Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFP270N06T3

Таблицы данных

IXFP270N06T3

IXFP270N06T3

MOSFET N-CH 60V 270A TO220AB

IXYS

2203 5.17
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Tube HiperFET™, TrenchT3™ Active N-Channel MOSFET (Metal Oxide) 60 V 270A (Tc) 10V 3.1mOhm @ 100A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 12600 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA6N100D2-TRL IXTA6N100D2-TRL

IXTA6N100D2-TRL

MOSFET N-CH 1000V 6A TO263

IXYS

2774 5.17
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Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tj) 0V 2.2Ohm @ 3A, 0V 4.5V @ 250µA 95 nC @ 5 V ±20V 2650 pF @ 25 V Depletion Mode 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP110N15T2

Таблицы данных

IXFP110N15T2

IXFP110N15T2

MOSFET N-CH 150V 110A TO220AB

IXYS

3261 5.19
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Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 110A (Tc) 10V 13mOhm @ 55A, 10V 4.5V @ 250µA 150 nC @ 10 V ±20V 8600 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTP12N50PM

Таблицы данных

IXTP12N50PM

IXTP12N50PM

MOSFET N-CH 500V 6A TO220AB

IXYS

3985 5.20
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Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) 10V 500mOhm @ 6A, 10V 5.5V @ 250µA 29 nC @ 10 V ±30V 1830 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK20N60W,S1VF

Таблицы данных

TK20N60W,S1VF

TK20N60W,S1VF

MOSFET N-CH 600V 20A TO247

Toshiba Semiconductor and Storage

2140 5.20
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Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 155mOhm @ 10A, 10V 3.7V @ 1mA 48 nC @ 10 V ±30V 1680 pF @ 300 V - 165W (Tc) 150°C (TJ) Through Hole
NDCTR4065A NDCTR4065A

NDCTR4065A

MOSFET N-CH 650V 40A SMD

onsemi

2745 5.20
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Tape & Reel (TR) - Active - - - - - - - - - - - - - -
APT9F100B

Таблицы данных

APT9F100B

APT9F100B

MOSFET N-CH 1000V 9A TO247

Microchip Technology

3306 5.21
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Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 9A (Tc) 10V 1.6Ohm @ 5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2606 pF @ 25 V - 337W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R125CPXKSA1

Таблицы данных

IPA60R125CPXKSA1

IPA60R125CPXKSA1

MOSFET N-CH 650V 25A TO220-FP

Infineon Technologies

2293 1.00
- +

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Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 125mOhm @ 16A, 10V 3.5V @ 1.1mA 70 nC @ 10 V ±20V 2500 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI60R125CPXKSA1

Таблицы данных

IPI60R125CPXKSA1

IPI60R125CPXKSA1

MOSFET N-CH 650V 25A TO262-3

Infineon Technologies

3549 1.00
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Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 125mOhm @ 16A, 10V 3.5V @ 1.1mA 70 nC @ 10 V ±20V 2500 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6030ENZC17

Таблицы данных

R6030ENZC17

R6030ENZC17

MOSFET N-CH 600V 30A TO3PF

Rohm Semiconductor

2866 5.21
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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 4V @ 1mA 85 nC @ 10 V ±20V 2100 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
IXTA3N120HV-TRL IXTA3N120HV-TRL

IXTA3N120HV-TRL

MOSFET N-CH 1200V 3A TO263HV

IXYS

3684 5.22
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Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 1.5A, 10V 5V @ 250µA 42 nC @ 10 V ±20V 1100 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK110Z65Z,S1F

Таблицы данных

TK110Z65Z,S1F

TK110Z65Z,S1F

POWER MOSFET TRANSISTOR TO-247-4

Toshiba Semiconductor and Storage

3823 5.12
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Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 110mOhm @ 12A, 10V 4V @ 1.02mA 40 nC @ 10 V ±30V 2250 pF @ 300 V - 190W (Tc) 150°C Through Hole
IXTQ18N60P

Таблицы данных

IXTQ18N60P

IXTQ18N60P

MOSFET N-CH 600V 18A TO3P

IXYS

2061 5.24
- +

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 420mOhm @ 9A, 10V 5.5V @ 250µA 49 nC @ 10 V ±30V 2500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW50R140CPFKSA1

Таблицы данных

IPW50R140CPFKSA1

IPW50R140CPFKSA1

MOSFET N-CH 550V 23A TO247-3

Infineon Technologies

50381 3.15
- +

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Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 550 V 23A (Tc) 10V 140mOhm @ 14A, 10V 3.5V @ 930µA 64 nC @ 10 V ±20V 2540 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXKP24N60C5

Таблицы данных

IXKP24N60C5

IXKP24N60C5

MOSFET N-CH 600V 24A TO220AB

IXYS

2835 5.28
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Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
AUIRFS4115TRL

Таблицы данных

AUIRFS4115TRL

AUIRFS4115TRL

MOSFET N-CH 150V 99A D2PAK

Infineon Technologies

3993 5.29
- +

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Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 150 V 99A (Tc) 10V 12.1mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFP7N80PM

Таблицы данных

IXFP7N80PM

IXFP7N80PM

MOSFET N-CH 800V 3.5A TO220AB

IXYS

3461 5.29
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Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 3.5A (Tc) 10V 1.44Ohm @ 3.5A, 10V 5V @ 1mA 32 nC @ 10 V ±30V 1890 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R150CFDAFKSA1

Таблицы данных

IPW65R150CFDAFKSA1

IPW65R150CFDAFKSA1

MOSFET N-CH 650V 22.4A TO247-3

Infineon Technologies

3326 1.00
- +

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Bulk,Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -40°C ~ 150°C (TJ) Through Hole
R6025JNZC17

Таблицы данных

R6025JNZC17

R6025JNZC17

MOSFET N-CH 600V 25A TO3PF

Rohm Semiconductor

2247 5.39
- +

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Bag - Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 15V 182mOhm @ 12.5A, 15V 7V @ 2.5mA 57 nC @ 15 V ±30V 1900 pF @ 100 V - 85W (Tc) 150°C (TJ) Through Hole
IPW90R340C3XKSA1

Таблицы данных

IPW90R340C3XKSA1

IPW90R340C3XKSA1

MOSFET N-CH 900V 15A TO247-3

Infineon Technologies

3255 5.40
- +

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Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 340mOhm @ 9.2A, 10V 3.5V @ 1mA 94 nC @ 10 V ±20V 2400 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
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