Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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![]() Таблицы данных |
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DI040P04PT-AQMOSFET, -40V, -40A, P, 22.7W |
3876 | 1.61 |
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Tape & Reel (TR),Tape & Reel (TR) | Automotive, AEC-Q101 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Tc) | 4.5V, 10V | 15mOhm @ 10A, 10V | 2.5V @ 250µA | 59 nC @ 10 V | ±20V | 3538 pF @ 20 V | - | 22.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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G65P06FP-CH, -60V, 65A, RD(MAX)<18M@-10 |
2282 | 1.62 |
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Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 10V | 18mOhm @ 20A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 6477 pF @ 25 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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DI110N04PQMOSFET, 40V, 110A, 42W |
3498 | 1.70 |
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Tape & Reel (TR),Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 4.5V, 10V | 2.5mOhm @ 23A, 10V | 2.5V @ 250µA | 48 nC @ 10 V | ±20V | 2980 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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G65P06TP-60V,RD(MAX)<18M@-10V,VTH-2.0V~ |
3630 | 1.71 |
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Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 10V | 18mOhm @ 20A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 5814 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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G110N06TN60V,RD(MAX)<6.4M@10V,RD(MAX)<8. |
100 | 1.74 |
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Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 4.5V, 10V | 6.4mOhm @ 20A, 10V | 2.5V @ 250µA | 113 nC @ 10 V | ±20V | 5538 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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HUF76439S3STPOWER FIELD-EFFECT TRANSISTOR, 7 |
3864 | 0.00 |
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Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 4.5V, 10V | 12mOhm @ 75A, 10V | 3V @ 250µA | 84 nC @ 10 V | ±16V | 2745 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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DI110N04PQ-AQMOSFET, 40V, 110A, 42W |
2827 | 1.79 |
ДобавитьРасследования |
Tape & Reel (TR),Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 110A (Tc) | 4.5V, 10V | 2.5mOhm @ 23A, 10V | 2.5V @ 250µA | 48 nC @ 10 V | ±20V | 2980 pF @ 25 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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FCPF260N60EPOWER FIELD-EFFECT TRANSISTOR, N |
2541 | 1.21 |
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Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 260mOhm @ 7.5A, 10V | 3.5V @ 250µA | 62 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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BUK6C2R1-55C,118NEXPERIA BUK6C2R1-55C - 228A, 55 |
2225 | 1.25 |
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Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 228A (Tc) | 10V | 2.3mOhm @ 90A, 10V | 2.8V @ 1mA | 253 nC @ 10 V | ±16V | 16000 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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DI080N03PQMOSFET, 30V, 80A, 78W |
3502 | 2.27 |
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Tape & Reel (TR),Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 1.9mOhm @ 20A, 10V | 2.3V @ 250µA | 21 nC @ 4.5 V | ±20V | 7460 pF @ 30 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IRFH4210DTRPBFMOSFET N-CH 25V 44A PQFN |
2239 | 2.46 |
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 25 V | 44A (Ta) | 4.5V, 10V | 1.1mOhm @ 50A, 10V | 2.1V @ 100µA | 77 nC @ 10 V | ±20V | 4812 pF @ 13 V | - | 3.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPP60R280C6XKSA1IPP60R280 - 600V COOLMOS N-CHANN |
2836 | 0.00 |
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Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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BUK9606-75B,118NEXPERIA BUK9606-75B - 75A, 75V |
3672 | 0.00 |
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Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 5V, 10V | 5.5mOhm @ 25A, 10V | 2V @ 1mA | 95 nC @ 5 V | ±15V | 11693 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | |
![]() Таблицы данных |
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FQPF47P06YDTUMOSFET P-CH 60V 30A TO220F-3 |
3851 | 1.39 |
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Bulk | QFET® | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 26mOhm @ 15A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±25V | 3600 pF @ 25 V | - | 62W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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GPI65005DFGANFET N-CH 650V 5A DFN 5X6 |
3765 | 2.50 |
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Tape & Reel (TR) | - | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 5A | 6V | - | 1.4V @ 1.75mA | 2.6 nC @ 6 V | +7.5V, -12V | 45 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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AUIRF1404ZLMOSFET N-CH 40V 160A TO262 |
2240 | 1.46 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 4340 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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BUZ50ATO 220 HV N-CHANNEL MOSFET |
2768 | 2.60 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Through Hole |
![]() Таблицы данных |
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UMW STD20NF06LTO-252 MOSFETS ROHS |
3647 | 1.50 |
ДобавитьРасследования |
Tape & Reel (TR) | UMW | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 4.5V, 10V | 35mOhm @ 15A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 1562 pF @ 25 V | - | 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IPB200N15N3GIPB200N15 - 12V-300V N-CHANNEL P |
3515 | 0.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() Таблицы данных |
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IRF24316A, 150V, 0.22OHM, N-CHANNEL PO |
2635 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |