Грузовой вагон ( )| Таблицы данных | Фотографии | Производитель. Часть # | Акции | Цены | А | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Таблицы данных |
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SCTW35N65G2VAGSICFET N-CH 650V 45A HIP247 |
2641 | 20.40 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 45A (Tc) | 18V, 20V | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 240W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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Таблицы данных |
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IXFK94N50P2MOSFET N-CH 500V 94A TO264AA |
3652 | 20.89 |
ДобавитьРасследования |
Tube | HiPerFET™, PolarP2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 94A (Tc) | 10V | 55mOhm @ 500mA, 10V | 5V @ 8mA | 220 nC @ 10 V | ±30V | 13700 pF @ 25 V | - | 1300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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APT12060LVRGMOSFET N-CH 1200V 20A TO264 |
2744 | 21.15 |
ДобавитьРасследования |
Tube | POWER MOS V® | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 20A (Tc) | 10V | 600mOhm @ 10A, 10V | 4V @ 2.5mA | 650 nC @ 10 V | ±30V | 9500 pF @ 25 V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCT2160KEGC111200V, 22A, THD, SILICON-CARBIDE |
3799 | 21.54 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 18V | 208mOhm @ 7A, 18V | 4V @ 2.5mA | 62 nC @ 18 V | +22V, -6V | 1200 pF @ 800 V | - | 165W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXFT44N50PMOSFET N-CH 500V 44A TO268 |
2762 | 12.18 |
ДобавитьРасследования |
Tube | HiPerFET™, Polar | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 44A (Tc) | 10V | 140mOhm @ 22A, 10V | 5V @ 4mA | 98 nC @ 10 V | ±30V | 5440 pF @ 25 V | - | 658W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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Таблицы данных |
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SCT2160KEHRC111200V, 22A, THD, SILICON-CARBIDE |
2415 | 22.76 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 22A (Tc) | 18V | 208mOhm @ 7A, 18V | 4V @ 2.5mA | 62 nC @ 18 V | +22V, -6V | 1200 pF @ 800 V | - | 165W (Tc) | 175°C (TJ) | Through Hole |
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Таблицы данных |
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SCTW40N120G2VAGSICFET N-CH 1200V 33A HIP247 |
3786 | 23.12 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 33A (Tc) | 18V | 105mOhm @ 20A, 18V | 5V @ 1mA | 63 nC @ 18 V | +22V, -10V | 1230 pF @ 800 V | - | 290W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4026DRC15750V, 26M, 4-PIN THD, TRENCH-STR |
3686 | 23.15 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4026DEC11750V, 26M, 3-PIN THD, TRENCH-STR |
3070 | 23.15 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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NVH4L040N120SC1SICFET N-CH 1200V 58A TO247-4 |
2294 | 23.36 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 58A (Tc) | 20V | 56mOhm @ 35A, 20V | 4.3V @ 10mA | 106 nC @ 20 V | +25V, -15V | 1762 pF @ 800 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4036KEC111200V, 36M, 3-PIN THD, TRENCH-ST |
2262 | 23.52 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 43A (Tc) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 176W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4036KRC151200V, 36M, 4-PIN THD, TRENCH-ST |
2425 | 23.52 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 43A (Tc) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 176W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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APT10078BLLGMOSFET N-CH 1000V 14A TO247 |
3340 | 23.63 |
ДобавитьРасследования |
Tube | POWER MOS 7® | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 14A (Tc) | 10V | 780mOhm @ 7A, 10V | 5V @ 1mA | 95 nC @ 10 V | ±30V | 2525 pF @ 25 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4026DEHRC11750V, 56A, 3-PIN THD, TRENCH-STR |
3425 | 23.84 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4026DRHRC15750V, 56A, 4-PIN THD, TRENCH-STR |
3103 | 23.84 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 750 V | 56A (Tc) | 18V | 34mOhm @ 29A, 18V | 4.8V @ 15.4mA | 94 nC @ 18 V | +21V, -4V | 2320 pF @ 500 V | - | 176W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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IPW65R075CFD7AXKSA1MOSFET N-CH 650V 32A TO247-3-41 |
3241 | 12.66 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101, CoolMOS™ CFD7A | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 75mOhm @ 16.4A, 10V | 4.5V @ 820µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4036KEHRC111200V, 43A, 3-PIN THD, TRENCH-ST |
2897 | 24.23 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 43A (Tc) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 176W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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SCT4036KRHRC151200V, 43A, 4-PIN THD, TRENCH-ST |
2760 | 24.23 |
ДобавитьРасследования |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 43A (Tc) | 18V | 47mOhm @ 21A, 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | +21V, -4V | 2335 pF @ 800 V | - | 176W | 175°C (TJ) | Through Hole |
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Таблицы данных |
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IXKR25N80CMOSFET N-CH 800V 25A ISOPLUS247 |
3110 | 25.64 |
ДобавитьРасследования |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 25A (Tc) | 10V | 150mOhm @ 18A, 10V | 4V @ 2mA | 355 nC @ 10 V | ±20V | - | Super Junction | - | -40°C ~ 150°C (TJ) | Through Hole |
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Таблицы данных |
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SCT30N120SICFET N-CH 1200V 40A HIP247 |
3269 | 25.69 |
ДобавитьРасследования |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 20V | 100mOhm @ 20A, 20V | 2.6V @ 1mA (Typ) | 105 nC @ 20 V | +25V, -10V | 1700 pF @ 400 V | - | 270W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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