Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFA20N85XHV-TRL IXFA20N85XHV-TRL

IXFA20N85XHV-TRL

MOSFET N-CH 850V 20A TO263HV

IXYS

2878 5.53
- +

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Tape & Reel (TR) HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 20A (Tc) 10V 330mOhm @ 10A, 10V 5.5V @ 2.5mA 63 nC @ 10 V ±30V 1660 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB11NM80T4

Таблицы данных

STB11NM80T4

STB11NM80T4

MOSFET N-CH 800V 11A D2PAK

STMicroelectronics

2758 8.32
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® MDmesh™ Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 400mOhm @ 5.5A, 10V 5V @ 250µA 43.6 nC @ 10 V ±30V 1630 pF @ 25 V - 150W (Tc) -65°C ~ 150°C (TJ) Surface Mount
NVHL082N65S3HF

Таблицы данных

NVHL082N65S3HF

NVHL082N65S3HF

SUPERFER3 FRFET AUTOMOTIVE 82MOH

onsemi

3159 5.57
- +

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Tray SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 40A (Tc) 10V 82mOhm @ 20A, 10V 5V @ 1mA 78 nC @ 10 V ±30V 3627 pF @ 400 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6030KNZC17

Таблицы данных

R6030KNZC17

R6030KNZC17

MOSFET N-CH 600V 30A TO3PF

Rohm Semiconductor

3518 5.64
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 5V @ 1mA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 86W (Tc) 150°C (TJ) Through Hole
STB50N65DM6 STB50N65DM6

STB50N65DM6

MOSFET N-CH 650V 33A D2PAK

STMicroelectronics

2114 5.64
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Tape & Reel (TR) MDmesh™ DM6 Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 91mOhm @ 16.5A, 10V 4.75V @ 250µA 52.5 nC @ 10 V ±25V 2300 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA16N60P3

Таблицы данных

IXFA16N60P3

IXFA16N60P3

MOSFET N-CH 600V 16A TO263

IXYS

2017 5.65
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Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 440mOhm @ 8A, 10V 5V @ 1.5mA 36 nC @ 10 V ±30V 1830 pF @ 25 V - 347W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA230N075T2

Таблицы данных

IXFA230N075T2

IXFA230N075T2

MOSFET N-CH 75V 230A TO263

IXYS

3744 5.65
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Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 230A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 1mA 178 nC @ 10 V - 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6030JNZC17

Таблицы данных

R6030JNZC17

R6030JNZC17

MOSFET N-CH 600V 30A TO3PF

Rohm Semiconductor

2670 5.66
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Bag - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 15V 143mOhm @ 15A, 15V 7V @ 5.5mA 74 nC @ 15 V ±30V 2500 pF @ 100 V - 93W (Tc) 150°C (TJ) Through Hole
TK35A65W5,S5X

Таблицы данных

TK35A65W5,S5X

TK35A65W5,S5X

MOSFET N-CH 650V 35A TO220SIS

Toshiba Semiconductor and Storage

2116 5.68
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Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Ta) 10V 95mOhm @ 17.5A, 10V 4.5V @ 2.1mA 115 nC @ 10 V ±30V 4100 pF @ 300 V - 50W (Tc) 150°C (TJ) Through Hole
IXFA8N85XHV

Таблицы данных

IXFA8N85XHV

IXFA8N85XHV

MOSFET N-CH 850V 8A TO263HV

IXYS

2572 5.72
- +

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Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 8A (Tc) 10V 850mOhm @ 4A, 10V 5.5V @ 250µA 17 nC @ 10 V ±30V 654 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA140N12T2

Таблицы данных

IXTA140N12T2

IXTA140N12T2

MOSFET N-CH 120V 140A TO263

IXYS

2513 5.75
- +

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Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 120 V 140A (Tc) 10V 10mOhm @ 70A, 10V 4.5V @ 250µA 174 nC @ 10 V ±20V 9700 pF @ 25 V - 577W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFP14N55X2 IXFP14N55X2

IXFP14N55X2

IXFP14N55X2

IXYS

2846 5.75
- +

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Tube HiPerFET™, Ultra X2 Active - - - - - - - - - - - - - -
NVH082N65S3F

Таблицы данных

NVH082N65S3F

NVH082N65S3F

SUPERFER3 FRFET AUTOMOTIVE 82MOH

onsemi

2691 5.76
- +

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Tray SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 40A (Tc) 10V 82mOhm @ 20A, 10V 5V @ 1mA 81 nC @ 10 V ±30V 3410 pF @ 400 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ96N25T

Таблицы данных

IXTQ96N25T

IXTQ96N25T

MOSFET N-CH 250V 96A TO3P

IXYS

2918 5.77
- +

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Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 96A (Tc) 10V 29mOhm @ 500mA, 10V 5V @ 1mA 114 nC @ 10 V ±30V 6100 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP32N65X

Таблицы данных

IXTP32N65X

IXTP32N65X

MOSFET N-CH 650V 32A TO220-3

IXYS

2517 5.77
- +

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Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 135mOhm @ 16A, 10V 5.5V @ 250µA 54 nC @ 10 V ±30V 2205 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP102N15T

Таблицы данных

IXFP102N15T

IXFP102N15T

MOSFET N-CH 150V 102A TO220AB

IXYS

3832 5.79
- +

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Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 150 V 102A (Tc) 10V 18mOhm @ 500mA, 10V 5V @ 1mA 87 nC @ 10 V ±20V 5220 pF @ 25 V - 455W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF7739L2TR

Таблицы данных

AUIRF7739L2TR

AUIRF7739L2TR

MOSFET N-CH 40V 46A DIRECTFET

Infineon Technologies

3608 5.79
- +

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Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 270A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 11880 pF @ 25 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVHL040N65S3

Таблицы данных

NVHL040N65S3

NVHL040N65S3

SF3 650V EASY 40MOHM TO-247 AUTO

onsemi

2545 5.80
- +

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Tray Automotive, AEC-Q101, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 65A (Tc) 10V 40mOhm @ 32.5A, 10V 4.5V @ 1.7mA 136 nC @ 10 V ±30V 4740 pF @ 400 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVHL065N65S3F

Таблицы данных

NVHL065N65S3F

NVHL065N65S3F

SUPERFET3 650V TO247

onsemi

3899 5.82
- +

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Tray SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 65mOhm @ 23A, 10V 5V @ 1.3mA 98 nC @ 10 V ±30V 4075 pF @ 400 V - 337W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ86N20T

Таблицы данных

IXTQ86N20T

IXTQ86N20T

MOSFET N-CH 200V 86A TO3P

IXYS

3862 5.82
- +

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Расследования

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 86A (Tc) 10V 29mOhm @ 500mA, 10V 5V @ 1mA 90 nC @ 10 V ±30V 4500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
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