 V | 29A (Tc) | 18V | 156mOhm @ 10A, 18V | 4V @ 3.3mA | 61 nC @ 18 V | +22V, -6V | 1200 pF @ 500 V | - | 165W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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STP2N95K5MOSFET N-CH 950V 2A TO220 |
3896 | 0.00 |
ДобавитьРасследования |
Tube | SuperMESH5™ | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 2A (Tc) | 10V | 5Ohm @ 1A, 10V | 5V @ 100µA | 10 nC @ 10 V | 30V | 105 pF @ 100 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW28N60M2MOSFET N-CH 600V 24A TO247 |
2940 | 0.00 |
ДобавитьРасследования |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 4V @ 250µA | 37 nC @ 10 V | ±25V | 1370 pF @ 100 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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STP24N60DM2MOSFET N-CH 600V 18A TO220 |
3012 | 0.00 |
ДобавитьРасследования |
Tube | FDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 200mOhm @ 9A, 10V | 5V @ 250µA | 29 nC @ 10 V | ±25V | 1055 pF @ 100 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW18N60M2MOSFET N-CH 600V 13A TO247 |
2241 | 0.00 |
ДобавитьРасследования |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 4V @ 250µA | 21.5 nC @ 10 V | ±25V | 791 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
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EPC2021ENGRTRANS GAN 80V 60A BUMPED DIE |
2170 | 0.00 |
ДобавитьРасследования |
Cut Tape (CT) | eGaN® | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 80 V | 60A (Ta) | 5V | 2.5mOhm @ 29A, 5V | 2.5V @ 14mA | 15 nC @ 5 V | +6V, -4V | 1700 pF @ 40 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STP130N6F7MOSFET N-CH 60V 80A TO220AB |
2128 | 0.00 |
ДобавитьРасследования |
Tube | STripFET™ F7 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 5mOhm @ 40A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
| |
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EPC2025GANFET N-CH 300V 4A DIE |
2127 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | eGaN® | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 300 V | 4A (Ta) | 5V | 150mOhm @ 3A, 5V | 2.5V @ 1mA | - | +6V, -4V | 194 pF @ 240 V | - | - | -40°C ~ 150°C (TJ) | Surface Mount |
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