Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RF1S9640SM9A

Таблицы данных

RF1S9640SM9A

RF1S9640SM9A

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

2325 0.00
- +

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Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL540PBF-BE3

Таблицы данных

IRL540PBF-BE3

IRL540PBF-BE3

MOSFET N-CH 100V 28A TO220AB

Vishay Siliconix

2649 2.63
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) - 77mOhm @ 17A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW50R199CP

Таблицы данных

IPW50R199CP

IPW50R199CP

N-CHANNEL POWER MOSFET

Infineon Technologies

2270 0.00
- +

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Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 45 nC @ 10 V ±20V 1800 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
STL31N65M5

Таблицы данных

STL31N65M5

STL31N65M5

MOSFET N-CH 650V 15A PWRFLAT88

STMicroelectronics

3404 2.89
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 2.8A (Ta), 15A (Tc) 10V 162mOhm @ 11A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1865 pF @ 100 V - 2.8W (Ta), 125W (Tc) 150°C (TJ) Surface Mount
RM45N600T7 RM45N600T7

RM45N600T7

MOSFET N-CH 600V 44.5A TO247

Rectron USA

2208 2.90
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 44.5A (Tj) 10V 90mOhm @ 15.6A, 10V 4V @ 250µA - ±30V 2808 pF @ 100 V - 431W -55°C ~ 150°C (TJ) Through Hole
NTB190N65S3HF

Таблицы данных

NTB190N65S3HF

NTB190N65S3HF

MOSFET N-CH 650V 20A D2PAK-3

onsemi

2831 2.94
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 430µA 34 nC @ 10 V ±30V 1610 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQPF7N65C

Таблицы данных

FQPF7N65C

FQPF7N65C

MOSFET N-CH 650V 7A TO220F

onsemi

3119 1.85
- +

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Tube,Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 1.4Ohm @ 3.5A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1245 pF @ 25 V - 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ302-AZ

Таблицы данных

2SJ302-AZ

2SJ302-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc

3529 0.00
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Bulk * Obsolete - - - - - - - - - - - - - -
NVMFS5C404NWFAFT1G

Таблицы данных

NVMFS5C404NWFAFT1G

NVMFS5C404NWFAFT1G

MOSFET N-CH 40V 53A/378A 5DFN

onsemi

3151 5.90
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 53A (Ta), 378A (Tc) 10V 0.7mOhm @ 50A, 10V 4V @ 250µA 128 nC @ 10 V ±20V 8400 pF @ 25 V - 3.9W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP32N20C

Таблицы данных

FQP32N20C

FQP32N20C

MOSFET N-CH 200V 28A TO220-3

onsemi

3170 3.12
- +

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Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 200 V 28A (Tc) 10V 82mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2200 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK0603DPN-A0#T2

Таблицы данных

RJK0603DPN-A0#T2

RJK0603DPN-A0#T2

MOSFET N-CH 60V 80A TO220ABA

Renesas Electronics America Inc

2396 3.12
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Ta) 10V 5.2mOhm @ 40A, 10V 4V @ 1mA 57 nC @ 10 V ±20V 4150 pF @ 10 V - 125W (Ta) 150°C Through Hole
SIHA17N80AEF-GE3 SIHA17N80AEF-GE3

SIHA17N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

2469 3.12
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Tc) 10V 305mOhm @ 8.5A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 1300 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK3R2A08QM,S4X

Таблицы данных

TK3R2A08QM,S4X

TK3R2A08QM,S4X

UMOS10 TO-220SIS 80V 3.2MOHM

Toshiba Semiconductor and Storage

2904 2.27
- +

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Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 92A (Tc) 6V, 10V 3.2mOhm @ 46A, 10V 3.5V @ 1.3mA 102 nC @ 10 V ±20V 7670 pF @ 40 V - 45W (Tc) 175°C Through Hole
FDP053N08B-F102

Таблицы данных

FDP053N08B-F102

FDP053N08B-F102

MOSFET N-CH 80V 75A TO220-3

onsemi

3160 2.27
- +

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Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 5.3mOhm @ 75A, 10V 4.5V @ 250µA 85 nC @ 10 V ±20V 5960 pF @ 40 V - 146W (Tc) -55°C ~ 175°C (TJ) Through Hole
RJK1003DPP-A0#T2

Таблицы данных

RJK1003DPP-A0#T2

RJK1003DPP-A0#T2

MOSFET N-CH 100V 50A TO220FPA

Renesas Electronics America Inc

2390 3.38
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Ta) 10V 11mOhm @ 25A, 10V 4V @ 1mA 59 nC @ 10 V ±20V 4150 pF @ 10 V - 25W (Ta) 150°C Through Hole
NP180N04TUK-E1-AY

Таблицы данных

NP180N04TUK-E1-AY

NP180N04TUK-E1-AY

MOSFET N-CH 40V 180A TO263-7

Renesas Electronics America Inc

2470 5.41
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 1.05mOhm @ 90A, 10V 4V @ 250µA 297 nC @ 10 V ±20V 15750 pF @ 25 V - 1.8W (Ta), 348W (Tc) 175°C (TJ) Surface Mount
FCP190N65S3R0

Таблицы данных

FCP190N65S3R0

FCP190N65S3R0

MOSFET N-CH 650V 17A TO220-3

onsemi

3179 2.78
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 4.5V @ 1.7mA 33 nC @ 10 V ±30V 1350 pF @ 400 V - 144W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMT190N65S3HF

Таблицы данных

NTMT190N65S3HF

NTMT190N65S3HF

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

2487 5.31
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 430µA 34 nC @ 10 V ±30V 1610 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RJK6035DPP-A0#T2

Таблицы данных

RJK6035DPP-A0#T2

RJK6035DPP-A0#T2

MOSFET N-CH 500V 1.2A TO220FP

Renesas Electronics America Inc

2897 2.67
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 500 V - 8V, 10V - - - - - - - - Through Hole
IPB65R155CFD7ATMA1

Таблицы данных

IPB65R155CFD7ATMA1

IPB65R155CFD7ATMA1

HIGH POWER_NEW

Infineon Technologies

3024 4.87
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 155mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1283 pF @ 400 V - 77W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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