Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQA24N50-ON

Таблицы данных

FQA24N50-ON

FQA24N50-ON

24A, 500V, 0.2OHM, N-CHANNEL, M

onsemi

3626 0.00
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Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 200mOhm @ 12A, 10V 5V @ 250µA 120 nC @ 10 V ±30V 4500 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB34N20TM-AM002

Таблицы данных

FQB34N20TM-AM002

FQB34N20TM-AM002

MOSFET N-CH 200V 31A D2PAK

onsemi

3154 2.35
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 200 V 31A (Tc) 10V 75mOhm @ 15.5A, 10V 5V @ 250µA 78 nC @ 10 V ±30V 3100 pF @ 25 V - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCP190N65F

Таблицы данных

FCP190N65F

FCP190N65F

MOSFET N-CH 650V 20.6A TO220-3

onsemi

2889 1.00
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Bulk,Tube FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 20.6A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 2mA 78 nC @ 10 V ±20V 3225 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG17N80AEF-GE3

Таблицы данных

SIHG17N80AEF-GE3

SIHG17N80AEF-GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix

2986 3.36
- +

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Tube EF Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 305mOhm @ 8.5A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 1300 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFS5C612NLT1G

Таблицы данных

NVMFS5C612NLT1G

NVMFS5C612NLT1G

MOSFET N-CH 60V 36A/235A 5DFN

onsemi

2262 4.27
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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 36A (Ta), 235A (Tc) 4.5V, 10V 1.5mOhm @ 50A, 10V 2V @ 250µA 91 nC @ 10 V ±20V 6660 pF @ 25 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MAX8536EUA

Таблицы данных

MAX8536EUA

MAX8536EUA

MAX8535 ORING MOSFET CONTROLLER

Analog Devices Inc./Maxim Integrated

2352 0.00
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Bulk * Active - - - - - - - - - - - - - -
IXTY2N100P

Таблицы данных

IXTY2N100P

IXTY2N100P

MOSFET N-CH 1000V 2A TO252

IXYS

2976 3.37
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Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 2A (Tc) 10V 7.5Ohm @ 500mA, 10V 4.5V @ 100µA 24.3 nC @ 10 V ±20V 655 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTMTSC4D3N15MC

Таблицы данных

NTMTSC4D3N15MC

NTMTSC4D3N15MC

SINGLE N-CHANNEL POWER MOSFET 15

onsemi

3823 6.77
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Dual Cool™ Active N-Channel MOSFET (Metal Oxide) 150 V 22A (Ta), 174A (Tc) 8V, 10V 4.45mOhm @ 95A, 10V 4.5V @ 521µA 79 nC @ 10 V ±20V 6514 pF @ 75 V - 5W (Ta), 293W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
SIHK105N60EF-T1GE3

Таблицы данных

SIHK105N60EF-T1GE3

SIHK105N60EF-T1GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix

3705 6.02
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® EF Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 105mOhm @ 10A, 10V 5V @ 250µA 51 nC @ 10 V ±30V 2301 pF @ 100 V - 142W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB330P10NMATMA1

Таблицы данных

IPB330P10NMATMA1

IPB330P10NMATMA1

TRENCH >=100V PG-TO263-3

Infineon Technologies

2187 6.25
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 6.9A (Ta), 62A (Tc) 10V 33mOhm @ 53A, 10V 4V @ 5.55mA 236 nC @ 10 V ±20V 11000 pF @ 50 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6511ENXC7G

Таблицы данных

R6511ENXC7G

R6511ENXC7G

650V 11A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

3465 3.45
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Ta) 10V 400mOhm @ 3.8A, 10V 4V @ 320µA 32 nC @ 10 V ±20V 670 pF @ 25 V - 53W (Tc) 150°C (TJ) Through Hole
IPB320P10LMATMA1

Таблицы данных

IPB320P10LMATMA1

IPB320P10LMATMA1

TRENCH >=100V PG-TO263-3

Infineon Technologies

2766 6.30
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Ta), 63A (Tc) 4.5V, 10V 32mOhm @ 54A, 10V 2V @ 5.55mA 219 nC @ 10 V ±20V 11000 pF @ 50 V - 3.8W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RJ1L12CGNTLL

Таблицы данных

RJ1L12CGNTLL

RJ1L12CGNTLL

NCH 60V 120A POWER MOSFET: RJ1L1

Rohm Semiconductor

3433 6.56
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Ta) 4.5V, 10V 3.4mOhm @ 50A, 10V 2.5V @ 200µA 139 nC @ 10 V ±20V 7100 pF @ 30 V - 166W (Ta) 150°C (TJ) Surface Mount
FDB9503L-F085

Таблицы данных

FDB9503L-F085

FDB9503L-F085

MOSFET P-CH 40V 110A D2PAK

onsemi

2869 3.47
- +

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Tape & Reel (TR) Automotive, AEC-Q101, PowerTrench® Active P-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 4.5V, 10V 2.6mOhm @ 80A, 10V 3V @ 250µA 255 nC @ 10 V ±16V 8320 pF @ 20 V - 333W (Tj) -55°C ~ 175°C (TJ) Surface Mount
IPL65R130CFD7AUMA1

Таблицы данных

IPL65R130CFD7AUMA1

IPL65R130CFD7AUMA1

COOLMOS CFD7 SUPERJUNCTION MOSFE

Infineon Technologies

2047 6.31
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 130mOhm @ 8.5A, 10V 4.5V @ 420µA 36 nC @ 10 V ±20V 1694 pF @ 400 V - 127W (Tc) -40°C ~ 150°C (TJ) Surface Mount
STD80N240K6

Таблицы данных

STD80N240K6

STD80N240K6

N-CHANNEL 800 V, 197 MOHM TYP.

STMicroelectronics

2023 27.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 800 V 16A (Tc) 10V 220mOhm @ 7A, 10V 4V @ 100µA 25.9 nC @ 10 V ±30V 1350 pF @ 400 V - 105W (Tc) -55°C ~ 150°C (TJ)
R6530KNX3C16

Таблицы данных

R6530KNX3C16

R6530KNX3C16

MOSFET N-CH 650V 30A TO220AB

Rohm Semiconductor

3626 3.52
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 140mOhm @ 14.5A, 10V 5V @ 960µA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 307W (Tc) 150°C (TJ) Through Hole
FDBL86062-F085

Таблицы данных

FDBL86062-F085

FDBL86062-F085

MOSFET N-CH 100V 300A 8HPSOF

ON Semiconductor

11160 7.02
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) 10V 2mOhm @ 80A, 10V 4.5V @ 250µA 124 nC @ 10 V ±20V 6970 pF @ 50 V - 429W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PJMP210N65EC_T0_00601 PJMP210N65EC_T0_00601

PJMP210N65EC_T0_00601

650V/ 390MOHM / 10A/ EASY TO DRI

Panjit International Inc.

3991 2.38
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 19A (Tc) 10V 210mOhm @ 9.5A, 10V 4V @ 250µA 34 nC @ 10 V ±30V 1412 pF @ 400 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJMF210N65EC_T0_00601 PJMF210N65EC_T0_00601

PJMF210N65EC_T0_00601

650V/ 390MOHM / 10A/ EASY TO DRI

Panjit International Inc.

3077 2.38
- +

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Расследования

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 210mOhm @ 9.5A, 10V 4V @ 250µA 34 nC @ 10 V ±30V 1412 pF @ 400 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
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