Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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Таблицы данных |
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1IRF3710PBFIRF3710 - 100V HEXFET N-CHANNEL |
3272 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRFS8408-7TRLMOSFET N-CH 40V 240A D2PAK |
2778 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 240A (Tc) | 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315 nC @ 10 V | ±20V | 10250 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BSS214NWH6327BSS214 - 250V-600V SMALL SIGNAL |
2071 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRFB3207MOSFET N-CH 75V 75A TO220AB |
2021 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 7600 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRFSL8407MOSFET N-CH 40V 195A TO262 |
3894 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 2mOhm @ 100A, 10V | 4V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRLS4030TRLMOSFET N-CH 100V 180A D2PAK |
3406 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | 2.5V @ 250µA | 130 nC @ 4.5 V | ±16V | 11360 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BSC042N03LSGBSC042N03 - 12V-300V N-CHANNEL P |
3349 | 0.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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AUIRF1010EZSMOSFET N-CH 60V 75A D2PAK |
2527 | 1.00 |
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Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±20V | 2810 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF92316.5A, 150V, 0.8OHM, P-CHANNEL PO |
2587 | 1.00 |
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Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IPW60R099CPMOSFET N-CH 600V 31A TO247-3-1 |
3355 | 1.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | - | 99mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80 nC @ 10 V | ±20V | 2800 pF @ 100 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDB024N06POWER FIELD-EFFECT TRANSISTOR, 1 |
3015 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.4mOhm @ 75A, 10V | 4.5V @ 250µA | 226 nC @ 10 V | ±20V | 14885 pF @ 25 V | - | 395W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK961R6-40E,118120A, 40V, 0.0016OHM, N-CHANNEL |
3007 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 5V | 1.4mOhm @ 25A, 10V | 2.1V @ 1mA | 120 nC @ 5 V | ±10V | 16400 pF @ 25 V | - | 357W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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FDP2D3N10CN-CHANNEL SHIELDED GATE POWERTRE |
3992 | 1.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 222A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 4V @ 700µA | 152 nC @ 10 V | ±20V | 11180 pF @ 50 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFH7004TRPBFIRFH7004 - 12V-300V N-CHANNEL PO |
2939 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET®, StrongIRFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.9V @ 150µA | 194 nC @ 10 V | ±20V | 6419 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDPF12N50UTMOSFET N-CH 500V 10A TO220F |
2719 | 1.00 |
ДобавитьРасследования |
Bulk | FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 800mOhm @ 5A, 10V | 5V @ 250µA | 30 nC @ 10 V | ±30V | 1395 pF @ 25 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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2N7000-D74ZSMALL SIGNAL FIELD-EFFECT TRANSI |
2776 | 0.00 |
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Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 400mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRFB4310PBFIRFB4310 - 12V-300V N-CHANNEL PO |
3725 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 130A (Tc) | 10V | 7mOhm @ 75A, 10V | 4V @ 250µA | 250 nC @ 10 V | ±20V | 7670 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BSO201SPHBSO201 - 20V-250V P-CHANNEL POWE |
2299 | 1.00 |
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Bulk | SIPMOS® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Ta) | 2.5V, 4.5V | 8mOhm @ 14.9A, 4.5V | 1.2V @ 250µA | 88 nC @ 4.5 V | ±12V | 9600 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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AUIRFP4568-EMOSFET N-CH 150V 171A TO247AD |
2316 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 171A (Tc) | 10V | 5.9mOhm @ 103A, 10V | 5V @ 250µA | 227 nC @ 10 V | ±30V | 10470 pF @ 50 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BUK7Y12-100EXMOSFET N-CH 100V 85A LFPAK56 |
2686 | 1.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 85A (Tc) | 10V | 12mOhm @ 25A, 10V | 4V @ 1mA | 68 nC @ 10 V | ±20V | 5067 pF @ 25 V | - | 238W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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