Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
;;3.jpg)
|
IRFU3410PBFMOSFET N-CH 100V 31A IPAK |
3669 | 1.19 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 31A (Tc) | 10V | 39mOhm @ 18A, 10V | 4V @ 250µA | 56 nC @ 10 V | ±20V | 1690 pF @ 25 V | - | 3W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
|
NP48N055MHE-S18-AYN-CHANNEL POWER MOSFET |
3960 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
IQE065N10NM5CGATMA1TRENCH >=100V PG-TTFN-9 |
2793 | 3.35 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Ta), 85A (Tc) | 6V, 10V | 6.5mOhm @ 20A, 10V | 3.8V @ 48µA | 42 nC @ 10 V | ±20V | 3000 pF @ 50 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
|
Таблицы данных |
|
IPB160N04S4H1ATMA1MOSFET N-CH 40V 160A TO263-7 |
2085 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 1.6mOhm @ 100A, 10V | 4V @ 110µA | 137 nC @ 10 V | ±20V | 10920 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
NTMFS002N10MCLT1GPTNG 100V LL SO8FL HE |
2045 | 3.50 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 22A (Ta), 175A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 3V @ 351µA | 97 nC @ 10 V | ±20V | 7200 pF @ 50 V | - | 3W (Ta), 189W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
STL125N8F7AGAUTOMOTIVE-GRADE N-CHANNEL 80 V |
3970 | 3.08 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 120A (Tc) | 10V | 4.5mOhm @ 60A, 10V | 4.5V @ 250µA | 76 nC @ 10 V | ±20V | 5570 pF @ 40 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
STP60NF06MOSFET N-CH 60V 60A TO220AB |
3717 | 1.85 |
ДобавитьРасследования |
Tube | STripFET™ II | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 16mOhm @ 30A, 10V | 4V @ 250µA | 73 nC @ 10 V | ±20V | 1660 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
|
NVMFS5C450NWFAFT1GMOSFET N-CH 40V 24A/102A 5DFN |
2674 | 2.45 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 24A (Ta), 102A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 3.5V @ 65µA | 23 nC @ 10 V | ±20V | 1600 pF @ 25 V | - | 3.6W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
R8006KND3TL1HIGH-SPEED SWITCHING NCH 800V 6A |
2220 | 3.63 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Ta) | 10V | 900mOhm @ 3A, 10V | 4.5V @ 4mA | 22 nC @ 10 V | ±20V | 650 pF @ 100 V | - | 83W (Tc) | 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
FDMC86340ET80MOSFET N-CH 80V 14A/68A POWER33 |
3076 | 2.36 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 14A (Ta), 68A (Tc) | 8V, 10V | 6.5mOhm @ 14A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±20V | 2775 pF @ 40 V | - | 2.8W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRF532N-CHANNEL POWER MOSFET |
2722 | 0.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 10V | 230mOhm @ 8.3A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 79W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
NTMFS4C55NT1GMOSFET N-CH 30V 78A SO8FL |
2381 | 1.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®,Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
SIHA18N60E-GE3N-CHANNEL 600V |
3737 | 3.32 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | E | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 18A (Tc) | 10V | 202mOhm @ 9A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±30V | 1640 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
SIHA25N50E-GE3N-CHANNEL 500V |
3544 | 3.35 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1980 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
N0412N-S19-AYMOSFET N-CH 40V 100A TO220 |
2510 | 1.90 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Ta) | 10V | 3.7mOhm @ 50A, 10V | - | 100 nC @ 10 V | ±20V | 5550 pF @ 25 V | - | 1.5W (Ta), 119W (Tc) | 150°C (TJ) | Through Hole |
|
Таблицы данных |
|
FCB199N65S3MOSFET N-CH 650V 14A D2PAK |
3919 | 3.21 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | SuperFET® III | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 14A (Tc) | 10V | 199mOhm @ 7A, 10V | 4.5V @ 1.4mA | 30 nC @ 10 V | ±30V | 1225 pF @ 400 V | - | 98W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
Таблицы данных |
|
IRF433N-CHANNEL POWER MOSFET |
2063 | 0.00 |
ДобавитьРасследования |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 4A | - | - | - | - | - | - | - | 75W | - | Through Hole |
|
Таблицы данных |
|
IPB048N06LGN-CHANNEL POWER MOSFET |
2560 | 0.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
Таблицы данных |
|
IRF3205ZLPBFMOSFET N-CH 55V 75A TO262 |
2612 | 1.93 |
ДобавитьРасследования |
Tube | HEXFET® | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
Таблицы данных |
|
NTTFS5C466NLTAGMOSFET N-CH 14A/51A 8WDFN |
3377 | 2.54 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | - | - | 14A (Ta), 51A (Tc) | - | 7.3mOhm @ 10A, 10V | 2.2V @ 250µA | - | - | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount |
Запрос котировок
