Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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![]() Таблицы данных |
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IPZ60R070P6FKSA1MOSFET N-CH 600V 53.5A TO247-4 |
2380 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P6 | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 53.5A (Tc) | 10V | 70mOhm @ 20.6A, 10V | 4.5V @ 1.72mA | 100 nC @ 10 V | ±20V | 4750 pF @ 100 V | - | 391W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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IXTH2R4N120PMOSFET N-CH 1200V 2.4A TO247 |
2339 | 7.91 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 2.4A (Tc) | 10V | 7.5Ohm @ 500mA, 10V | 4.5V @ 250µA | 37 nC @ 10 V | ±20V | 1207 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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TK31J60W5,S1VQMOSFET N-CH 600V 30.8A TO3P |
2553 | 7.92 |
ДобавитьРасследования |
Tube | DTMOSIV | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 105 nC @ 10 V | ±30V | 3000 pF @ 300 V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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STF34NM60NDMOSFET N-CH 600V 29A TO220FP |
3746 | 7.93 |
ДобавитьРасследования |
Tube | FDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 110mOhm @ 14.5A, 10V | 5V @ 250µA | 80.4 nC @ 10 V | ±25V | 2785 pF @ 50 V | - | 40W (Tc) | 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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IXTQ120N15PMOSFET N-CH 150V 120A TO3P |
3075 | 7.94 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 120A (Tc) | 10V | 16mOhm @ 500mA, 10V | 5V @ 250µA | 150 nC @ 10 V | ±20V | 4900 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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IXTQ140N10PMOSFET N-CH 100V 140A TO3P |
2133 | 7.94 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V | 11mOhm @ 70A, 10V | 5V @ 250µA | 155 nC @ 10 V | ±20V | 4700 pF @ 25 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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IXTQ69N30PMMOSFET N-CH 300V 25A TO3PFP |
3443 | 7.97 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 25A (Tc) | 10V | 49mOhm @ 34.5A, 10V | 5V @ 250µA | 156 nC @ 10 V | ±20V | 4960 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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IXTA3N120HVMOSFET N-CH 1200V 3A TO263 |
2813 | 8.01 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 3A (Tc) | 10V | 4.5Ohm @ 500mA, 10V | 5V @ 250µA | 42 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXFP16N85XIXFP16N85X |
3738 | 8.06 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IXTA3N150HV-TRLMOSFET N-CH 1500V 3A TO263HV |
2250 | 8.07 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 1500 V | 3A (Tc) | 10V | 7.3Ohm @ 1.5A, 10V | 5V @ 250µA | 38.6 nC @ 10 V | ±30V | 1375 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IXFH7N100PMOSFET N-CH 1000V 7A TO247 |
2035 | 8.14 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 7A (Tc) | 10V | 1.9Ohm @ 3.5A, 10V | 6V @ 1mA | 47 nC @ 10 V | ±30V | 2590 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXFP16N85XMIXFP16N85XM |
3427 | 8.16 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() Таблицы данных |
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APT37F50SMOSFET N-CH 500V 37A D3PAK |
3030 | 8.17 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 37A (Tc) | 10V | 150mOhm @ 18A, 10V | 5V @ 1mA | 145 nC @ 10 V | ±30V | 5710 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IPDQ60R055CFD7XTMA1HIGH POWER_NEW PG-HDSOP-22 |
2867 | 8.11 |
ДобавитьРасследования |
Tape & Reel (TR) | CoolMOS™ | Active | - | MOSFET (Metal Oxide) | 600 V | - | - | - | - | - | - | - | - | - | - | Surface Mount |
![]() Таблицы данных |
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NVH040N65S3FSF3 FRFET AUTO 40MOHM TO-247 |
3246 | 8.30 |
ДобавитьРасследования |
Tray | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 5V @ 2.1mA | 153 nC @ 10 V | ±30V | 5875 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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IPP65R075CFD7AAKSA1AUTOMOTIVE_COOLMOS PG-TO220-3 |
3630 | 8.20 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 75mOhm @ 16.4A, 10V | 4.5V @ 820µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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APT56F60LMOSFET N-CH 600V 60A TO264 |
2412 | 17.64 |
ДобавитьРасследования |
Tube | POWER MOS 8™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 110mOhm @ 28A, 10V | 5V @ 2.5mA | 280 nC @ 10 V | ±30V | 11300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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APT5010B2LLGMOSFET N-CH 500V 46A T-MAX |
3168 | 17.67 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 95 nC @ 10 V | ±30V | 4360 pF @ 25 V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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IXTT10N100DMOSFET N-CH 1000V 10A TO268 |
2606 | 17.70 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 10A (Tc) | 10V | 1.4Ohm @ 10A, 10V | 3.5V @ 250µA | 130 nC @ 10 V | ±30V | 2500 pF @ 25 V | Depletion Mode | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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C3M0045065J1650V 45 M SIC MOSFET |
1000 | 17.72 |
ДобавитьРасследования |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 47A (Tc) | 15V | 60mOhm @ 17.6A, 15V | 3.6V @ 4.84mA | 61 nC @ 15 V | +19V, -8V | 1621 pF @ 400 V | - | 147W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |