Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFH46N30TMOSFET N-CH 300V 46A TO247 |
3536 | 5.40 |
ДобавитьРасследования |
Tube | HiPerFET™, Trench | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 46A (Tc) | 10V | 80mOhm @ 23A, 10V | 5V @ 4mA | 86 nC @ 10 V | ±20V | 4770 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW13N95K3MOSFET N-CH 950V 10A TO247-3 |
3917 | 5.61 |
ДобавитьРасследования |
Tube | SuperMESH3™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 950 V | 10A (Tc) | 10V | 850mOhm @ 5A, 10V | 5V @ 100µA | 51 nC @ 10 V | ±30V | 1620 pF @ 100 V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW36NM60NDMOSFET N-CH 600V 29A TO247 |
2973 | 5.62 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, FDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 110mOhm @ 14.5A, 10V | 5V @ 250µA | 80.4 nC @ 10 V | ±25V | 2785 pF @ 50 V | - | 190W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW40N60M2-4MOSFET N-CH 600V 34A TO247-3 |
3117 | 5.62 |
ДобавитьРасследования |
Tube | MDmesh™ II Plus | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 88mOhm @ 17A, 10V | 4V @ 250µA | 57 nC @ 10 V | ±25V | 2500 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW48N60M6MOSFET N-CH 600V 39A TO247 |
2664 | 5.62 |
ДобавитьРасследования |
Tube | MDmesh™ M6 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 39A (Tc) | 10V | 69mOhm @ 19.5A, 10V | 4.75V @ 250µA | 57 nC @ 10 V | ±25V | 2578 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA2N100MOSFET N-CH 1000V 2A TO263 |
3971 | 5.30 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 2A (Tc) | 10V | 7Ohm @ 1A, 10V | 4.5V @ 250µA | 18 nC @ 10 V | ±20V | 825 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTQ160N10TMOSFET N-CH 100V 160A TO3P |
3861 | 5.34 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 160A (Tc) | 10V | 7mOhm @ 25A, 10V | 4.5V @ 250µA | 132 nC @ 10 V | ±30V | 6600 pF @ 25 V | - | 430W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFP460PBFMOSFET N-CH 500V 20A TO247AC |
3394 | 5.35 |
ДобавитьРасследования |
Tube | HEXFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 4200 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFP460APBFXKMA1PLANAR >= 100V |
3386 | 5.35 |
ДобавитьРасследования |
Tube | - | Not For New Designs | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IXFA36N30P3MOSFET N-CH 300V 36A TO263AA |
2747 | 5.27 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 36A (Tc) | 10V | 110mOhm @ 18A, 10V | 4.5V @ 250µA | 30 nC @ 10 V | ±20V | 2040 pF @ 25 V | - | 347W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STB13NM60NMOSFET N-CH 600V 11A D2PAK |
3576 | 5.37 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±25V | 790 pF @ 50 V | - | 90W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IXTA76N25TMOSFET N-CH 250V 76A TO263 |
3639 | 5.37 |
ДобавитьРасследования |
Tube | Trench | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 76A (Tc) | 10V | 39mOhm @ 500mA, 10V | 5V @ 1mA | 92 nC @ 10 V | ±30V | 4500 pF @ 25 V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPZA60R099P7XKSA1MOSFET N-CH 600V 31A TO247-4 |
3469 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45 nC @ 10 V | ±20V | 1952 pF @ 400 V | - | 117W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTA3N120-TRRMOSFET N-CH 1200V 3A TO263 |
2428 | 5.39 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 3A (Tc) | 10V | 4.5Ohm @ 1.5A, 10V | 5V @ 250µA | 42 nC @ 10 V | ±20V | 1350 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SIHS20N50C-E3MOSFET N-CH 500V 20A SUPER247 |
3730 | 5.40 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 270mOhm @ 10A, 10V | 5V @ 250µA | 76 nC @ 10 V | ±30V | 2942 pF @ 25 V | - | 250mW (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SPW20N60CFDFKSA1MOSFET N-CH 650V 20.7A TO247-3 |
3369 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.7A (Tc) | 10V | 220mOhm @ 13.1A, 10V | 5V @ 1mA | 124 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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TK20A60U(Q,M)MOSFET N-CH 600V 20A TO220SIS |
3453 | 5.47 |
ДобавитьРасследования |
Bulk | DTMOSII | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 190mOhm @ 10A, 10V | 5V @ 1mA | 27 nC @ 10 V | ±30V | 1470 pF @ 10 V | - | 45W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFP5N100PMOSFET N-CH 1000V 5A TO220AB |
3655 | 5.48 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 5A (Tc) | 10V | 2.8Ohm @ 500mA, 10V | 6V @ 250µA | 33.4 nC @ 10 V | ±30V | 1830 pF @ 25 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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PCFQ5P10WMOSFET P-CH 100V DIE |
2168 | 5.50 |
ДобавитьРасследования |
Tray | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount |
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Таблицы данных |
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SIHG47N65E-GE3MOSFET N-CH 650V 47A TO247AC |
3877 | 5.52 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 47A (Tc) | 10V | 72mOhm @ 24A, 10V | 4V @ 250µA | 273 nC @ 10 V | ±30V | 5682 pF @ 100 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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