Таблицы данных Фотографии Производитель. Часть # Акции Цены А Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IQE050N08NM5CGATMA1

Таблицы данных

IQE050N08NM5CGATMA1

IQE050N08NM5CGATMA1

TRENCH 40<-<100V PG-TTFN-9

Infineon Technologies

3981 3.19
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 16A (Ta), 101A (Tc) 6V, 10V 5mOhm @ 20A, 10V 3.8V @ 49µA 43.2 nC @ 10 V ±20V 2900 pF @ 40 V - 2.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
SIDR668DP-T1-RE3

Таблицы данных

SIDR668DP-T1-RE3

SIDR668DP-T1-RE3

N-CHANNEL 100-V (D-S) MOSFET

Vishay Siliconix

2283 3.11
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 23.2A (Ta), 95A (Tc) 7.5V, 10V 4.8mOhm @ 20A, 10V 3.4V @ 250µA 108 nC @ 10 V ±20V 5400 pF @ 50 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJP60R620E_T0_00001 PJP60R620E_T0_00001

PJP60R620E_T0_00001

600V N-CHANNEL SUPER JUNCTION MO

Panjit International Inc.

3475 1.76
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 1.2A (Ta), 7A (Tc) 10V 620mOhm @ 2.4A, 10V 4V @ 250µA 21 nC @ 10 V ±20V 457 pF @ 25 V - 2W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
STL260N4LF7

Таблицы данных

STL260N4LF7

STL260N4LF7

N-CHANNEL 40 V, 0.00085 OHM TYP.

STMicroelectronics

2525 2.96
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.1mOhm @ 25A, 10V 2.5V @ 250µA 42 nC @ 4.5 V ±20V 6000 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTD5C668NLT4G

Таблицы данных

NTD5C668NLT4G

NTD5C668NLT4G

MOSFET N-CH 60V 15A/48A DPAK

onsemi

2201 2.53
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel - - 15A (Ta), 48A (Tc) - 8.9mOhm @ 25A, 10V 2.1V @ 250µA - - - - - -55°C ~ 175°C (TJ) Surface Mount
2SK4145-S19-AY

Таблицы данных

2SK4145-S19-AY

2SK4145-S19-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc

3430 0.00
- +

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Bulk * Active - - - - - - - - - - - - - -
IPB60R299CP

Таблицы данных

IPB60R299CP

IPB60R299CP

N-CHANNEL POWER MOSFET

Infineon Technologies

2546 0.00
- +

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Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -40°C ~ 150°C (TJ) Surface Mount
RS6R060BHTB1

Таблицы данных

RS6R060BHTB1

RS6R060BHTB1

NCH 150V 60A, HSOP8, POWER MOSFE

Rohm Semiconductor

2439 3.48
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® - Active N-Channel MOSFET (Metal Oxide) 150 V 60A (Ta) 6V, 10V 21.8mOhm @ 60A, 10V 4V @ 1mA 46 nC @ 10 V ±20V 2750 pF @ 75 V - 104W (Tc) 150°C (TJ) Surface Mount
SIDR570EP-T1-RE3

Таблицы данных

SIDR570EP-T1-RE3

SIDR570EP-T1-RE3

N-CHANNEL 150 V (D-S) 175C MOSFE

Vishay Siliconix

2560 3.17
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 150 V 30.8A (Ta), 90.9A (Tc) 7.5V, 10V 7.9mOhm @ 20A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 3740 pF @ 75 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP80R1K2P7XKSA1

Таблицы данных

IPP80R1K2P7XKSA1

IPP80R1K2P7XKSA1

MOSFET N-CH 800V 4.5A TO220-3

Infineon Technologies

2011 1.80
- +

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Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A (Tc) 10V 1.2Ohm @ 1.7A, 10V 3.5V @ 80µA 11 nC @ 10 V ±20V 300 pF @ 500 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIDR104AEP-T1-RE3

Таблицы данных

SIDR104AEP-T1-RE3

SIDR104AEP-T1-RE3

N-CHANNEL 100 V (D-S) 175C MOSFE

Vishay Siliconix

3480 3.19
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 21.1A (Ta), 90.5A (Tc) 7.5V, 10V 6.1mOhm @ 15A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 3250 pF @ 50 V - 6.5W (Ta), 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NVMFS5C420NT1G

Таблицы данных

NVMFS5C420NT1G

NVMFS5C420NT1G

POWER MOSFET, N-CHANNEL, SO8FL

onsemi

3720 0.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 43A (Ta), 268A (Tc) 10V 1.1mOhm @ 50A, 10V 4V @ 200µA 82 nC @ 10 V ±20V 5340 pF @ 20 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C420NLT1G

Таблицы данных

NVMFS5C420NLT1G

NVMFS5C420NLT1G

POWER MOSFET, SINGLE, N-CHANNEL

onsemi

2161 0.00
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 45A (Ta), 277A (Tc) 4.5V, 10V 1mOhm @ 50A, 10V 2.2V @ 200µA 100 nC @ 10 V ±20V 7020 pF @ 20 V - 3.8W (Ta), 146W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C442NLWFAFT1G

Таблицы данных

NVMFS5C442NLWFAFT1G

NVMFS5C442NLWFAFT1G

MOSFET N-CH 40V 29A/130A 5DFN

onsemi

3646 2.39
- +

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Tape & Reel (TR),Cut Tape (CT),Digi-Reel® Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 29A (Ta), 130A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V 2V @ 250µA 50 nC @ 10 V ±20V 3100 pF @ 25 V - 3.7W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STP52P3LLH6 STP52P3LLH6

STP52P3LLH6

MOSFET P-CHANNEL 30V 52A TO220

STMicroelectronics

3748 1.81
- +

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Tube STripFET™ H6 Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 52A (Tc) 4.5V, 10V - - - - - - 70W (Tc) - Through Hole
IRF644PBF-BE3

Таблицы данных

IRF644PBF-BE3

IRF644PBF-BE3

MOSFET N-CH 250V 14A TO220AB

Vishay Siliconix

3800 1.81
- +

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Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) - 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS8662

Таблицы данных

FDMS8662

FDMS8662

MOSFET N-CH 30V 28A/49A 8PQFN

Fairchild Semiconductor

3757 0.00
- +

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Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 49A (Tc) 4.5V, 10V 2mOhm @ 28A, 10V 3V @ 250µA 100 nC @ 10 V ±20V 6420 pF @ 15 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUFA75645P3

Таблицы данных

HUFA75645P3

HUFA75645P3

MOSFET N-CH 100V 75A TO220-3

Fairchild Semiconductor

3386 0.00
- +

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Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 75A, 10V 4V @ 250µA 238 nC @ 20 V ±20V 3790 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQB7N80TM

Таблицы данных

FQB7N80TM

FQB7N80TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3657 0.00
- +

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Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 6.6A (Tc) 10V 1.5Ohm @ 3.3A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1850 pF @ 25 V - 3.13W (Ta), 167W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJMQC040N10NS2_R2_00601 PJMQC040N10NS2_R2_00601

PJMQC040N10NS2_R2_00601

100V/ 4.4MOHM/ EXCELLECT LOW FOM

Panjit International Inc.

2128 2.56
- +

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Расследования

Tape & Reel (TR),Cut Tape (CT),Digi-Reel® * Active - - - - - - - - - - - - - -
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