Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU4510PBF

Таблицы данных

IRFU4510PBF

IRFU4510PBF

MOSFET N-CH 100V 56A IPAK

International Rectifier

2153 0.00
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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 13.9mOhm @ 38A, 10V 4V @ 100µA 81 nC @ 10 V ±20V 3031 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLR2905

Таблицы данных

AUIRLR2905

AUIRLR2905

AUIRLR2905 - 55V-60V N-CHANNEL A

Infineon Technologies

3075 0.00
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Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK762R0-40C,118

Таблицы данных

BUK762R0-40C,118

BUK762R0-40C,118

NEXPERIA BUK762 - N-CHANNEL MOSF

NXP Semiconductors

2915 0.85
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Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2mOhm @ 25A, 10V 4V @ 1mA 175 nC @ 10 V ±20V 11323 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UMW 30N06

Таблицы данных

UMW 30N06

UMW 30N06

60V 25A 30MR@10V,15A 34.7W 2.5V@

UTD Semiconductor

3349 0.86
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Tape & Reel (TR) UMW Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 29mOhm @ 15A, 10V 2.5V @ 250µA 25 nC @ 10 V ±20V 1562 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7606-55B,118

Таблицы данных

BUK7606-55B,118

BUK7606-55B,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.

2003 0.87
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Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6mOhm @ 25A, 10V 4V @ 1mA 64 nC @ 10 V ±20V 5100 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP17P06

Таблицы данных

FQP17P06

FQP17P06

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

3967 0.00
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Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 120mOhm @ 8.5A, 10V 4V @ 250µA 27 nC @ 10 V ±25V 900 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQB19N20TM

Таблицы данных

FQB19N20TM

FQB19N20TM

MOSFET N-CH 200V 19.4A D2PAK

Fairchild Semiconductor

3828 0.00
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Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 19.4A (Tc) 10V 150mOhm @ 9.7A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW60R160P6

Таблицы данных

IPW60R160P6

IPW60R160P6

POWER FIELD-EFFECT TRANSISTOR

Infineon Technologies

3237 1.00
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Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R095C7 IPW65R095C7

IPW65R095C7

MOSFET N-CH 650V 24A TO247

Infineon Technologies

2699 1.00
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Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) - 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP125N60E

Таблицы данных

FCP125N60E

FCP125N60E

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor

3787 1.00
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Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 250µA 95 nC @ 10 V ±20V 2990 pF @ 380 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD16AN08A0

Таблицы данных

FDD16AN08A0

FDD16AN08A0

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor

2836 1.00
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Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 9A (Ta), 50A (Tc) 6V, 10V 16mOhm @ 50A, 10V 4V @ 250µA 47 nC @ 10 V ±20V 1874 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76633P3-F085

Таблицы данных

HUF76633P3-F085

HUF76633P3-F085

MOSFET N-CH 100V 39A TO220-3

Fairchild Semiconductor

2821 0.93
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Bulk Automotive, AEC-Q101, UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 39A (Tc) 4.5V, 10V 35mOhm @ 39A, 10V 3V @ 250µA 67 nC @ 10 V ±16V 1820 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
GT060N04T GT060N04T

GT060N04T

MOSFET, N-CH, 40V,60A,TO-220

Goford Semiconductor

3595 0.94
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Tube * Active - - - - - - - - - - - - - -
FDMS86252L FDMS86252L

FDMS86252L

FDMS86252 - N-CHANNEL SHIELDED G

Fairchild Semiconductor

3514 0.00
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Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 4.4A (Ta), 12A (Tc) 4.5V, 10V 56mOhm @ 4.4A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 1335 pF @ 75 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UMW 100N03A

Таблицы данных

UMW 100N03A

UMW 100N03A

TO-252 MOSFETS ROHS

UTD Semiconductor

2785 0.96
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Tape & Reel (TR) UMW Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 4.9mOhm @ 30A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 1963 pF @ 15 V - 105W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB42AN15A0-F085

Таблицы данных

FDB42AN15A0-F085

FDB42AN15A0-F085

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor

3385 0.00
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Bulk Automotive, AEC-Q101, PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 10V 42mOhm @ 12A, 10V 4V @ 250µA 36 nC @ 10 V ±20V 2040 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF9540N

Таблицы данных

AUIRF9540N

AUIRF9540N

AUIRF9540 - 20V-150V P-CHANNEL A

Infineon Technologies

2566 0.96
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Bulk Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 11A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 1300 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC0704LSATMA1

Таблицы данных

BSC0704LSATMA1

BSC0704LSATMA1

MOSFET N-CH 60V 11A/47A TDSON

Infineon Technologies

2677 0.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta), 47A (Tc) 4.5V, 10V 9.4mOhm @ 24A, 10V 2.3V @ 14µA 9.4 nC @ 4.5 V ±20V 1300 pF @ 30 V - 2.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ0909LSATMA1

Таблицы данных

BSZ0909LSATMA1

BSZ0909LSATMA1

MOSFET N-CH 30V 19A/40A TSDSON

Infineon Technologies

3687 0.00
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 40A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V 2V @ 250µA 26 nC @ 10 V ±20V 1700 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
UMW 40N06

Таблицы данных

UMW 40N06

UMW 40N06

TO-252 MOSFETS ROHS

UTD Semiconductor

2405 0.98
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Tape & Reel (TR) UMW Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 18mOhm @ 30A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2928 pF @ 25 V - 105W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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