Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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![]() Таблицы данных |
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FDB3672-F085MOSFET N-CH 100V 7.2A/44A TO263 |
3992 | 1.57 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.2A (Ta), 44A (Tc) | 6V, 10V | 28mOhm @ 44A, 10V | 4V @ 250µA | 31 nC @ 10 V | ±20V | 1710 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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PJMB050N10NS2_R2_00601100V/ 5MOHM/ LOW FOM MOSFET |
3703 | 2.66 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() Таблицы данных |
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IRFI7536GPBF-IRHEXFET N-CHANNEL POWER MOSFET |
2540 | 1.58 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 86A (Tc) | 10V | 3.4mOhm @ 75A, 10V | 4V @ 150µA | 195 nC @ 10 V | ±20V | 6600 pF @ 48 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() Таблицы данных |
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NTD5C632NLT4GT6 60V LL DPAK |
3590 | 5.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 29A (Ta), 155A (Tc) | 4.5V, 10V | 2.5mOhm @ 50A, 10V | 2.1V @ 250µA | 34 nC @ 4.5 V | ±20V | 5700 pF @ 25 V | - | 4W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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ISC010N06NM5ATMA1OPTIMOS5 60 V POWER MOSFET IN SU |
2331 | 4.59 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 39A (Ta), 330A (Tc) | 6V, 10V | 1.05mOhm @ 50A, 10V | 3.3V @ 147µA | 143 nC @ 10 V | ±20V | 11000 pF @ 30 V | - | 3W (Ta), 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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PJF60R290E_T0_00001600V N-CHANNEL SUPER JUNCTION MO |
2883 | 2.54 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.7A (Ta), 15A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±20V | 1013 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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FQB45N15V2TMMOSFET N-CH 150V 45A D2PAK |
3425 | 0.00 |
ДобавитьРасследования |
Bulk | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 45A (Tc) | 10V | 40mOhm @ 22.5A, 10V | 4V @ 250µA | 94 nC @ 10 V | ±30V | 3030 pF @ 25 V | - | - | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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SIHH250N60EF-T1GE3EF SERIES POWER MOSFET WITH FAST |
3679 | 4.52 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | EF | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 250mOhm @ 5.5A, 10V | 5V @ 250µA | 23 nC @ 10 V | ±30V | 915 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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IRFS4127TRLPBFMOSFET N-CH 200V 72A D2PAK |
2474 | 4.10 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 72A (Tc) | 10V | 22mOhm @ 44A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±20V | 5380 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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STB140NF55T4MOSFET N-CH 55V 80A D2PAK |
2097 | 4.31 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | STripFET™ II | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | 4V @ 250µA | 142 nC @ 10 V | ±20V | 5300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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NTMT110N65S3HFPOWER MOSFET, N-CHANNEL, SUPERFE |
3061 | 5.15 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperFET® III, FRFET® | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 110mOhm @ 15A, 10V | 5V @ 740µA | 62 nC @ 10 V | ±30V | 2635 pF @ 400 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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DMTH10H2M5STLWQ-13MOSFET BVDSS: 61V~100V,POWERDI10 |
3013 | 4.90 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 215A (Tc) | 10V | 2.5mOhm @ 30A, 10V | 4V @ 250µA | 124.4 nC @ 10 V | ±20V | 8450 pF @ 50 V | - | 5.8W (Ta), 230.8W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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NVBLS1D7N08HMOSFET - POWER, SINGLE N-CHANNEL |
3883 | 5.16 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 33A (Ta), 241.3A (Tc) | 10V | 1.7mOhm @ 80A, 10V | 4V @ 479µA | 121 nC @ 10 V | ±20V | 7675 pF @ 40 V | - | 4.4W (Ta), 237.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
![]() Таблицы данных |
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SIHK185N60E-T1-GE3E SERIES POWER MOSFET POWERPAK 1 |
2404 | 4.59 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 19A (Tc) | 10V | 185mOhm @ 9.5A, 10V | 5V @ 250µA | 33 nC @ 10 V | ±30V | 1085 pF @ 100 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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FCMT099N65S3MOSFET N-CH 650V 30A POWER88 |
2374 | 5.19 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.5V @ 3mA | 56 nC @ 10 V | ±30V | 2270 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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FDP030N06B-F102MOSFET N-CH 60V 120A TO220-3 |
2222 | 2.61 |
ДобавитьРасследования |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.1mOhm @ 100A, 10V | 4V @ 250µA | 99 nC @ 10 V | ±20V | 8030 pF @ 30 V | - | 205W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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PJP60R290E_T0_00001600V N-CHANNEL SUPER JUNCTION MO |
3989 | 2.61 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.7A (Ta), 15A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±20V | 1013 pF @ 25 V | - | 184W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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IPA60R299CPXKN-CHANNEL POWER MOSFET |
3280 | 0.00 |
ДобавитьРасследования |
Bulk | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() Таблицы данных |
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SIRS700DP-T1-RE3N-CHANNEL 100 V (D-S) MOSFET POW |
2433 | 4.63 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 30A (Ta), 127A (Tc) | 7.5V, 10V | 3.5mOhm @ 20A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 5950 pF @ 50 V | - | 7.4W (Ta),132W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
![]() Таблицы данных |
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NP70N04MUG-S18-AYMOSFET N-CH 40V 70A TO220 |
2325 | 0.00 |
ДобавитьРасследования |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 70A (Tc) | - | 5mOhm @ 35A, 10V | 4V @ 250µA | 90 nC @ 10 V | - | 4900 pF @ 25 V | - | 1.8W (Ta), 115W (Tc) | 175°C (TJ) | Through Hole |