Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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NVMFWS3D6N10MCLT1GPTNG 100V LL NCH SO-8FL WETTABLE |
2115 | 3.82 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Ta), 132A (Tc) | 4.5V, 10V | 3.6mOhm @ 48A, 10V | 3V @ 270µA | 60 nC @ 10 V | ±20V | 4411 pF @ 50 V | - | 3.2W (Ta), 139W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SUM70042E-GE3N-CHANNEL 100-V (D-S) MOSFET D2P |
2995 | 3.13 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 150A (Tc) | 7.5V, 10V | 4mOhm @ 20A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 6490 pF @ 50 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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PJP60R190E_T0_00001600V N-CHANNEL SUPER JUNCTION MO |
2630 | 3.14 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.1A (Ta), 20A (Tc) | 10V | 196mOhm @ 10A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 1421 pF @ 25 V | - | 2W (Ta), 231W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCP125N65S3MOSFET N-CH 650V 24A TO220-3 |
2164 | 3.27 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 24A (Tc) | 10V | 125mOhm @ 12A, 10V | 4.5V @ 2.4mA | 46 nC @ 10 V | ±30V | 1940 pF @ 400 V | - | 181W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FDP16AN08A0MOSFET N-CH 75V 9A/58A TO220-3 |
15890 | 2.05 |
ДобавитьРасследования |
Bulk,Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 9A (Ta), 58A (Tc) | 6V, 10V | 16mOhm @ 58A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±20V | 1857 pF @ 25 V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXTA1R6N100D2MOSFET N-CH 1000V 1.6A TO263 |
2045 | 3.16 |
ДобавитьРасследования |
Tube | Depletion | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 1.6A (Tc) | 10V | 10Ohm @ 800mA, 0V | - | 27 nC @ 5 V | ±20V | 645 pF @ 25 V | Depletion Mode | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NTMYS021N06CLTWGMOSFET N-CH 60V 9.8A/27A 4LFPAK |
2931 | 4.11 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 9.8A (Ta), 27A (Tc) | 4.5V, 10V | 21mOhm @ 10A, 10V | 2V @ 16µA | 5 nC @ 10 V | ±20V | 410 pF @ 25 V | - | 3.8W (Ta), 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IXTY90N055T2MOSFET N-CH 55V 90A TO252 |
2162 | 3.16 |
ДобавитьРасследования |
Tube | TrenchT2™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 90A (Tc) | 10V | 8.4mOhm @ 25A, 10V | 4V @ 250µA | 42 nC @ 10 V | ±20V | 2770 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPT030N12N3GATMA1TRENCH >=100V |
2016 | 5.75 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 24A (Ta), 237A (Tc) | 10V | 3mOhm @ 100A, 10V | 4V @ 270µA | 198 nC @ 10 V | ±20V | 13000 pF @ 60 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NTPF360N80S3ZMOSFET N-CH 800V 13A TO220FP |
1000 | 3.17 |
ДобавитьРасследования |
Bulk,Tube | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 360mOhm @ 6.5A, 10V | 3.8V @ 300µA | 25.3 nC @ 10 V | ±20V | 1143 pF @ 400 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STD15N65M5MOSFET N CH 650V 11A DPAK |
3595 | 3.18 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 340mOhm @ 5.5A, 10V | 5V @ 250µA | 22 nC @ 10 V | ±25V | 816 pF @ 100 V | - | 85W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IPA65R310CFDXKSA1MOSFET N-CH 650V 11.4A TO220 |
3926 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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FCPF650N80ZMOSFET N-CH 800V 8A TO220F |
2845 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | SuperFET® II | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 650mOhm @ 4A, 10V | 4.5V @ 800µA | 35 nC @ 10 V | ±20V | 1565 pF @ 100 V | - | 30.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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RJK0703DPP-A0#T2MOSFET N-CH 75V 70A TO220FPA |
2447 | 3.18 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 70A (Ta) | 10V | 6.7mOhm @ 35A, 10V | 4V @ 1mA | 56 nC @ 10 V | ±20V | 4150 pF @ 10 V | - | 25W (Ta) | 150°C | Through Hole |
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Таблицы данных |
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AUIRFS3207Z-INFMOSFET N-CH 75V 120A D2PAK |
3698 | 0.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | - | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6920 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIHG15N80AEF-GE3EF SERIES POWER MOSFET WITH FAST |
3152 | 3.18 |
ДобавитьРасследования |
Tube | EF | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 350mOhm @ 6.5A, 10V | 4V @ 250µA | 54 nC @ 10 V | ±30V | 1128 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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STW7N90K5MOSFET N-CH 900V 7A TO247-3 |
2666 | 3.19 |
ДобавитьРасследования |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 7A (Tc) | 10V | - | 5V @ 100µA | - | ±30V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IXTP05N100MOSFET N-CH 1000V 750MA TO220AB |
3872 | 3.21 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 750mA (Tc) | 10V | 17Ohm @ 375mA, 10V | 4.5V @ 250µA | 7.8 nC @ 10 V | ±30V | 260 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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NVMTS1D2N08HMOSFET N-CH 80V 43.5A/337A 8DFNW |
3364 | 6.41 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 43.5A (Ta), 337A (Tc) | 10V | 1.1mOhm @ 90A, 10V | 4V @ 590µA | 147 nC @ 10 V | ±20V | 10100 pF @ 40 V | - | 5W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IPA80R460CEXKSA2MOSFET N-CH 800V 10.8A TO220 |
3205 | 1.00 |
ДобавитьРасследования |
Bulk,Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 10.8A (Ta) | 10V | 460mOhm @ 7.1A, 10V | 3.9V @ 680µA | 64 nC @ 10 V | ±20V | 1600 pF @ 100 V | - | 34W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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