Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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BUK969R3-100E,118MOSFET N-CH 100V 100A D2PAK |
2962 | 0.98 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 5V, 10V | 8.9mOhm @ 25A, 10V | 2.1V @ 1mA | 94.3 nC @ 5 V | ±10V | 11650 pF @ 25 V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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G45P40TMOSFET, P-CH, 40V,45A,TO-220 |
3595 | 0.98 |
ДобавитьРасследования |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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G300P06TMOSFET, P-CH, 60V,40A,TO-220 |
3088 | 0.98 |
ДобавитьРасследования |
Tube | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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UMW 50N06TO-252 MOSFETS ROHS |
2655 | 0.98 |
ДобавитьРасследования |
Tape & Reel (TR) | UMW | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 17mOhm @ 30A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 2928 pF @ 25 V | - | 105W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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UMW 15N10100V 15A 50W 80MR@10V,10A 2.5V@2 |
2011 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR) | UMW | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 4.5V, 10V | 110mOhm @ 10A, 10V | 3V @ 250µA | 19.2 nC @ 10 V | ±20V | 632 pF @ 50 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRF7207QMOSFET P-CH 20V 5.4A 8SO |
2091 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.4A (Ta) | 2.7V, 4.5V | 60mOhm @ 5.4A, 4.5V | 1.6V @ 250µA | 22 nC @ 4.5 V | ±12V | 780 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFR3806MOSFET N-CH 60V 43A DPAK |
2421 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30 nC @ 10 V | ±20V | 1150 pF @ 50 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFS8409TRLMOSFET N-CH 40V 195A D2PAK |
3832 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.2mOhm @ 100A, 10V | 3.9V @ 250µA | 450 nC @ 10 V | ±20V | 14240 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCH150N65F-F155POWER FIELD-EFFECT TRANSISTOR, N |
3899 | 1.00 |
ДобавитьРасследования |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 2.4mA | 94 nC @ 10 V | ±20V | 3737 pF @ 100 V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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AUIRFR024NTRLMOSFET N-CH 55V 17A TO252AA |
3998 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 17A (Tc) | - | 75mOhm @ 10A, 10V | 4V @ 250µA | 20 nC @ 10 V | - | 370 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FCPF380N60EPOWER FIELD-EFFECT TRANSISTOR, N |
2293 | 1.00 |
ДобавитьРасследования |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.2A (Tc) | 10V | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 45 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCPF650N80ZPOWER FIELD-EFFECT TRANSISTOR, N |
3472 | 1.00 |
ДобавитьРасследования |
Bulk | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 650mOhm @ 4A, 10V | 4.5V @ 800µA | 35 nC @ 10 V | ±20V | 1565 pF @ 100 V | - | 30.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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BSC016N03MSGBSC016N03 - 12V-300V N-CHANNEL P |
2479 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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BSZ12DN20NS3GBSZ12DN20 - 12V-300V N-CHANNEL P |
3981 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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FDN357NSMALL SIGNAL FIELD-EFFECT TRANSI |
2465 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.9A (Ta) | 4.5V, 10V | 60mOhm @ 2.2A, 10V | 2V @ 250µA | 5.9 nC @ 5 V | ±20V | 235 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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2N7000SMALL SIGNAL FIELD-EFFECT TRANSI |
2384 | 1.00 |
ДобавитьРасследования |
Bulk | STripFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 350mA (Tc) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 3V @ 250µA | 2 nC @ 5 V | ±18V | 43 pF @ 25 V | - | 350mW (Ta) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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2N7002PS115NOW NEXPERIA 2N7002PS - SMALL SI |
2525 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPD50N06S2-14IPD50N06 - 55V-60V N-CHANNEL AUT |
3473 | 1.00 |
ДобавитьРасследования |
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 50A (Tc) | 10V | 14.4mOhm @ 32A, 10V | 4V @ 80µA | 52 nC @ 10 V | ±20V | 1485 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK7Y9R9-80EXTRANSISTOR >30MHZ |
3789 | 1.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 89A (Tc) | 10V | 98mOhm @ 5A, 10V | 4V @ 1mA | 51.6 nC @ 10 V | ±20V | 498 pF @ 25 V | - | 195W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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CPH3442-TL-EMOSFET N-CH 30V 6.5A 3CPH |
2528 | 1.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.5A (Ta) | - | 24mOhm @ 3A, 4V | - | 16.1 nC @ 4 V | - | 1295 pF @ 10 V | - | 1.2W (Ta) | 150°C (TJ) | Surface Mount |
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