Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT12M80B

Таблицы данных

APT12M80B

APT12M80B

MOSFET N-CH 800V 13A TO247

Microchip Technology

3997 4.95
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Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 800mOhm @ 6A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2470 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK31V60W,LVQ

Таблицы данных

TK31V60W,LVQ

TK31V60W,LVQ

MOSFET N-CH 600V 30.8A 4DFN

Toshiba Semiconductor and Storage

2710 4.95
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 98mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 240W (Tc) 150°C (TJ) Surface Mount
PCF6680AS PCF6680AS

PCF6680AS

DIE TRANS MOSFET N-CH 30V

MICROSS/On Semiconductor

3559 4.95
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Tray * Active - - - - - - - - - - - - - -
SPA20N65C3XKSA1

Таблицы данных

SPA20N65C3XKSA1

SPA20N65C3XKSA1

MOSFET N-CH 650V 20.7A TO220-3

Infineon Technologies

975 3.32
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Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 114 nC @ 10 V ±20V 2400 pF @ 25 V - 34.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6020JNZC17

Таблицы данных

R6020JNZC17

R6020JNZC17

MOSFET N-CH 600V 20A TO3PF

Rohm Semiconductor

3667 4.96
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Bag - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 15V 234mOhm @ 10A, 15V 7V @ 3.5mA 45 nC @ 15 V ±30V 1500 pF @ 100 V - 76W (Tc) 150°C (TJ) Through Hole
IXTH270N04T4

Таблицы данных

IXTH270N04T4

IXTH270N04T4

MOSFET N-CH 40V 270A TO247

IXYS

3655 4.96
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Tube Trench Active N-Channel MOSFET (Metal Oxide) 40 V 270A (Tc) 10V 2.4mOhm @ 50A, 10V 4V @ 250µA 182 nC @ 10 V ±15V 9140 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA340N04T4-7

Таблицы данных

IXTA340N04T4-7

IXTA340N04T4-7

MOSFET N-CH 40V 340A TO263-7

IXYS

3277 4.96
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Tube Trench Active N-Channel MOSFET (Metal Oxide) 40 V 340A (Tc) 10V 1.7mOhm @ 100A, 10V 4V @ 250µA 256 nC @ 10 V ±15V 13000 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH18N65X2

Таблицы данных

IXFH18N65X2

IXFH18N65X2

MOSFET N-CH 650V 18A TO247

IXYS

3420 4.98
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Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 200mOhm @ 9A, 10V 5V @ 1.5mA 29 nC @ 10 V ±30V 1520 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFS5C677NLT1G

Таблицы данных

NTMFS5C677NLT1G

NTMFS5C677NLT1G

MOSFET N-CH 60V 11A/36A 5DFN

onsemi

3268 4.99
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Tape & Reel (TR),Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 11A (Ta), 36A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2V @ 25µA 9.7 nC @ 10 V ±20V 620 pF @ 25 V - 3.5W (Ta), 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA60N20T

Таблицы данных

IXTA60N20T

IXTA60N20T

MOSFET N-CH 200V 60A TO263

IXYS

2079 4.99
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Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 40mOhm @ 30A, 10V 5V @ 250µA 73 nC @ 10 V ±20V 4530 pF @ 25 V - 500W (Tc) - Surface Mount
AUIRFSA8409-7P

Таблицы данных

AUIRFSA8409-7P

AUIRFSA8409-7P

MOSFET N-CH 40V 523A D2PAK

Infineon Technologies

2592 5.00
- +

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Tube Automotive, AEC-Q101, HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 523A (Tc) 10V 0.69mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STI11NM80

Таблицы данных

STI11NM80

STI11NM80

MOSFET N-CH 800V 11A I2PAK

STMicroelectronics

2724 5.01
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Tube MDmesh™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 400mOhm @ 5.5A, 10V 5V @ 250µA 43.6 nC @ 10 V ±30V 1630 pF @ 25 V - 150W (Tc) -65°C ~ 150°C (TJ) Through Hole
APT11F80B

Таблицы данных

APT11F80B

APT11F80B

MOSFET N-CH 800V 12A TO247

Microchip Technology

3842 5.01
- +

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Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 900mOhm @ 6A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2471 pF @ 25 V - 337W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA50N20P

Таблицы данных

IXTA50N20P

IXTA50N20P

MOSFET N-CH 200V 50A TO263

IXYS

3038 5.03
- +

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Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 60mOhm @ 50A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 2720 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFA26N50P3

Таблицы данных

IXFA26N50P3

IXFA26N50P3

MOSFET N-CH 500V 26A TO263

IXYS

3664 5.04
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Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5V @ 4mA 42 nC @ 10 V ±30V 2220 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA14N85XHV

Таблицы данных

IXFA14N85XHV

IXFA14N85XHV

MOSFET N-CH 850V 14A TO263

IXYS

3208 5.04
- +

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Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 14A (Tc) 10V 550mOhm @ 500mA, 10V 5.5V @ 1mA 30 nC @ 10 V ±30V 1043 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS4010-7TRL

Таблицы данных

AUIRFS4010-7TRL

AUIRFS4010-7TRL

MOSFET N-CH 100V 190A D2PAK-7P

Infineon Technologies

3047 5.04
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Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 190A (Tc) - 4mOhm @ 110A, 10V 4V @ 250µA 230 nC @ 10 V - 9830 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STFW38N65M5

Таблицы данных

STFW38N65M5

STFW38N65M5

MOSFET N-CH 650V 30A ISOWATT

STMicroelectronics

3612 5.05
- +

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Tube MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 95mOhm @ 15A, 10V 5V @ 250µA 71 nC @ 10 V ±25V 3000 pF @ 100 V - 57W (Tc) 150°C (TJ) Through Hole
IXFA30N60X

Таблицы данных

IXFA30N60X

IXFA30N60X

MOSFET N-CH 600V 30A TO263

IXYS

2919 5.05
- +

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Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 155mOhm @ 15A, 10V 4.5V @ 4mA 56 nC @ 10 V ±30V 2270 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK28N65W,S1F

Таблицы данных

TK28N65W,S1F

TK28N65W,S1F

MOSFET N-CH 650V 27.6A TO247

Toshiba Semiconductor and Storage

3759 5.05
- +

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Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 27.6A (Ta) 10V 110mOhm @ 13.8A, 10V 3.5V @ 1.6mA 75 nC @ 10 V ±30V 3000 pF @ 300 V - 230W (Tc) 150°C (TJ) Through Hole
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