Transistors - FETs, MOSFETs - Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	Series	ProductStatus	FETType	Technology	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	DriveVoltage(MaxRdsOnMinRdsOn)	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	Vgs(Max)	InputCapacitance(Ciss)(Max)@Vds	FETFeature	PowerDissipation(Max)	OperatingTemperature	MountingType
Таблицы данных	AUIRFP1405-203 AUIRFP1405 - 55V-60V N-CHANNEL A International Rectifier	3800	1.86	- + Добавить Расследования	Bulk	-	Obsolete	-	-	-	160A (Tc)	-	-	-	-	-	-	-	-	-	-
Таблицы данных	DI015N25D1 MOSFET, TO-252AA/D-PAK, 250V, 15 Diotec Semiconductor	2972	3.28	- + Добавить Расследования	Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	250 V	15A (Tc)	10V	255mOhm @ 15A, 10V	4.5V @ 250µA	8.9 nC @ 10 V	±20V	475 pF @ 125 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
	BSC0403NSATMA1 150V, N-CH MOSFET, LOGIC LEVEL Infineon Technologies	3459	0.00	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
Таблицы данных	PSMN5R0-100PS,127 NOW NEXPERIA PSMN5R0-100PS - 120 NXP Semiconductors	2381	0.00	- + Добавить Расследования	Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	5mOhm @ 25A, 10V	4V @ 1mA	170 nC @ 10 V	±20V	9900 pF @ 50 V	-	338W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
Таблицы данных	UMW STD35NF06L TO-252 MOSFETS ROHS UTD Semiconductor	3525	1.91	- + Добавить Расследования	Tape & Reel (TR)	UMW	Active	N-Channel	MOSFET (Metal Oxide)	60 V	35A (Tc)	4.5V, 10V	20mOhm @ 30A, 10V	4V @ 250µA	60 nC @ 10 V	±20V	1300 pF @ 25 V	-	105W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
Таблицы данных	IPA65R190E6 IPA65R190 - 650V AND 700V COOLMO Infineon Technologies	2482	0.00	- + Добавить Расследования	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
Таблицы данных	DI100N10PQ MOSFET, 100V, 100A, 250W Diotec Semiconductor	3836	3.48	- + Добавить Расследования	Tape & Reel (TR),Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	4.5V, 10V	5mOhm @ 30A, 10V	3V @ 250µA	64 nC @ 10 V	±20V	3742 pF @ 30 V	-	250W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
Таблицы данных	DIT100N10 MOSFET, TO-220AB, 100V, 100A, N Diotec Semiconductor	3735	0.00	- + Добавить Расследования	Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	10V	13mOhm @ 40A, 10V	4V @ 250µA	85 nC @ 10 V	±20V	4800 pF @ 50 V	-	200W (Tc)	-55°C ~ 175°C (TJ)
Таблицы данных	IRFF9133 AUTOMOTIVE HEXFET P-CHANNEL POWE International Rectifier	3165	0.00	- + Добавить Расследования	Bulk	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
Таблицы данных	IRFB3077PBF IRFB3077 - 12V-300V N-CHANNEL PO International Rectifier	2622	2.28	- + Добавить Расследования	Bulk	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	75 V	120A (Tc)	10V	3.3mOhm @ 75A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	9400 pF @ 50 V	-	370W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
Таблицы данных	FDP045N10AF102 120A, 100V, N-CHANNEL POWER MOSF Fairchild Semiconductor	3614	0.00	- + Добавить Расследования	Bulk	PowerTrench®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	120A (Tc)	10V	4.5mOhm @ 100A, 10V	4V @ 250µA	74 nC @ 10 V	±20V	5270 pF @ 50 V	-	263W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
Таблицы данных	AUIRFSL4115 MOSFET N-CH 150V 99A TO262 International Rectifier	2204	2.45	- + Добавить Расследования	Bulk	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	99A (Tc)	10V	12.1mOhm @ 62A, 10V	5V @ 250µA	120 nC @ 10 V	±20V	5270 pF @ 50 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
Таблицы данных	AUIRLS4030-7TRL MOSFET N-CH 100V 190A D2PAK International Rectifier	2178	0.00	- + Добавить Расследования	Bulk	Automotive, AEC-Q101, HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	190A (Tc)	4.5V, 10V	3.9mOhm @ 110A, 10V	2.5V @ 250µA	140 nC @ 4.5 V	±16V	11490 pF @ 50 V	-	370W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
Таблицы данных	AUIRLS8409-7P AUIRLS8409 - 20V-40V N-CHANNEL A Infineon Technologies	2279	0.00	- + Добавить Расследования	Bulk	Automotive, AEC-Q101, HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	240A (Tc)	4.5V, 10V	0.75mOhm @ 100A, 10V	2.4V @ 250µA	266 nC @ 4.5 V	±16V	16488 pF @ 25 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
Таблицы данных	IPB073N15N5ATMA1 TRENCH >=100V Infineon Technologies	2860	0.00	- + Добавить Расследования	Bulk	OptiMOS™-5	Active	N-Channel	MOSFET (Metal Oxide)	150 V	114A (Tc)	8V, 10V	7.3mOhm @ 57A, 10V	4.6V @ 160µA	61 nC @ 10 V	±20V	4700 pF @ 75 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
Таблицы данных	FCH110N65F-F155 MOSFET N-CH 650V 35A TO247 Fairchild Semiconductor	3463	0.00	- + Добавить Расследования	Bulk	FRFET®, SuperFET® II	Active	N-Channel	MOSFET (Metal Oxide)	650 V	35A (Tc)	10V	110mOhm @ 17.5A, 10V	5V @ 3.5mA	145 nC @ 10 V	±20V	4895 pF @ 100 V	-	357W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
Таблицы данных	AUIRLS3036-7P MOSFET N-CH 60V 240A D2PAK International Rectifier	2734	2.91	- + Добавить Расследования	Bulk	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	60 V	240A (Tc)	4.5V, 10V	1.9mOhm @ 180A, 10V	2.5V @ 250µA	160 nC @ 4.5 V	±16V	11270 pF @ 50 V	-	380W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
Таблицы данных	FDB0300N1007L MOSFET N-CH 100V 200A TO263-7 Fairchild Semiconductor	3280	3.21	- + Добавить Расследования	Bulk	PowerTrench®	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200A (Tc)	6V, 10V	3mOhm @ 26A, 10V	4V @ 250µA	113 nC @ 10 V	±20V	8295 pF @ 50 V	-	3.8W (Ta), 250W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
	RJL5013DPP-E0#T2 RJL5013DPP - N CHANNEL MOSFET Renesas	2198	0.00	- + Добавить Расследования	Bulk	-	Obsolete	N-Channel	MOSFET (Metal Oxide)	500 V	14A (Ta)	10V	510mOhm @ 7A, 10V	4V @ 1mA	37.6 nC @ 10 V	±30V	1400 pF @ 25 V	-	30W (Tc)	150°C	Through Hole
Таблицы данных	FDA50N50 POWER FIELD-EFFECT TRANSISTOR, 4 onsemi	3152	0.00	- + Добавить Расследования	Bulk	UniFET™	Active	N-Channel	MOSFET (Metal Oxide)	500 V	48A (Tc)	10V	105mOhm @ 24A, 10V	5V @ 250µA	137 nC @ 10 V	±20V	6460 pF @ 25 V	-	625W (Tc)	-55°C ~ 150°C (TJ)	Through Hole

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