Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDP12N50NZ

Таблицы данных

FDP12N50NZ

FDP12N50NZ

MOSFET N-CH 500V 11.5A TO220-3

onsemi

3444 1.92
- +

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Tube,Tube UniFET-II™ Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Tc) 10V 520mOhm @ 5.75A, 10V 5V @ 250µA 30 nC @ 10 V ±25V 1235 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP110N055T2

Таблицы данных

IXTP110N055T2

IXTP110N055T2

MOSFET N-CH 55V 110A TO220AB

IXYS

3381 2.98
- +

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Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 6.6mOhm @ 25A, 10V 4V @ 250µA 57 nC @ 10 V ±20V 3060 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTMFS6H800NLT1G

Таблицы данных

NTMFS6H800NLT1G

NTMFS6H800NLT1G

MOSFET N-CH 80V 30A/224A 5DFN

onsemi

3218 3.64
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Ta), 224A (Tc) 4.5V, 10V 1.9mOhm @ 50A, 10V 2V @ 330µA 112 nC @ 10 V ±20V 6900 pF @ 40 V - 3.9W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NP100P06PLG-E1-AY

Таблицы данных

NP100P06PLG-E1-AY

NP100P06PLG-E1-AY

MOSFET P-CH 60V 100A TO263

Renesas Electronics America Inc

3948 2.99
- +

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Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 6mOhm @ 50A, 10V 2.5V @ 1mA 300 nC @ 10 V ±20V 15000 pF @ 10 V - 1.8W (Ta), 200W (Tc) 175°C (TJ) Surface Mount
IXTP1R6N100D2

Таблицы данных

IXTP1R6N100D2

IXTP1R6N100D2

MOSFET N-CH 1000V 1.6A TO220AB

IXYS

2087 3.00
- +

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Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 1.6A (Tc) 10V 10Ohm @ 800mA, 0V - 27 nC @ 5 V ±20V 645 pF @ 25 V Depletion Mode 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISC009N06LM5ATMA1

Таблицы данных

ISC009N06LM5ATMA1

ISC009N06LM5ATMA1

MOSFET N-CH 60V 41A/348A TSON-8

Infineon Technologies

2590 5.47
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 60 V 41A (Ta), 348A (Tc) 4.5V, 10V 0.9mOhm @ 50A, 10V 2.3V @ 147µA 209 nC @ 10 V ±20V 13000 pF @ 30 V - 3W (Ta), 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBF30PBF-BE3

Таблицы данных

IRFBF30PBF-BE3

IRFBF30PBF-BE3

MOSFET N-CH 900V 3.6A TO220AB

Vishay Siliconix

2688 3.01
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) - 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF7N90K5

Таблицы данных

STF7N90K5

STF7N90K5

MOSFET N-CH 900V 7A TO220FP

STMicroelectronics

3673 3.02
- +

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Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 900 V 7A (Tc) 10V - 5V @ 100µA - ±30V - - 25W -55°C ~ 150°C (TJ) Through Hole
TK2R4E08QM,S1X

Таблицы данных

TK2R4E08QM,S1X

TK2R4E08QM,S1X

UMOS10 TO-220AB 80V 2.4MOHM

Toshiba Semiconductor and Storage

2208 3.03
- +

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Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2.44mOhm @ 50A, 10V 3.5V @ 2.2mA 178 nC @ 10 V ±20V 13000 pF @ 40 V - 300W (Tc) 175°C Through Hole
FDBL9406-F085T6

Таблицы данных

FDBL9406-F085T6

FDBL9406-F085T6

MOSFET N-CH 40V 45A/240A 8HPSOF

onsemi

2299 6.04
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 45A (Ta), 240A (Tc) - 1.21mOhm @ 50A, 10V 3.5V @ 190µA 75 nC @ 10 V +20V, -16V 4960 pF @ 25 V - 4.3W (Ta), 136.4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHH080N60E-T1-GE3

Таблицы данных

SIHH080N60E-T1-GE3

SIHH080N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 8

Vishay Siliconix

2476 5.37
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® E Active N-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 80mOhm @ 17A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2557 pF @ 100 V - 184W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP17N80AEF-GE3

Таблицы данных

SIHP17N80AEF-GE3

SIHP17N80AEF-GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix

3483 3.05
- +

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Tube EF Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 305mOhm @ 8.5A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 1300 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTPF165N65S3H

Таблицы данных

NTPF165N65S3H

NTPF165N65S3H

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi

3989 3.05
- +

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Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4V @ 1.6mA 35 nC @ 10 V ±30V 1808 pF @ 400 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMTH10H1M7STLWQ-13

Таблицы данных

DMTH10H1M7STLWQ-13

DMTH10H1M7STLWQ-13

MOSFET BVDSS: 61V~100V POWERDI10

Diodes Incorporated

3494 5.78
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 250A (Tc) 10V 2mOhm @ 30A, 10V 4V @ 250µA 147 nC @ 10 V ±20V 9871 pF @ 50 V - 6W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS5C628NT1G NTMFS5C628NT1G

NTMFS5C628NT1G

MOSFET N-CH 60V 28A/150A 5DFN

onsemi

3506 3.76
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 150A (Tc) 10V 3mOhm @ 27A, 10V 4V @ 135µA 34 nC @ 10 V ±20V 2630 pF @ 30 V - 3.7W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFSL4310

Таблицы данных

AUIRFSL4310

AUIRFSL4310

AUTOMOTIVE POWER MOSFET

International Rectifier

3045 0.00
- +

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Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) - 7mOhm @ 75A, 10V 4V @ 250µA 250 nC @ 10 V - 7670 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTMFS0D9N03CGT1G

Таблицы данных

NTMFS0D9N03CGT1G

NTMFS0D9N03CGT1G

MOSFET N-CH 30V 48A/298A 5DFN

onsemi

2706 3.79
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 30 V 48A (Ta), 298A (Tc) 10V 0.9mOhm @ 20A, 10V 2.2V @ 200µA 131.4 nC @ 10 V ±20V 9450 pF @ 15 V - 3.8W (Ta), 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCP360N65S3R0

Таблицы данных

FCP360N65S3R0

FCP360N65S3R0

MOSFET N-CH 650V 10A TO220-3

onsemi

2396 1.00
- +

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Bulk,Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 360mOhm @ 5A, 10V 4.5V @ 1mA 18 nC @ 10 V ±30V 730 pF @ 400 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP2710_F085

Таблицы данных

FDP2710_F085

FDP2710_F085

4A, 250V, 0.047OHM, N-CHANNEL

Fairchild Semiconductor

3860 0.00
- +

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Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 250 V 4A (Ta), 50A (Tc) 10V 47mOhm @ 50A, 10V 5V @ 250µA 101 nC @ 10 V ±30V 5690 pF @ 25 V - 403W (Tc) -55°C ~ 150°C (TJ)
SIHK125N60E-T1-GE3

Таблицы данных

SIHK125N60E-T1-GE3

SIHK125N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix

2983 5.47
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® E Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 44 nC @ 10 V ±30V 1811 pF @ 100 V - 132W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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