Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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IRF7413ZPBFMOSFET N-CH 30V 13A 8SO |
2036 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | - | 10mOhm @ 13A, 10V | 2.25V @ 250µA | 14 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF7476TRPBFHEXFET POWER MOSFET |
2780 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 15A (Ta) | 2.8V, 4.5V | 8mOhm @ 15A, 4.5V | 1.9V @ 250µA | 40 nC @ 4.5 V | ±12V | 2550 pF @ 6 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR210PBF-BE3MOSFET N-CH 200V 2.6A DPAK |
3794 | 1.23 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.6A (Tc) | - | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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RJK0455DPB-00#J5MOSFET N-CH 40V 45A LFPAK |
2629 | 1.24 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 45A (Ta) | 10V | 3.8mOhm @ 22.5A, 10V | - | 34 nC @ 10 V | ±20V | 2550 pF @ 10 V | - | 60W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRLR9343PBFDIGITAL AUDIO MOSFET |
3762 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | 4.5V, 10V | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47 nC @ 10 V | ±20V | 660 pF @ 50 V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount |
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CPH3324-TL-EP-CHANNEL SILICON MOSFET |
2924 | 1.00 |
ДобавитьРасследования |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.2A (Ta) | - | 530mOhm @ 600mA, 10V | - | 6.4 nC @ 10 V | - | 265 pF @ 20 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR24N15DPBFHEXFET N-CHANNEL POWER MOSFET |
3333 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 24A (Tc) | 10V | 95mOhm @ 14A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 890 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFR7740PBFMOSFET N-CH 75V 87A DPAK |
3892 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 87A (Tc) | - | 7.2mOhm @ 52A, 10V | 3.7V @ 100µA | 126 nC @ 10 V | ±20V | 4430 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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BUK9107-55ATE,118NOW NEXPERIA BUK9107-55ATE - |
3462 | 1.00 |
ДобавитьРасследования |
Bulk | TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 4.5V, 10V | 6.2mOhm @ 50A, 10V | 2V @ 1mA | 108 nC @ 5 V | ±15V | 5836 pF @ 25 V | Temperature Sensing Diode | 272W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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NVTFS4C02NTAGMOSFET - SINGLE N-CHANNEL POWER |
3633 | 0.00 |
ДобавитьРасследования |
Tape & Reel (TR),Cut Tape (CT),Digi-Reel® | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28.3A (Ta), 162A (Tc) | 4.5V, 10V | 2.25mOhm @ 20A, 10V | 2.2V @ 250µA | 20 nC @ 4.5 V | ±20V | 2980 pF @ 15 V | - | 3.2W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | |
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IRF1310NSPBFHEXFET POWER MOSFET |
3781 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 10V | 36mOhm @ 22A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 3.8W (Ta), 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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MCP90N06Y-BPN-CHANNEL MOSFET,TO-220AB(H) |
2005 | 1.16 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A | 4.5V, 10V | 7.5mOhm @ 20A, 10V | 2.5V @ 250µA | 34 nC @ 10 V | ±20V | 2000 pF @ 35 V | - | 83W | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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IRF2807ZSPBFMOSFET N-CH 75V 75A TO263-3-2 |
2683 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | - | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3270 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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FDN3401FDN3401 |
3397 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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JDX7004NFET T0220FP JPN |
2939 | 1.00 |
ДобавитьРасследования |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF2804S-7PPBFHEXFET POWER MOSFET |
2505 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 6930 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF3808SPBFHEXFET POWER MOSFET |
3705 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 106A (Tc) | 10V | 7mOhm @ 82A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±20V | 5310 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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RJK0652DPB-00#J5MOSFET N-CH 60V 35A LFPAK |
3013 | 1.17 |
ДобавитьРасследования |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 35A (Ta) | 4.5V, 10V | 7mOhm @ 17.5A, 10V | - | 29 nC @ 4.5 V | ±20V | 4100 pF @ 10 V | - | 55W (Tc) | 150°C (TJ) | Surface Mount |
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Таблицы данных |
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IRF640NSPBFMOSFET N-CH 200V 18A D2PAK |
3947 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | - | 150mOhm @ 11A, 10V | 4V @ 250µA | 67 nC @ 10 V | ±20V | 1160 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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Таблицы данных |
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IRFZ34NSPBFMOSFET N-CH 55V 29A D2PAK |
2698 | 1.00 |
ДобавитьРасследования |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 29A (Tc) | - | 40mOhm @ 16A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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