Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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BSC010NE2LSIATMA1MOSFET N-CH 25V 38A/100A TDSON |
3795 | 2.41 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 38A (Ta), 100A (Tc) | 4.5V, 10V | 1.05mOhm @ 30A, 10V | 2V @ 250µA | 59 nC @ 10 V | ±20V | 4200 pF @ 12 V | - | 2.5W (Ta), 96W (Tc) | - | Surface Mount |
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IRLL024NPBFMOSFET N-CH 55V 3.1A SOT223 |
3145 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 3.1A (Ta) | - | 65mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6 nC @ 5 V | ±16V | 510 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRFR9120NPBFMOSFET P-CH 100V 6.6A TO252 |
2337 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6.6A (Tc) | - | 480mOhm @ 3.9A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFS4010TRRPBFHEXFET POWER MOSFET |
2253 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 10V | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215 nC @ 10 V | ±20V | 9575 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIR578DP-T1-RE3N-CHANNEL 150 V (D-S) MOSFET POW |
2252 | 2.35 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 17.2A (Ta), 70.2A (Tc) | 7.5V, 10V | 8.8mOhm @ 20A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 2540 pF @ 75 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLR8726PBFMOSFET N-CH 30V 86A DPAK |
2503 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 86A (Tc) | - | 5.8mOhm @ 25A, 10V | 2.35V @ 50µA | 23 nC @ 4.5 V | ±20V | 2150 pF @ 15 V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLR8729PBFMOSFET N-CH 30V 58A DPAK |
3757 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 58A (Tc) | - | 8.9mOhm @ 25A, 10V | 2.35V @ 25µA | 16 nC @ 4.5 V | ±20V | 1350 pF @ 15 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFPS3815PBFPFET, 105A I(D), 150V, 0.015OHM |
3275 | 0.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 105A (Tc) | 10V | 15mOhm @ 63A, 10V | 5V @ 250µA | 390 nC @ 10 V | ±30V | 6810 pF @ 25 V | - | 441W (Tc) | -55°C ~ 175°C (TJ) | |
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Таблицы данных |
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NTMFS022N15MCPOWER MOSFET, 150V SINGLE N CHAN |
3105 | 2.63 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 7.3A (Ta), 41.9A (Tc) | 8V, 10V | 22mOhm @ 18A, 10V | 4.5V @ 100µA | 17 nC @ 10 V | ±20V | 1315 pF @ 75 V | - | 2.5W (Ta), 80.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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STD155N3LH6MOSFET N-CH 30V 80A DPAK |
3698 | 1.20 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | DeepGATE™, STripFET™ VI | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 5V, 10V | 3mOhm @ 40A, 10V | 2.5V @ 250µA | 80 nC @ 5 V | ±20V | 3800 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR18N15DPBFMOSFET N-CH 150V 18A DPAK |
3178 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 18A (Tc) | - | 125mOhm @ 11A, 10V | 5.5V @ 250µA | 43 nC @ 10 V | ±30V | 900 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRFR5305PBFAUTOMOTIVE HEXFET P-CHANNEL |
2796 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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SIDR638DP-T1-RE3N-CHANNEL 40-V (D-S) MOSFET |
2443 | 2.38 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 64.6A (Ta), 100A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 2.3V @ 250µA | 204 nC @ 10 V | +20V, -16V | 10500 pF @ 20 V | - | 6.25W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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NTTFS1D8N02P1EMOSFET N-CH 25V 20A/152A 8PQFN |
3830 | 2.64 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 20A (Ta), 152A (Tc) | 4.5V, 10V | 1.3mOhm @ 30A, 10V | 2V @ 700µA | 38 nC @ 10 V | +16V, -12V | 3159 pF @ 13 V | - | 800mW (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRFS77347PPBFMOSFET N-CH 75V 197A D2PAK |
3818 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 197A (Tc) | - | 3.05mOhm @ 100A, 10V | 3.7V @ 250µA | 270 nC @ 10 V | ±20V | 10130 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFU1205PBFHEXFET N-CHANNEL POWER MOSFET |
3602 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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IRFU3607TRL701PHEXFET POWER MOSFET |
2553 | 1.00 |
ДобавитьРасследования |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 56A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84 nC @ 10 V | ±20V | 3070 pF @ 50 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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BUK7508-55A,127MOSFET N-CH 55V 75A TO220AB |
3963 | 1.00 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Ta) | - | 8mOhm @ 25A, 10V | 4V @ 1mA | 76 nC @ 0 V | ±20V | 4352 pF @ 25 V | - | 254W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
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RM30N250DFMOSFET N-CHANNEL 250V 29A 8DFN |
2153 | 1.21 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 29A (Tc) | 10V | 64mOhm @ 10A, 10V | 4V @ 250µA | - | ±20V | 1584 pF @ 100 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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FDMS9408-F085N-CHANNEL MOSFET |
2879 | 1.00 |
ДобавитьРасследования |
Bulk | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 1.8mOhm @ 80A, 10V | 4V @ 250µA | 92 nC @ 10 V | ±20V | 5120 pF @ 25 V | - | 214W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
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