Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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DI040N03PT-AQMOSFET, 30V, 40A, 25W |
2009 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 7mOhm @ 15A, 10V | 2.5V @ 250µA | 12 nC @ 4.5 V | ±20V | 1120 pF @ 15 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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DI035P04PT-AQMOSFET, -40V, -35A, P, 25W |
2261 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Tape & Reel (TR) | Automotive, AEC-Q101 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 35A (Tc) | 4.5V, 10V | 19mOhm @ 10A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 2570 pF @ 20 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK664R4-55C,118NEXPERIA BUK664R4 - N-CHANNEL T |
3281 | 0.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 5V, 10V | 4.9mOhm @ 25A, 10V | 2.8V @ 1mA | 124 nC @ 10 V | ±16V | 7750 pF @ 25 V | - | 204W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK664R4-55C,118NEXPERIA BUK664R4 - N-CHANNEL T |
3621 | 0.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 5V, 10V | 4.9mOhm @ 25A, 10V | 2.8V @ 1mA | 124 nC @ 10 V | ±16V | 7750 pF @ 25 V | - | 204W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BSC014N03LSGATMA1BSC014N03 - 12V-300V N-CHANNEL P |
2262 | 0.00 |
ДобавитьРасследования |
Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 34A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 30A, 10V | 2.2V @ 250µA | 131 nC @ 10 V | ±20V | 10000 pF @ 15 V | - | 2.5W (Ta), 139W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF322N-CHANNEL HERMETIC MOS HEXFET |
2449 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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HUF76423P3POWER FIELD-EFFECT TRANSISTOR, 3 |
3456 | 0.00 |
ДобавитьРасследования |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 35A (Tc) | 4.5V, 10V | 30mOhm @ 35A, 10V | 3V @ 250µA | 34 nC @ 10 V | ±16V | 1060 pF @ 25 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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AUIRFR9024NMOSFET P-CH 55V 11A DPAK |
3934 | 0.66 |
ДобавитьРасследования |
Bulk | HEXFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 11A (Tc) | 10V | 175mOhm @ 6.6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BSZ0910LSATMA1MOSFET N-CH 30V 18A/40A TSDSON |
3304 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 40A (Tc) | 4.5V, 10V | 4.5mOhm @ 30A, 10V | 2V @ 250µA | 17 nC @ 10 V | ±20V | 1100 pF @ 15 V | - | 2.1W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDS6574ASMALL SIGNAL FIELD-EFFECT TRANSI |
2717 | 0.00 |
ДобавитьРасследования |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 16A (Ta) | 1.8V, 4.5V | 6mOhm @ 16A, 4.5V | 1.5V @ 250µA | 105 nC @ 4.5 V | ±8V | 7657 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK969R0-60E,118NOW NEXPERIA BUK969R0-60E - 75A |
3671 | 0.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 5V | 8mOhm @ 20A, 10V | 2.1V @ 1mA | 29.8 nC @ 5 V | ±10V | 4350 pF @ 25 V | - | 137W (Tc) | -55°C ~ 175°C (TJ) | |
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Таблицы данных |
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IPP048N04NGIPP048N04 - 12V-300V N-CHANNEL P |
2205 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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HRF3205F102N-CHANNEL POWER MOSFET, 100A, 55 |
2011 | 0.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 8mOhm @ 59A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPD90N04S3-04OPTLMOS N-CHANNEL POWER MOSFET |
3442 | 0.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 3.6mOhm @ 80A, 10V | 4V @ 90µA | 80 nC @ 10 V | ±20V | 5200 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BSZ0911LSATMA1MOSFET N-CH 30V 12A/40A TSDSON |
3178 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ 5 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 40A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2V @ 250µA | 10 nC @ 10 V | ±20V | 670 pF @ 15 V | - | - | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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BSC016N03LSGBSC016N03 - 12V-300V N-CHANNEL P |
3562 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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IPB054N06N3GIPB054N06 - 12V-300V N-CHANNEL P |
2277 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
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FQP9N50CMOSFET N-CH 500V 9A TO220-3 |
2699 | 0.00 |
ДобавитьРасследования |
Bulk | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 9A (Tc) | 10V | 800mOhm @ 4.5A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRL1404ZSPBFMOSFET N-CH 40V 75A D2PAK |
2666 | 0.76 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFB33N15DPBFMOSFET N-CH 150V 33A TO220AB |
3230 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90 nC @ 10 V | ±30V | 2020 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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