Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IXFQ24N60XMOSFET N-CH 600V 24A TO3P |
3614 | 5.84 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 175mOhm @ 12A, 10V | 4.5V @ 2.5mA | 47 nC @ 10 V | ±30V | 1910 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP32N65XMMOSFET N-CH 650V 14A TO220-3 |
2483 | 5.84 |
ДобавитьРасследования |
Tube | Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | 10V | 135mOhm @ 16A, 10V | 5.5V @ 250µA | 54 nC @ 10 V | ±30V | 2206 pF @ 25 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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APT30N60BC6MOSFET N-CH 600V 30A TO247 |
2985 | 5.84 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 960µA | 88 nC @ 10 V | ±20V | 2267 pF @ 25 V | - | 219W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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FCPF36N60NTMOSFET N-CH 600V 36A TO220F |
3571 | 5.85 |
ДобавитьРасследования |
Tube | SupreMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 90mOhm @ 18A, 10V | 4V @ 250µA | 112 nC @ 10 V | ±30V | 4785 pF @ 100 V | - | - | -55°C ~ 150°C (TJ) | Through Hole |
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IXFP14N55X2MIXFP14N55X2M |
2408 | 5.85 |
ДобавитьРасследования |
Tube | HiPerFET™, Ultra X2 | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Таблицы данных |
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IXTH460P2MOSFET N-CH 500V 24A TO247 |
3326 | 5.86 |
ДобавитьРасследования |
Tube | PolarP2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 24A (Tc) | 10V | 270mOhm @ 12A, 10V | 4.5V @ 250µA | 48 nC @ 10 V | ±30V | 2890 pF @ 25 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IXTA32P20T-TRLMOSFET P-CH 200V 32A TO263 |
3405 | 5.86 |
ДобавитьРасследования |
Tape & Reel (TR) | TrenchP™ | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 32A (Tc) | 10V | 130mOhm @ 16A, 10V | 4V @ 250µA | 185 nC @ 10 V | ±15V | 14500 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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R6535KNZC17MOSFET N-CH 650V 35A TO3 |
3046 | 5.88 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 115mOhm @ 18.1A, 10V | 5V @ 1.21mA | 72 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 102W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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R6535ENZC17MOSFET N-CH 650V 35A TO3 |
3018 | 5.88 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 115mOhm @ 18.1A, 10V | 4V @ 1.21mA | 110 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 102W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP20N65XMOSFET N-CH 650V 20A TO220 |
3949 | 6.30 |
ДобавитьРасследования |
Tube | Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 210mOhm @ 10A, 10V | 5.5V @ 250µA | 35 nC @ 10 V | ±30V | 1390 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPW65R110CFDFKSA2MOSFET N-CH 650V 31.2A TO247-3 |
2694 | 6.30 |
ДобавитьРасследования |
Tube | CoolMOS™ CFD2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IPZ60R099C7XKSA1MOSFET N-CH 600V 22A TO247-4 |
14731 | 4.13 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ C7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42 nC @ 10 V | ±20V | 1819 pF @ 400 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXFA3N120-TRLMOSFET N-CH 1200V 3A TO263 |
3623 | 9.73 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HiPerFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 3A (Tc) | 10V | 4.5Ohm @ 1.5A, 10V | 5V @ 1.5mA | 39 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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R6035KNZC17MOSFET N-CH 600V 35A TO3PF |
2031 | 5.88 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 102mOhm @ 18.1A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 102W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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R6035ENZC17MOSFET N-CH 600V 35A TO3PF |
3288 | 5.88 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 102mOhm @ 18.1A, 10V | 4V @ 1mA | 110 nC @ 10 V | ±20V | 2720 pF @ 25 V | - | 120W (Tc) | 150°C (TJ) | Through Hole |
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Таблицы данных |
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NVH050N65S3FSF3 FRFET AUTO 50MOHM TO-247 |
2346 | 5.88 |
ДобавитьРасследования |
Tray | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 50mOhm @ 29A, 10V | 5V @ 1.7mA | 123 nC @ 10 V | ±30V | 5404 pF @ 400 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTT52N30PMOSFET N-CH 300V 52A TO268 |
3866 | 5.88 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 52A (Tc) | 10V | 66mOhm @ 500mA, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 3490 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IXTA20N65X-TRLMOSFET N-CH 650V 20A TO263 |
2292 | 5.88 |
ДобавитьРасследования |
Tape & Reel (TR) | Ultra X | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 210mOhm @ 10A, 10V | 5.5V @ 250µA | 35 nC @ 10 V | ±30V | 1390 pF @ 25 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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TSM80N400CF C0GMOSFET N-CH 800V 12A ITO220S |
3861 | 5.88 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 400mOhm @ 2.7A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±30V | 1848 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTQ64N25PMOSFET N-CH 250V 64A TO3P |
2428 | 5.90 |
ДобавитьРасследования |
Tube | Polar | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 64A (Tc) | 10V | 49mOhm @ 500mA, 10V | 5V @ 250µA | 105 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 400W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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