Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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BUK762R6-60E,118MOSFET N-CH 60V 120A D2PAK |
3204 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.6mOhm @ 25A, 10V | 4V @ 1mA | 140 nC @ 10 V | ±20V | 10170 pF @ 25 V | - | 324W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR3910TRPBFIRFR3910 - 12V-300V N-CHANNEL PO |
3128 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Tc) | 10V | 115mOhm @ 10A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMA710PZSMALL SIGNAL FIELD-EFFECT TRANSI |
2028 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 7.8A (Ta) | 1.8V, 5V | 24mOhm @ 7.8A, 5V | 1.5V @ 250µA | 42 nC @ 5 V | ±8V | 2015 pF @ 10 V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS5690SMALL SIGNAL FIELD-EFFECT TRANSI |
2755 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 7A (Ta) | 6V, 10V | 28mOhm @ 7A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 1107 pF @ 30 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPD90N06S4L-05IPD90N06 - 55V-60V N-CHANNEL AUT |
3691 | 1.00 |
ДобавитьРасследования |
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 4.6mOhm @ 90A, 10V | 2.2V @ 60µA | 110 nC @ 10 V | ±16V | 8180 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCD3400N80ZPOWER FIELD-EFFECT TRANSISTOR, N |
2191 | 1.00 |
ДобавитьРасследования |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 4.5V @ 200µA | 9.6 nC @ 10 V | ±20V | 400 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FCD620N60ZFPOWER FIELD-EFFECT TRANSISTOR, 7 |
3882 | 1.00 |
ДобавитьРасследования |
Bulk | HiPerFET™, Polar™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 620mOhm @ 3.6A, 10V | 5V @ 250µA | 36 nC @ 10 V | ±20V | 1135 pF @ 25 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS6682SMALL SIGNAL FIELD-EFFECT TRANSI |
2835 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 7.5mOhm @ 14A, 10V | 3V @ 250µA | 31 nC @ 5 V | ±20V | 2310 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS7682POWER FIELD-EFFECT TRANSISTOR, 1 |
2531 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta), 22A (Tc) | 4.5V, 10V | 6.3mOhm @ 14A, 10V | 3V @ 250µA | 30 nC @ 10 V | ±20V | 1885 pF @ 15 V | - | 2.5W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDN338PSMALL SIGNAL FIELD-EFFECT TRANSI |
2149 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.6A (Ta) | 2.5V, 4.5V | 115mOhm @ 1.6A, 4.5V | 1.5V @ 250µA | 6.2 nC @ 4.5 V | ±8V | 451 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF221N-CHANNEL HERMETIC MOS HEXFET |
3154 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IRL3803VPBFIRL3803 - 12V-300V N-CHANNEL POW |
3323 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 5.5mOhm @ 71A, 10V | 1V @ 250µA | 76 nC @ 4.5 V | ±16V | 3720 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BUK9E04-40A,127MOSFET N-CH 40V 75A I2PAK |
3153 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 4.3V, 10V | 4mOhm @ 25A, 10V | 2V @ 1mA | 128 nC @ 5 V | ±15V | 8260 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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FDN352APSMALL SIGNAL FIELD-EFFECT TRANSI |
3797 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.3A (Ta) | 4.5V, 10V | 180mOhm @ 1.3A, 10V | 2.5V @ 250µA | 1.9 nC @ 4.5 V | ±25V | 150 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRF2804SMOSFET N-CH 40V 195A D2PAK |
3524 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP50R399CPIPP50R399 - 500V COOLMOS N-CHANN |
2228 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDN340PSMALL SIGNAL FIELD-EFFECT TRANSI |
2571 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 2.5V, 4.5V | 70mOhm @ 2A, 4.5V | 1.5V @ 250µA | 10 nC @ 4.5 V | ±8V | 779 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPP60R180C713A, 600V, 0.18OHM, N-CHANNEL MO |
2168 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 180mOhm @ 5.3A, 10V | 4V @ 260µA | 24 nC @ 10 V | ±20V | 1080 pF @ 400 V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW60R190P6MOSFET N-CH 600V 20.2A TO247 |
3129 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ P6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | - | 190mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37 nC @ 10 V | ±20V | 1750 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF3704ZSPBFMOSFET N-CH 20V 67A D2PAK |
3140 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 67A (Tc) | 4.5V, 10V | 7.9mOhm @ 21A, 10V | 2.55V @ 250µA | 13 nC @ 4.5 V | ±20V | 1220 pF @ 10 V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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