Transistors - FETs, MOSFETs - Single,Discrete Semiconductor Products

Таблицы данных	Производитель. Часть #	Акции	Цены	А	Packaging	Series	ProductStatus	FETType	Technology	DraintoSourceVoltage(Vdss)	Current-ContinuousDrain(Id)@25°C	DriveVoltage(MaxRdsOnMinRdsOn)	RdsOn(Max)@IdVgs	Vgs(th)(Max)@Id	GateCharge(Qg)(Max)@Vgs	Vgs(Max)	InputCapacitance(Ciss)(Max)@Vds	FETFeature	PowerDissipation(Max)	OperatingTemperature	MountingType
Таблицы данных	FDMT800152DC MOSFET N-CH 150V 13A/72A 8DLCOOL Fairchild Semiconductor	3167	3.50	- + Добавить Расследования	Bulk	Dual Cool™, PowerTrench®	Active	N-Channel	MOSFET (Metal Oxide)	150 V	13A (Ta), 72A (Tc)	6V, 10V	9mOhm @ 13A, 10V	4V @ 250µA	83 nC @ 10 V	±20V	5875 pF @ 75 V	-	3.2W (Ta), 113W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
Таблицы данных	FCH077N65F-F155 MOSFET N-CH 650V 54A TO247 Fairchild Semiconductor	2376	0.00	- + Добавить Расследования	Bulk	FRFET®, SuperFET® II	Active	N-Channel	MOSFET (Metal Oxide)	650 V	54A (Tc)	10V	77mOhm @ 27A, 10V	5V @ 5.4mA	164 nC @ 10 V	±20V	7109 pF @ 100 V	-	481W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
Таблицы данных	BSC0802LSATMA1 MOSFET N-CH 100V 20A/100A TDSON Infineon Technologies	2381	3.76	- + Добавить Расследования	Cut Tape (CT),Digi-Reel®	OptiMOS™ 5	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100 V	20A (Ta), 100A (Tc)	4.5V, 10V	3.4mOhm @ 50A, 10V	2.3V @ 115µA	46 nC @ 4.5 V	±20V	6500 pF @ 50 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
Таблицы данных	FDA8440 MOSFET N-CH 40V 30A/100A TO3PN Fairchild Semiconductor	2775	3.98	- + Добавить Расследования	Bulk	PowerTrench®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	30A (Ta), 100A (Tc)	4.5V, 10V	2.1mOhm @ 80A, 10V	3V @ 250µA	450 nC @ 10 V	±20V	24740 pF @ 25 V	-	306W (Tc)	-55°C ~ 175°C (TJ)	Through Hole
Таблицы данных	DI080N06PQ-AQ MOSFET, 65V, 80A, N, 80W Diotec Semiconductor	2734	4.05	- + Добавить Расследования	Tape & Reel (TR),Tape & Reel (TR)	Automotive, AEC-Q101	Active	N-Channel	MOSFET (Metal Oxide)	65 V	80A (Tc)	4.5V, 10V	4mOhm @ 30A, 10V	3V @ 250µA	56 nC @ 10 V	±20V	4128 pF @ 30 V	-	80W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
Таблицы данных	DIT085N10 MOSFET, 100V, 85A, N, 61.9W Diotec Semiconductor	3343	4.44	- + Добавить Расследования	Tube,Tube	-	Active	N-Channel	MOSFET (Metal Oxide)	100 V	85A (Tc)	4.5V, 10V	4.8mOhm @ 50A, 10V	2.4V @ 250µA	75 nC @ 10 V	±20V	3742 pF @ 50 V	-	62.5W (Tc)	-55°C ~ 150°C (TJ)	Through Hole
Таблицы данных	AS3D020065A 650V,20A SILICON CARBIDE SCHOTTK ANBON SEMICONDUCTOR (INT'L) LIMITED	2512	4.83	- + Добавить Расследования	Tube	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
Таблицы данных	P3M06300K3 SICFET N-CH 650V 9A TO-247-3 PN Junction Semiconductor	2095	4.98	- + Добавить Расследования	Tube	P3M	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	9A	15V	500mOhm @ 4.5A, 15V	2.2V @ 5mA (Typ)	904 nC @ 15 V	+20V, -8V	338 pF @ 400 V	-	38W	-55°C ~ 175°C (TJ)	Through Hole
Таблицы данных	P1H06300D8 GANFET N-CH 650V 10A DFN 8X8 PN Junction Semiconductor	2534	4.98	- + Добавить Расследования	Tape & Reel (TR)	-	Active	N-Channel	GaNFET (Gallium Nitride)	650 V	10A	6V	1.3V @ 1mA	-	-	+10V, -20V	-	-	55.5W	-55°C ~ 150°C (TJ)	Surface Mount
Таблицы данных	P3M173K0F3 SICFET N-CH 1700V 1.97A TO-220F- PN Junction Semiconductor	3131	5.08	- + Добавить Расследования	Tube	P3M	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	1.97A	15V	3.6Ohm @ 0.25A, 15V	2.2V @ 1.5mA (Typ)	-	+19V, -8V	-	-	19W	-55°C ~ 175°C (TJ)	Through Hole
	X3M0120065L 650V MOSFET Wolfspeed, Inc.	2055	5.34	- + Добавить Расследования	Tape & Reel (TR)	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
Таблицы данных	P3M171K0F3 SICFET N-CH 1700V 5.5A TO-220F-3 PN Junction Semiconductor	2880	6.10	- + Добавить Расследования	Tube	P3M	Active	N-Channel	SiCFET (Silicon Carbide)	1700 V	5.5A	15V	1.4Ohm @ 2A, 15V	2.2V @ 2mA (Typ)	-	+19V, -8V	-	-	51W	-55°C ~ 175°C (TJ)	Through Hole
Таблицы данных	IPT65R105G7XTMA1 MOSFET N-CH 650V 24A 8HSOF Infineon Technologies	2911	6.68	- + Добавить Расследования	Tape & Reel (TR),Cut Tape (CT),Digi-Reel®	CoolMOS™ C7	Obsolete	N-Channel	MOSFET (Metal Oxide)	650 V	24A (Tc)	10V	105mOhm @ 8.9A, 10V	4V @ 440µA	35 nC @ 10 V	±20V	1670 pF @ 400 V	-	156W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount
Таблицы данных	AS3D020120C 1200V,20A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED	2238	6.80	- + Добавить Расследования	Tube	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
Таблицы данных	DIT195N08 MOSFET, TO-220AB, 85V, 195A, N Diotec Semiconductor	2549	0.00	- + Добавить Расследования	Bulk	-	Active	N-Channel	MOSFET (Metal Oxide)	85 V	195A (Tc)	10V	4.95mOhm @ 40A, 10V	4V @ 250µA	140 nC @ 10 V	±20V	16880 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)
Таблицы данных	AS3D030065C 650V,30A SILICON CARBIDE SCHOTTK ANBON SEMICONDUCTOR (INT'L) LIMITED	2031	7.58	- + Добавить Расследования	Tube	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-
Таблицы данных	AUIRF7739L2TR MOSFET N-CH 40V 46A/270A DIRECT International Rectifier	2507	0.00	- + Добавить Расследования	Bulk	HEXFET®	Active	N-Channel	MOSFET (Metal Oxide)	40 V	46A (Ta), 270A (Tc)	10V	1mOhm @ 160A, 10V	4V @ 250µA	330 nC @ 10 V	±20V	11880 pF @ 25 V	-	3.8W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount
Таблицы данных	P3M12160K3 SICFET N-CH 1200V 19A TO-247-3 PN Junction Semiconductor	2066	8.83	- + Добавить Расследования	Tube	P3M	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	19A	15V	192mOhm @ 10A, 15V	2.4V @ 2.5mA (Typ)	-	+21V, -8V	-	-	110W	-55°C ~ 175°C (TJ)	Through Hole
Таблицы данных	P3M06120T3 SICFET N-CH 650V 29A TO-220-3 PN Junction Semiconductor	2658	9.05	- + Добавить Расследования	Tube	P3M	Active	N-Channel	SiCFET (Silicon Carbide)	650 V	29A	15V	158mOhm @ 10A, 15V	2.2V @ 5mA (Typ)	-	+20V, -8V	-	-	153W	-55°C ~ 175°C (TJ)	Through Hole
Таблицы данных	AS3D030120P2 1200V,30A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED	2444	9.65	- + Добавить Расследования	Tube	*	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-

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