Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTQ96N15P

Таблицы данных

IXTQ96N15P

IXTQ96N15P

MOSFET N-CH 150V 96A TO3P

IXYS

2558 5.90
- +

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 250µA 110 nC @ 10 V ±20V 3500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVHL050N65S3F

Таблицы данных

NVHL050N65S3F

NVHL050N65S3F

SF3 FRFET AUTO 50MOHM TO-247

onsemi

3508 5.90
- +

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Tray SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 58A (Tc) 10V 50mOhm @ 29A, 10V 5V @ 1.7mA 123 nC @ 10 V ±30V 5404 pF @ 400 V - 403W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB30N60AEL-GE3 SIHB30N60AEL-GE3

SIHB30N60AEL-GE3

MOSFET N-CH 600V 28A TO263

Vishay Siliconix

3006 5.95
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® EL Obsolete N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 120mOhm @ 15A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2565 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPI051N15N5AKSA1

Таблицы данных

IPI051N15N5AKSA1

IPI051N15N5AKSA1

MV POWER MOS

Infineon Technologies

3864 1.00
- +

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Bulk,Tube * Active - - - - - - - - - - - - - -
STL45N65M5

Таблицы данных

STL45N65M5

STL45N65M5

MOSFET N-CH 650V 22.5A PWRFLAT

STMicroelectronics

2273 9.22
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 3.8A (Ta), 22.5A (Tc) 10V 86mOhm @ 14.5A, 10V 5V @ 250µA 82 nC @ 10 V ±25V 3470 pF @ 100 V - 2.8W (Ta), 160W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH76N15T2

Таблицы данных

IXFH76N15T2

IXFH76N15T2

MOSFET N-CH 150V 76A TO247

IXYS

2795 5.96
- +

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Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 76A (Tc) 10V 22mOhm @ 38A, 10V 4.5V @ 250µA 97 nC @ 10 V ±20V 5800 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA34N65X2

Таблицы данных

IXTA34N65X2

IXTA34N65X2

MOSFET N-CH 650V 34A TO263AA

IXYS

2383 5.96
- +

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Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 96mOhm @ 17A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 3000 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTQ32P20T IXTQ32P20T

IXTQ32P20T

MOSFET P-CH 200V 32A TO3P

IXYS

3529 5.96
- +

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Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 130mOhm @ 16A, 10V 4V @ 250µA 185 nC @ 10 V ±15V 14500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA260N055T2-7

Таблицы данных

IXTA260N055T2-7

IXTA260N055T2-7

MOSFET N-CH 55V 260A TO263-7

IXYS

2498 6.03
- +

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Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 260A (Tc) 10V 3.3mOhm @ 50A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 10800 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTH96N25T

Таблицы данных

IXTH96N25T

IXTH96N25T

MOSFET N-CH 250V 96A TO247

IXYS

3901 6.06
- +

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Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 96A (Tc) 10V 29mOhm @ 500mA, 10V 5V @ 1mA 114 nC @ 10 V ±30V 6100 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP50N20X3 IXFP50N20X3

IXFP50N20X3

DISCMSFT NCHULTRJNCTX3CLASS TO-2

IXYS

2011 6.06
- +

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Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 30mOhm @ 25A, 10V 4.5V @ 1mA 33 nC @ 10 V ±20V 2100 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI110N20N3GAKSA1

Таблицы данных

IPI110N20N3GAKSA1

IPI110N20N3GAKSA1

MOSFET N-CH 200V 88A TO262-3

Infineon Technologies

3291 4.36
- +

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Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 88A (Tc) 10V 11mOhm @ 88A, 10V 4V @ 270µA 87 nC @ 10 V ±20V 7100 pF @ 100 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPT65R060CFD7XTMA1 IPT65R060CFD7XTMA1

IPT65R060CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies

2351 6.09
- +

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Tape & Reel (TR) - Active - - 650 V - - - - - - - - - - Surface Mount
STWA20N95DK5

Таблицы данных

STWA20N95DK5

STWA20N95DK5

MOSFET N-CH 950V 18A TO247

STMicroelectronics

3725 6.11
- +

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Tube MDmesh™ DK5 Active N-Channel MOSFET (Metal Oxide) 950 V 18A (Tc) 10V 330mOhm @ 9A, 10V 5V @ 100µA 50.7 nC @ 10 V ±30V 1600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMTS0D7N06CTXG

Таблицы данных

NVMTS0D7N06CTXG

NVMTS0D7N06CTXG

MOSFET N-CH 60V 60.5A/464A 8DFNW

onsemi

3572 6.13
- +

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Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 60.5A (Ta), 464A (Tc) 10V 0.72mOhm @ 50A, 10V 4V @ 250µA 152 nC @ 10 V ±20V 11535 pF @ 30 V - 5W (Ta), 294.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCA36N60NF

Таблицы данных

FCA36N60NF

FCA36N60NF

MOSFET N-CH 600V 34.9A TO3PN

onsemi

2684 6.13
- +

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Tube FRFET®, SupreMOS® Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 34.9A (Tc) 10V 95mOhm @ 18A, 10V 5V @ 250µA 112 nC @ 10 V ±30V 4245 pF @ 100 V - 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH340N04T4

Таблицы данных

IXTH340N04T4

IXTH340N04T4

MOSFET N-CH 40V 340A TO247

IXYS

2702 6.13
- +

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Tube Trench Active N-Channel MOSFET (Metal Oxide) 40 V 340A (Tc) 10V 1.9mOhm @ 100A, 10V 4V @ 250µA 256 nC @ 10 V ±15V 13000 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP050N60E-GE3

Таблицы данных

SIHP050N60E-GE3

SIHP050N60E-GE3

MOSFET N-CH 600V 51A TO220AB

Vishay Siliconix

3460 6.14
- +

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Расследования

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 51A (Tc) 10V 50mOhm @ 23A, 10V 5V @ 250µA 130 nC @ 10 V ±30V 3459 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPL65R065CFD7AUMA1

Таблицы данных

IPL65R065CFD7AUMA1

IPL65R065CFD7AUMA1

HIGH POWER_NEW

Infineon Technologies

3192 6.15
- +

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Расследования

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 650 V 33A (Tc) 10V 65mOhm @ 16.4A, 10V 4.5V @ 860µA 68 nC @ 10 V ±20V 3288 pF @ 400 V - 195W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPZ60R099P6FKSA1

Таблицы данных

IPZ60R099P6FKSA1

IPZ60R099P6FKSA1

MOSFET N-CH 600V 37.9A TO247-4

Infineon Technologies

3581 1.00
- +

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Расследования

Bulk,Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 37.9A (Tc) 10V 99mOhm @ 14.5A, 10V 4.5V @ 1.21mA 70 nC @ 10 V ±20V 3330 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
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