Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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AUIRFR48ZMOSFET N-CH 55V 42A DPAK |
3287 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 50µA | 60 nC @ 10 V | ±20V | 1720 pF @ 25 V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFR4105ZTRLAUTOMOTIVE HEXFET N-CHANNEL POWE |
2541 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 740 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFR4105ZMOSFET N-CH 55V 20A DPAK |
2842 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | 10V | 24.5mOhm @ 18A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 740 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFSL8409MOSFET N-CH 40V 195A TO262 |
2587 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 450 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPS65R1K4C6MOSFET N-CH 650V 3.2A TO251-3 |
2411 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ C6 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.2A (Tc) | - | 1.4Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRFR4620TRLMOSFET N-CH 200V 24A DPAK |
2293 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 78mOhm @ 15A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±20V | 1710 pF @ 50 V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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HUF75645P3POWER FIELD-EFFECT TRANSISTOR, 7 |
2231 | 1.00 |
ДобавитьРасследования |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 75A (Tc) | 10V | 14mOhm @ 75A, 10V | 4V @ 250µA | 238 nC @ 20 V | ±20V | 3790 pF @ 25 V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRFS4115TRLMOSFET N-CH 150V 99A D2PAK |
2276 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 99A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5270 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDG316PSMALL SIGNAL FIELD-EFFECT TRANSI |
2686 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.6A (Ta) | 4.5V, 10V | 190mOhm @ 1.6A, 10V | 3V @ 250µA | 5 nC @ 10 V | ±20V | 165 pF @ 15 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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PMV33UPE,215PMV33UPE - 20 V, SINGLE P-CHANNE |
2603 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.4A (Ta) | 1.8V, 4.5V | 36mOhm @ 3A, 4.5V | 950mV @ 250µA | 22.1 nC @ 4.5 V | ±8V | 1820 pF @ 10 V | - | 490mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPD50N04S4-08IPD50N04 - 20V-40V N-CHANNEL AUT |
2958 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDS2572POWER FIELD-EFFECT TRANSISTOR, 4 |
2981 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 4.9A (Tc) | 10V | 47mOhm @ 4.9A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 2870 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RFP40N10_F10240A, 100V, 0.04OHM, N-CHANNEL PO |
2030 | 0.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 40A (Tc) | 10V | 40mOhm @ 40A, 10V | 4V @ 250µA | 300 nC @ 20 V | ±20V | - | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BUK766R0-60E,118MOSFET N-CH 60V 75A D2PAK |
3208 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 6mOhm @ 25A, 10V | 4V @ 1mA | 62 nC @ 10 V | ±20V | 4520 pF @ 25 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTD24N06LT4GPOWER FIELD-EFFECT TRANSISTOR, 2 |
3949 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Ta) | 5V | 45mOhm @ 10A, 5V | 2V @ 250µA | 32 nC @ 5 V | ±15V | 1140 pF @ 25 V | - | 1.36W (Ta), 62.5W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK7Y18-55B,115NOW NEXPERIA BUK7Y18-55B - 47.4A |
2122 | 0.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 47.4A (Tc) | 10V | 18mOhm @ 20A, 10V | 4V @ 1mA | 21.9 nC @ 10 V | ±20V | 1263 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK7Y65-100EXTRANSISTOR >30MHZ |
2762 | 1.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Tc) | 10V | 65mOhm @ 5A, 10V | 4V @ 1mA | 17.8 nC @ 10 V | ±20V | 1023 pF @ 25 V | - | 64W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDV302PSMALL SIGNAL FIELD-EFFECT TRANSI |
3445 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 25 V | 120mA (Ta) | 2.7V, 4.5V | 10Ohm @ 200mA, 4.5V | 1.5V @ 250µA | 0.31 nC @ 4.5 V | -8V | 11000 pF @ 10 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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2SJ463A-T1-A2SJ463A - P-CHANNEL MOSFET |
2940 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRLH6224TRPBFMOSFET N-CH 20V 28A/105A 8PQFN |
2363 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 28A (Ta), 105A (Tc) | 2.5V, 4.5V | 3mOhm @ 20A, 4.5V | 1.1V @ 50µA | 86 nC @ 10 V | ±12V | 3710 pF @ 10 V | - | 3.6W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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